The development of highly stable and efficient wide-bandgap (WBG) perovskite solar cells (PSCs) based on bromine-iodine (Br–I) mixed-halide perovskite (with Br greater than 20%) is critical to create tandem solar cells. However, issues with Br–I phase segregation under solar cell operational conditions (such as light and heat) limit the device voltage and operational stability. This challenge is often exacerbated by the ready defect formation associated with the rapid crystallization of Br-rich perovskite chemistry with antisolvent processes. We combined the rapid Br crystallization with a gentle gas-quench method to prepare highly textured columnar 1.75–electron volt Br–I mixed WBG perovskite films with reduced defect density. With this approach, we obtained 1.75–electron volt WBG PSCs with greater than 20% power conversion efficiency, approximately 1.33-volt open-circuit voltage ( V _oc ), and excellent operational stability (less than 5% degradation over 1100 hours of operation under 1.2 sun at 65°C). When further integrated with 1.25–electron volt narrow-bandgap PSC, we obtained a 27.1% efficient, all-perovskite, two-terminal tandem device with a high V _oc of 2.2 volts.

Recombination is critically limiting in CdTe devices such as solar cells and detectors, with much of it occurring at or near the surface. In this work, we explore different routes to passivate p-type CdTe surfaces without any intentional extrinsic passivation layers. To provide deeper insight into the passivation routes, we uniquely correlate a set of characterization methods: surface analysis and time-resolved spectroscopy. We study two model systems: nominally undoped single crystals and large-grain polycrystalline films. We examine several strategies to reduce surface recombination velocity. First, we study the effects of removing surface contaminants while maintaining a near-stoichiometric surface. Then we examine stoichiometric thermally reconstructed surfaces. We also investigate the effects of shifting the surface stoichiometry by both “subtractive” (wet chemical etches) and “additive” (ampoule anneals and epitaxial growth) means. We consistently find for a variety of methods that a highly ordered stoichiometric to Cd-rich surface shows a significant reduction in surface recombination, whereas a Te-rich surface has high recombination and propose a mechanism to explain this. While as-received single crystals and as-deposited polycrystalline films have surface recombination velocities in the range of 10⁵–10⁶cm/s, we find that several routes can reduce surface recombination velocities to <2.5 × 10⁴cm/s.

We report gallium arsenide (GaAs) growth rates exceeding 300 µm h⁻¹ using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demonstrate gallium indium phosphide growth at rates exceeding 200 µm h⁻¹ using similar growth conditions. We grew GaAs solar cell devices by incorporating the high growth rate of GaAs and evaluated its material quality at these high rates. Solar cell growth rates ranged from 35 to 309 µm h⁻¹ with open circuit voltages ranging from 1.04 to 1.07 V. The best devices exceeded 25% efficiency under the AM1.5 G solar spectrum. The high open-circuit voltages indicate that high material quality can be maintained at these extremely high growth rates. These results have strong implications toward lowering the deposition cost of III-V materials potentially enabling the deposition of high efficiency devices in mere seconds.

Glass/glass (G/G) photovoltaic (PV) module construction is quickly rising in popularity due to increased demand for bifacial PV modules, with additional applications for thin-film and building-integrated PV technologies. G/G modules are expected to withstand harsh environmental conditions and extend the installed module lifespan to greater than 30 years compared to conventional glass/backsheet (G/B) modules. With the rapid growth of G/G deployment, understanding the outdoor performance, degradation, and reliability of this PV module construction becomes highly valuable. In this review, we present the history of G/G modules that have existed in the field for the past 20 years, their subsequent reliability issues under different climates, and methods for accelerated testing and characterization of both cells and packaging materials. We highlight some general trends of G/G modules, such as greater degradation when using poly(ethylene-co-vinyl acetate) encapsulants, causing the industry to move toward polyolefin-based encapsulants. Transparent backsheets have also been introduced as an alternative to the rear glass for decreasing the module weight and aiding the effusion of trapped gaseous degradation products in the laminate. New amendments to IEC 61215 standard protocols for G/G bifacial modules have also been proposed so that the rear side power generation and UV exposure will be standardized. We further summarize a suite of destructive and non-destructive characterization techniques, such as current–voltage scans, module electro-optical imaging, adhesion tests, nanoscale structural/chemical investigation, and forensic analysis, to provide deeper insights into the fundamental properties of the module materials degradation and how it can be monitored in the G/G construction. This will set the groundwork for future research and product development.

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear V$_{\rm {oc}}$ loss rather than more typical changes in I$_{\rm {sc}}$ or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I–V measurement, Suns-V$_{\rm {oc}}$, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells .

For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl₂ treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 10¹⁶cm⁻³, which is an order of magnitude higher than standard CdCl₂-treated devices, without compromising the lifetime.