Emre Gurpinar

Dr. Emre Gurpinar

orcid

Research Focus & Metrics

Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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8 January 2021 in Proceedings of the IEEE
Verified
Journal Article
Closed access
IHIqbal Husain
Iqbal Husain
BOBurak Ozpineci
Burak Ozpineci
SISariful Islam
Sariful Islam
EGEmre Gurpinar
Emre Gurpinar
GSGui-Jia Su
Gui-Jia Su
RSRaj Sahu
Raj Sahu
The transition to electric road transport technologies requires electric traction drive systems to offer improved performances and capabilities, such as fuel efficiency (in terms of MPGe, i.e., miles per gallon of gasoline-equivalent), extended range, and fast-charging options. The enhanced electrification and transformed mobility are translating to a demand for higher power and more efficient electric traction drive systems that lead to better fuel economy for a given battery charge. To accelerate the mass-market adoption of electrified transportation, the U.S. Department of Energy (DOE), in collaboration with the automotive industry, has announced the technical targets for light-duty electric vehicles (EVs) for 2025. This article discusses the electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance. The emerging materials and technologies for power electronics and electric motors are presented, identifying the challenges and opportunities for even more aggressive designs to meet the need for next-generation EVs. Some innovative drive and motor designs with the potential to meet the DOE 2025 targets are also discussed.

7 December 2015 in IEEE Transactions on Power Electronics
Verified
Journal Article
Closed access
EGEmre Gurpinar
Emre Gurpinar
Alberto CastellazziAlberto Castellazzi
Alberto Castellazzi
In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power switches at 600-V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume, and dead-time effect for each technology is evaluated. Gate driver study shows that GaN has the lowest gate driver losses above 100 kHz and below 100 kHz, SiC has lowest gate losses. GaN has the best switching performance among three technologies that allows high efficiency at high-frequency applications. GaN-based inverter operated at 160-kHz switching frequency with 97.3% efficiency at 2.5-kW output power. Performance of three device technologies at different temperature, switching frequency, and load conditions shows that heat sink volume of the converter can be reduced by 2.5 times by switching from Si to GaN solution at 60 °C case temperature, and for SiC and GaN, heat sink volume can be reduced by 2.36 and 4.92 times, respectively, by increasing heat sink temperature to 100 °C. Output filter volume can be reduced by 43% with 24, 26, and 61 W increase in device power loss for GaN-, SiC-, and Si-based converters, respectively. WBG devices allow reduction of harmonic distortion at output current from 3.5% to 1.5% at 100 kHz.

4 January 2016 in IEEE Transactions on Industry Applications
Verified
Journal Article
Closed access
DBDavide Barater
Davide Barater
Carlo ConcariCarlo Concari
Carlo Concari
Giampaolo ButicchiGiampaolo Buticchi
Giampaolo Buticchi
EGEmre Gurpinar
Emre Gurpinar
DDDipankar De
Dipankar De
Alberto CastellazziAlberto Castellazzi
Alberto Castellazzi
Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable energy for several years. In recent years, the bulk of the research on PV has focused on transformerless grid-connected inverters, more efficient than traditional line transformer-based ones, but more critical from a power quality point of view, especially in terms of ground leakage current. Neutral-point-clamped (NPC) inverters have recently gained interest due to their intrinsically low ground leakage current and high efficiency, especially for MOSFET-based topologies. This paper presents an active NPC (ANPC) topology equipped with 650-V silicon carbide (SiC) MOSFETs, with a new modulation strategy that allows to reap the benefits of the wide-bandgap devices. An efficiency improvement is obtained due to the parallel operation of two devices during the freewheeling intervals. Simulations and experimental results confirm the effectiveness of the proposed converter.

25 April 2017 in IEEE Transactions on Power Electronics
Verified
Journal Article
Closed access
JLJianfeng Li
Jianfeng Li
Alberto CastellazziAlberto Castellazzi
Alberto Castellazzi
MEMohd Amir Eleffendi
Mohd Amir Eleffendi
EGEmre Gurpinar
Emre Gurpinar
CJChristopher Mark Johnson
Christopher Mark Johnson
LMLiam Mills
Liam Mills
This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation. The finite-element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical resistor-capacitor (RC) network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the six MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the six MOSFETs under switching frequencies from 5 to 100 kHz which demonstrate the good electrothermal performance of the designed power module.

23 November 2017 in IEEE Transactions on Industry Applications
Verified
Journal Article
Closed access
EGEmre Gurpinar
Emre Gurpinar
FRANCESCO IANNUZZOFRANCESCO IANNUZZO
FRANCESCO IANNUZZO
Yongheng YangYongheng Yang
Yongheng Yang
Alberto CastellazziAlberto Castellazzi
Alberto Castellazzi
Frede BlaabjergFrede Blaabjerg
Frede Blaabjerg
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V Gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common-mode behaviors based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

10 January 2022 in IEEE Transactions on Transportation Electrification
Verified
Journal Article
Open access
SCShajjad Chowdhury
Shajjad Chowdhury
EGEmre Gurpinar
Emre Gurpinar
BOBurak Ozpineci
Burak Ozpineci
DC-bus capacitors take up substantial space in an electric vehicle (EV) traction inverter, limiting the traction drive’s volumetric power density. Film capacitors are typically used, but other capacitor technologies with higher energy densities can help reduce the overall size. In this article, several commercial capacitor technologies are considered for use as dc-bus capacitors for EV traction inverters. They are characterized, evaluated, and compared for optimized design for volume reduction. This article also proposes a novel capacitor packaging technique that utilizes symmetrically distant parallel capacitor branches from termination, which improves electrical and thermal performance compared to a traditional flat-printed circuit board-based design. The proposed design was prototyped for a 100-kW traction inverter, and then, the thermal and electrical characteristics were evaluated under various operating conditions. Results show that the proposed symmetrical design has 40% lower layout inductance and 80% lower temperature difference than a traditional package among the parallel capacitor branches.