This letter reports the polymer passivation of field plated lateral $\beta $ -Ga ₂ O ₃ MOSFETs with significant improvement in the breakdown voltages as compared to non-passivated devices. We show consistent results of higher breakdown voltages in passivated devices as compared to non-passivated devices for MOSFETs with $\text{L}_{\textit {gd}}$ ranging from $30~\mu \text{m}$ to $70~\mu \text{m}$ and across two process runs. We obtain a record high breakdown voltage of 6.72 kV for a MOSFET with $\text{L}_{\textit {gd}}= {40}\mu \text{m}$ giving an average field strength of 1.69 MVcm ⁻¹ . The peak drain current is $\sim ~3$ mA/mm for $\text{L}_{g}= {2}\mu \text{m}$ device with a gate source separation of $3~\mu \text{m}$ . The on-resistance for the device is, $\text{R}_{\textit {on}}= {13}\,\,\text{k}\Omega ^{.}$ mm, giving a power device Figure of Merit of 7.73 kWcm ⁻² . The $\text{R}_{\textit {on}}$ is high due to plasma induced damage of channel and access regions. The $\text{R}_{\textit {on}}$ and on-current density remain unchanged after passivation. The breakdown increases with $\text{L}_{\textit {gd}}$ up to 70 $\mu \text{m}$ , giving a maximum breakdown voltage of 8.03 kV.

Electrodeposition, which features low cost, easy scale-up, good control in the composition and great flexible substrate compatibility, is a favorable technique for producing thin films. This paper reviews the use of the electrodeposition technique for the fabrication of several representative chalcogenides that have been widely used in photovoltaic devices. The review focuses on narrating the mechanisms for the formation of films and the key factors that affect the morphology, composition, crystal structure and electric and photovoltaic properties of the films. The review ends with a remark section addressing some of the key issues in the electrodeposition method towards creating high quality chalcogenide films.

High crystalline quality thick β-Ga₂O₃ drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga₂O₃ thin films grown on Sn-doped (010) and (001) β-Ga₂O₃ substrates by LPCVD with a fast growth rate varying from 13 to 21 μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.

This work presents the fabrication and performance analysis of a novel enhancement-mode (E-mode) vertical β-Ga₂O₃ (010) U-trench MOSFET featuring an in-situ Mg-doped current blocking layer (CBL) for high-power applications. Utilizing metal-organic chemical vapor deposition (MOCVD), we achieved precise Mg doping of 1.3×10¹⁹ cm⁻³ within the CBL to enhance current blocking capability while maintaining a robust threshold voltage of 5 V and a low on-state resistance of 5 mΩ .cm². The device achieved an on-current of 1.56 kA/cm² at V_GS = 20 V and V_DS = 40 V. The fabricated devices demonstrate a peak breakdown voltage of 101 V with an average breakdown field strength of up to 1.68 MV.cm⁻¹. The calculated power device Figure of Merit is 2 MW.cm⁻².

A systematic investigation of the electrical characteristics of β-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad resulted in a significant decrease in on-current and an increase in on-resistance compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher gamma radiation doses of 3 and 5 Mrad, a partial recovery of the device performance occurred, attributed to a radiation annealing effect. Capacitance–voltage (C–V) measurements showed a decrease in net carrier concentration in the β-Ga2O3 drift layer, from ∼3.20 × 1016 to ∼3.05 × 1016 cm−3, after 5 Mrad irradiation. Temperature-dependent I–V characteristics showed that 5 Mrad irradiation leads to a reduction in both forward and reverse currents across all investigated temperatures ranging from 25 to 250 °C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. Additionally, a slight increase in reverse breakdown voltage was observed post-radiation. Overall, β-Ga2O3 SBDs exhibit high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environment.

We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa’s potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa’s suitability for achieving high growth rates in Ga2O3 epilayers for vertical power electronic devices.