A more efficient solution to obtain ML Ga₂O₃ by exfoliation from indium-doped bulk β-Ga₂O₃. Investigated exfoliation energy, stability, band structure, and carrier mobility, and the transport properties of In-doped ML Ga₂O₃ MOSFETs are simulated.

In this paper, the Fe³⁺ doped rutile phase TiO₂ nanotubes arrays (NTAs) were prepared in a low temperature water-assistant crystallization method. It is noteworthy that the Fe³⁺ doping hardly hinders either the crystallization of rutile TiO₂ NTAs or the highly-ordered nanotubular morphologies. Moreover, Fe³⁺ did not form other compound impurities, which indicated that Fe³⁺ substitute Ti⁴⁺ into the lattice of TiO₂. With the introduction of Fe³⁺, the light absorption range of TiO₂ NTAs extends from the ultraviolet band to the visible light range. Photocatalytic testing results indicate that Fe³⁺ doped TiO₂ NTAs can effectively improve the degradation rate of methyl orange aqueous solution in visible light, and the TiO₂ NTAs with 0.2 mol/L Fe³⁺ doping exhibits the highest photocatalytic degradation efficiency.

Double perovskite Cs₂SnI₆ and its doping products (with SnI₂, SnF₂ or organic lithium salts added) have been utilized as p-type hole transport materials for perovskite and dye-sensitized solar cells in many pieces of research, where the mechanism for producing p-type Cs₂SnI₆ is rarely reported. In this paper, the mechanism of forming p-type Li⁺ doped Cs₂SnI₆ was revealed by first-principles simulation. The simulation results show that Li⁺ entered the Cs₂SnI₆ lattice by interstitial doping to form strong interaction between Li⁺ and I⁻, resulting in the splitting of the α spin-orbital of I–p at the top of the valence band, with the intermediate energy levels created and the absorption edge redshifted. The experimental results confirmed that Li⁺ doping neither changed the crystal phase of Cs₂SnI₆, nor introduced impurities. The Hall effect test results of Li⁺ doped Cs₂SnI₆ thin film samples showed that Li⁺ doping transformed Cs₂SnI₆ into a p-type semiconductor, and substantially promoted its carrier mobility (356.6 cm²/Vs), making it an ideal hole transport material.

The freeform surface quality is limited by the measurement, and form error cannot be convergent via compensation machining. This paper proposed a surface matching measurement strategy based on the least squares principle and iterative precision adjustment to precisely obtain surface form error after manufacturing by single point diamond turning. Through the coordinate transformation of translation and rotation, the measured surface was aligned with theoretical surface at the same coordinate system. The corresponding simulation was carried out to verify the performance of the proposed method, and the simulation results indicated that this method can achieve accurate alignment in a sub-nanometer range. Finally, with XY polynomial freeform surface as the ideal surface, compensation experiments were undertaken. The form error of freeform converged continuously after compensation machining for three times, during which the form accuracy of PV and RMS were down to 335 nm and 34 nm respectively from 1.4 um and 173 nm. The results showed that capability of the proposed compensation method was verified and the form accuracy could be improved effectively.

With an EBV technique and post-annealing method, solar-blind photodetectors of β-Ga₂O₃ film were fabricated on silicon thermal oxide wafers.