Dr. Enrique Miranda

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Academic Career Length

34Years (1993-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 February 2017 in Advanced Functional Materials

Journal Article

Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Chengbin Pan

Yanfeng Ji

Na Xiao

Fei Hui

Kechao Tang

Mario Lanza

+10

12 July 2011 in IEEE Transactions on Electron Devices

Journal Article

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk

Damian Walczyk

Thomas Schroeder

Thomas Bertaud

Małgorzata Sowinska

Christian Wenger

Back-end-of-line integrated 1 × μm ² TiN/HfO ₂ /Ti/TiN MIM memory devices in a 0.25- μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent I - V characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at φ ≈ 0.2 eV below the HfO ₂ conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the I - V cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the off-state current, but also stronger temperature dependence. The temperature effect on the on-state and off-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential.

26 April 2010 in IEEE Electron Device Letters

Journal Article

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

Enrique Miranda

Christian Walczyk

Christian Wenger

Thomas Schroeder

A physics-based analytical model for the current-voltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO ₂ layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range.

5 November 2012 in Applied Physics Letters

Journal Article

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

G. Bersuker

Overcoming challenges associated with implementation of resistive random access memory technology for non-volatile information storage requires identifying the material characteristics responsible for resistive switching. In order to connect the switching phenomenon to the nano-scale morphological features of the dielectrics employed in memory cells, we applied the enhanced conductive atomic force microscopy technique for in situ analysis of the simultaneously collected electrical and topographical data on HfO₂ stacks of various degrees of crystallinity. We demonstrate that the resistive switching is a local phenomenon associated with the formation of a conductive filament with a sufficiently small cross-section, which is determined by the maximum passing current. Switchable filament is found to be formed at the dielectric sites where the forming voltages were sufficiently small, which, in the case of the stoichiometric HfO₂, is observed exclusively at the grain boundary regions representing low resistant conductive paths through the dielectric film.

6 May 2013 in Applied Physics Letters

Journal Article

Quantum-size effects in hafnium-oxide resistive switching

Shibing Long

Xiaojuan Lian

Carlo Cagli

Xavier Cartoixà

Riccardo Rurali

Jordi Suñé

Discrete changes of conductance of the order of G₀ = 2e²/h reported during the unipolar reset transitions of Pt/HfO₂/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO₂ with single- to few-atom diameters behave as QWs and are capable of carrying current with G₀ conductance.

14 October 2013 in Scientific Reports

Journal Article

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Shibing Long

Luca Perniola

Carlo Cagli

Julien Buckley

Xiaojuan Lian

Jordi Suñé

Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO₂-based RRAM was statistically investigated in terms of the CF conductance evolution. The RESET usually combines an abrupt conductance drop with a progressive phase ending with the complete CF rupture. RESET1 and RESET2 events, corresponding to the initial and final phase of RESET, are found to be controlled by the voltage and power in the CF, respectively. A Monte Carlo simulator based on the thermal dissolution model of unipolar RESET reproduces all of the experimental observations. The results contribute to an improved physics-based understanding on the switching mechanisms and provide additional support to the thermal dissolution model.

About Me

Enrique Miranda is Professor at the Universitat Autonoma de Barcelona (UAB), Spain. He has a Ph.D. in Electronics Engineering from the UAB (1999) and a Ph.D. in Physics from the Universidad de Buenos Aires, Argentina (2001). He received numerous scholarships and awards, including INTERCAMPUS (Universidad de Zaragoza, Spain), MUTIS (UAB), RAMON y CAJAL (UAB), DAAD (Technical University Hamburg-Harburg), from the Italian government (Universita Degli Studi di Padova), MATSUMAE (Tokyo Institute of Technology, Japan), TAN CHIN TUAN (Nanyang Technological University, Singapore), the WALTON award from the Science Foundation Ireland (Tyndall National Institute), Distinguished Visitor Award (Royal Academy of Engineering, UK), CESAR MILSTEIN (CNEA, Argentina), and Visiting Professorships from the Abdus Salam International Centre for Theoretical Physics, Slovak Academy of Sciences, Politecnico di Torino, Leverhulme Trust (University College London), as well as the Nokia Foundation (University of Turku, Finland). He serves as a Distinguished Lecturer for the Electronic Devices Society (EDS-IEEE) since 2001 and has been the Associate Editor of Microelectronics Reliability since 2003. He was a visiting scientist at the Indian Institute of Technology; the Technical University Darmstadt, IHP; the Universita di Napoli, Modena, Cagliari; and Soochow University. He has authored and co-authored around 250 peer-review journal papers, most of them devoted to electron transport mechanisms.

Dr. Enrique Miranda

Dr. Enrique Miranda

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About Me