This paper evaluates the key factors influencing the design of optical wireless communication (OWC) systems operating in the mid-infrared range. The performed analysis has shown that working in this spectral “window”, compared to other wavelengths, is more effective in reducing the attenuation of radiation. The main goal was to verify the capabilities of the “on-shelf” interband cascade (IC) laser in the context of OWC system construction, considering its output power, modulation rate, room temperature operation, and integrated structure. For this purpose, a lab model of a data link with IC laser has been developed. Based on its main parameters, the estimation of signal-to-noise power ratio versus data link range was made. That range was about 2 km for a case of low scintillation and relatively low visibility. In the experimental part of the work, the obtained modulation rate was 70 MHz for NRZ (non-return-to-zero) format coding. It is an outstanding result taking into consideration IC laser operated at room temperature.
1 April 2019 in IEEE Journal of Selected Topics in Quantum Electronics
Interference of laser beams in a suitable medium creates dynamic optical gratings which can serve for a wide variety of applications, ranging from real-time holography to ultrasound generation. Typically, the interference occurs in a sample material that is separated from the laser sources. Here we explore a new aspect of laser-induced dynamic gratings: microwave generation occurring inside the cavity of semiconductor laser frequency comb generators, such as quantum cascade lasers and interband cascade lasers. The interplay between laser light and microwaves in these devices reveals intracavity spatiotemporal phenomena that are of great importance for the understanding of their physics and for their operation to be efficient. Grating effects related to laser locking dynamics, structured cavities and microwave propagation are demonstrated. Applications in science and technology based on these phenomena, including the realization of novel hybrid electronic-photonic devices, will also be presented.
This study presents the performance of a multi-gas sensor for greenhouse detection based on quartz-enhanced photoacoustic spectroscopy (QEPAS). The QEPAS sensor exploits an innovative, compact three-wavelength laser module as excitation source. The module integrates three interband cascade laser chips with a beam combining system, all enclosed in a compact metallic package with sizes of 40 × 52 × 17 mm to generate a single output beam. The multi-gas QEPAS sensor was tested in a laboratory environment for the sequential detection of two greenhouse gases, methane (CH4) and carbon dioxide (CO2), and a precursor greenhouse gas, carbon monoxide (CO). At an integration time of 100 ms, minimum detection limits of 21 ppb, 363 ppb, and 156 ppb, were estimated for CH4, CO2, and CO detection, respectively, all well below their natural abundance in air.
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of current practical needs. These include chemical sensing, environmental monitoring, industrial process control, medical diagnostics, thermal imaging, LIDAR, free space optical communication, and security monitoring. However, mid-IR device technologies are currently still works in progress that are generally much less mature than their near infrared and visible counterparts. Not only are most of the relevant materials more difficult to grow and process, but attainment of the desired optical device performance is often fundamentally more challenging. This Roadmap will review the leading applications for mid-IR optoelectronics, summarize the status and deficiencies of current device technologies, and then suggest possible roadmaps for improving and maturing the performance, manufacturability, and cost of each device type so the critical needs that are uniquely addressed by mid-IR photonics can be satisfied.
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 µm) uniquely address a wide range of current practical needs. These include chemical sensing, environmental monitoring, industrial process control, medical diagnostics, thermal imaging, LIDAR, free space optical communication, and security monitoring. However, mid-IR device technologies are currently still works in progress that are generally much less mature than their near infrared and visible counterparts. Not only are most of the relevant materials more difficult to grow and process, but attainment of the desired optical device performance is often fundamentally more challenging. This Roadmap will review the leading applications for mid-IR optoelectronics, summarize the status and deficiencies of current device technologies, and then suggest possible roadmaps for improving and maturing the performance, manufacturability, and cost of each device type so the critical needs that are uniquely addressed by mid-IR photonics can be satisfied.
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 µm) uniquely address a wide range of current practical needs. These include chemical sensing, environmental monitoring, industrial process control, medical diagnostics, thermal imaging, LIDAR, free space optical communication, and security monitoring. However, mid-IR device technologies are currently still works in progress that are generally much less mature than their near infrared and visible counterparts. Not only are most of the relevant materials more difficult to grow and process, but attainment of the desired optical device performance is often fundamentally more challenging. This Roadmap will review the leading applications for mid-IR optoelectronics, summarize the status and deficiencies of current device technologies, and then suggest possible roadmaps for improving and maturing the performance, manufacturability, and cost of each device type so the critical needs that are uniquely addressed by mid-IR photonics can be satisfied.