In this article, an inverted T-shaped tunnel field-effect transistor (TFET) with a dual metal gate (DMG) as a label-free biosensor has been proposed and analyzed using 3-D technology computer aided design (TCAD) simulations. The article compares the traditional inverted T-type TFET and the inverted T-type TFET with the DMG structure when used as a sensor. We focused on analyzing the electrical characteristics and sensitivity of the DMG structure and the single metal gate (SMG) structure as biosensors. The results show that the inverted T-shaped TFET biosensor with the DMG structure has better sensitivity and electrical characteristics. Compared with the SMG (work function = 4.3 eV), the DMG has a better ON-state current; compared with the SMG (work function = 3.8 eV), the DMG has a better subthreshold swing and sensitivity. In addition, the article also analyzed the influence of factors such as filling degree and temperature on the biosensor. The results show that the higher the filling level, the greater the ON-state current of the sensor. The higher the temperature, the greater the OFF-state current and the lower the sensitivity of the current switching ratio. Finally, a status map is presented, which maps the sensitivities of some important jobs in biosensor applications and the sensitivities of the proposed biosensors. The $I_{\text{on}} / I_{\text{off}}$ sensitivity of the inverted T-shaped TFET biosensor is superior to those jobs.

Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage(Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was proposed to optimize its temperature coefficient(Tco). The results suggested that the Tco of low temperature programmed high temperature read is larger than high temperature programmed low temperature read and this difference is about 2-3mv/∘Z, which makes against the temperature compensation of reading voltage and lead to irreparable data errors even there is error correction codes. Furthermore, the critical factor of this difference was demonstrated that is the charge loss during low temperature programmed high temperature read and the Vth shift caused by charge loss is up to 30 percent. Based on this, we proposed to optimize the Tco consistency by shortening the interval time of erase to program in endurance cycling stage and confirmed that this method is effective by experiment. As the time interval becomes smaller, the difference of the Tco decreases as well, which have great reference signification for improving the reliability of 3D NAND flash memory.

In this letter, ultra-wide-bandgap Ga2O3 as the interlayer is grown by mist chemical vapor deposition (mist-CVD) between perovskite and TiO2 electron transport layer in perovskite photodetectors (PDs). To get a stable working condition and low-cost fabrication, all-inorganic CsPbIBr2 is adopted and the expensive vacuum-deposited metal electrode is replaced by printing carbon paste. The vacuum-free, self-powered CsPbIBr2 PD with Ga2O3 interlayer achieves an obviously improved performance, with a low dark current of 4.15×10-9 A, high responsibility of 0.22 A/W, fast response time of 1.83 μs, and high peak specific detectivity of 1.83×1012 Jones. This work provides a strategy to develop high-performance self-powered PDs with the ultra-wide-bandgap Ga2O3 interlayer and a reduced cost.

The inorganic perovskite has a better stability than the hybrid halide perovskite, and at the same time it has the potential to achieve an excellent photoelectric performance as the organic-inorganic hybrid halide perovskite. Thus, the pursuit of a low-cost and high-performance inorganic perovskite solar cell (PSC) is becoming the research hot point in the research field of perovskite devices. In setting out to build vacuum-free and carbon-based all-inorganic PSCs with the traits of simple fabrication and low cost, we propose the ones with a simplified vertical structure of FTO/CsPbIBr₂/carbon upon interfacial modification with PEI species. In this structure, both the electron-transporting-layer and hole-transporting-layer are abandoned, and the noble metal is also replaced by the carbon paste. At the same time, FTO is modified by PEI, which brings dipoles to decrease the work function of FTO. Through our measurements, the carrier recombination has been partially suppressed, and the performance of champion PSCs has far exceeded the control devices without PEI modification, which yields a power conversion efficiency of 4.9% with an open circuit voltage of 0.9 V and a fill factor of 50.4%. Our work contributes significantly to give an available method to explore charge-transporting-layer-free, low-cost, and high-performance PSCs.

With the rapid development of semiconductor technology, traditional equation-based modeling faces challenges in accuracy and development time. To overcome these limitations, neural network (NN)-based modeling methods have been proposed. However, the NN-based compact model encounters two major issues. Firstly, it exhibits unphysical behaviors such as un-smoothness and non-monotonicity, which hinder its practical use. Secondly, finding an appropriate NN structure with high accuracy requires expertise and is time-consuming. In this paper, we propose an Automatic Physical-Informed Neural Network (AutoPINN) generation framework to solve these challenges. The framework consists of two parts: the Physics-Informed Neural Network (PINN) and the two-step Automatic Neural Network (AutoNN). The PINN is introduced to resolve unphysical issues by incorporating physical information. The AutoNN assists the PINN in automatically determining an optimal structure without human involvement. We evaluate the proposed AutoPINN framework on the gate-all-around transistor device. The results demonstrate that AutoPINN achieves an error of less than 0.05%. The generalization of our NN is promising, as validated by the test error and the loss landscape. The results demonstrate smoothness in high-order derivatives, and the monotonicity can be well-preserved. We believe that this work has the potential to accelerate the development and simulation process of emerging devices.