The use of CH₄ as an energy source is increasing every day. To increase the efficiency of CH₄ combustion and ensure that the equipment meets ecological requirements, it is necessary to measure the CH₄ concentration in the exhaust gases of combustion systems. To this end, sensors are required that can withstand extreme operating conditions, including temperatures of at least 600 °C, as well as high pressure and gas flow rate. ZnGa₂O₄, being an ultra-wide bandgap semiconductor with high chemical and thermal stability, is a promising material for such sensors. The synthesis and investigation of the structural and CH₄ sensing properties of ceramic pellets made from pure and Er-doped ZnGa₂O₄ were conducted. Doping with Er leads to the formation of a secondary Er₃Ga₅O₁₂ phase and an increase in the active surface area. This structural change significantly enhanced the CH₄ response, demonstrating an 11.1-fold improvement at a concentration of 10⁴ ppm. At the optimal response temperature of 650 °C, the Er-doped ZnGa₂O₄ exhibited responses of 2.91 a.u. and 20.74 a.u. to 100 ppm and 10⁴ ppm of CH₄, respectively. The Er-doped material is notable for its broad dynamic range for CH₄ concentrations (from 100 to 20,000 ppm), low sensitivity to humidity variations within the 30–70% relative humidity range, and robust stability under cyclic gas exposure. In addition to CH₄, the sensitivity of Er-doped ZnGa₂O₄ to other gases at a temperature of 650 °C was investigated. The samples showed strong responses to C₂H₄, C₃H₈, C₄H₁₀, NO_2, and H₂, which, at gas concentrations of 100 ppm, were higher than the response to CH₄ by a factor of 2.41, 2.75, 3.09, 1.16, and 1.64, respectively. The study proposes a plausible mechanism explaining the sensing effect of Er-doped ZnGa₂O₄ and discusses its potential for developing high-temperature CH₄ sensors for applications such as combustion monitoring systems and determining the ideal fuel/air mixture.

The synthesis of β-Ga₂O₃ ceramic was achieved using high-energy electron beams for the first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV electron beam resulted in a monolithic ceramic structure, eliminating powder particles and imperfections. The synthesized β-Ga₂O₃ ceramic exhibited a close-to-ideal composition of O/Ga in a 3:2 ratio. X-ray diffraction analysis confirmed a monoclinic structure (space group C2/m) that matched the reference diagram before and after annealing. Photoluminescence spectra revealed multiple luminescence peaks at blue (~2.7 eV) and UV (3.3, 3.4, 3.8 eV) wavelengths for the synthesized ceramic and commercial crystals. Raman spectroscopy confirmed the bonding modes in the synthesized ceramic. The electron beam-assisted method offers a rapid and cost-effective approach for β-Ga₂O₃ ceramic production without requiring additional equipment or complex manipulations. This method holds promise for fabricating refractory ceramics with high melting points, both doped and undoped.

Synthesis in the radiation field is a promising direction for the development of materials transformation processes, especially those differing in melting temperature. It has been established that the synthesis of yttrium–aluminum ceramics from yttrium oxides and aluminum metals in the region of a powerful high-energy electron flux is realized in 1 s, without any manifestations that facilitate synthesis, with high productivity. It is assumed that the high rate and efficiency of synthesis are due to processes that are realized with the formation of radicals, short-lived defects formed during the decay of electronic excitations. This article presents descriptions of the energy-transferring processes of an electron stream with energies of 1.4, 2.0, and 2.5 MeV to the initial radiation (mixture) for the production of YAG:Ce ceramics. YAG:Ce (Y₃Al₅O₁₂:Ce) ceramics samples in the field of electron flux of different energies and power densities were synthesized. The results of a study of the dependence of the morphology, crystal structure, and luminescence properties of the resulting ceramics on the synthesis modes, electron energy, and electron flux power are presented.

In this work, we present the results of the structure and luminescence properties of YAG:Ce (Y₃Al₅O₁₂ doped with Ce³⁺ ions) ceramic samples. Their synthesis was carried out by sintering samples from the initial oxide powders under the powerful action of a high-energy electron beam with an energy of 1.4 MeV and a power density of 22–25 kW/cm². The measured diffraction patterns of the synthesized ceramics are in good agreement with the standard for YAG. Luminescence characteristics at stationary/time-resolved regimes were studied. It is shown that under the influence of a high-power electron beam on a mixture of powders, it is possible to synthesize YAG:Ce luminescent ceramics with characteristics close to the well-known YAG:Ce phosphor ceramics obtained by traditional methods of solid-state synthesis. Thus, it has been demonstrated that the technology of radiation synthesis of luminescent ceramics is very promising.

Using synchrotron radiation, a comparative VUV excitation study of YAG ceramics doped with Eu³⁺ and Cr³⁺ ions under VUV excitation (10.5–3.7 eV) at 9 K was conducted in this work. Both ceramics exhibit distinct excitation peaks in the VUV region, indicating high-energy transitions related to the internal electronic levels of the dopants and interband transitions within the YAG matrix. For YAG:Eu, the main excitation peaks at 6–7 eV correspond to transitions within the 4f-shell of Eu³⁺ and Eu³⁺-O²⁻ charge transfer states, showing weak dependence on the crystal field and high energy conversion efficiency. In contrast, YAG:Cr shows broad excitation bands due to transitions between levels influenced by strong crystal field interactions, resulting in lower luminescence efficiency. The study highlights the importance of crystal structure and dopant interactions in determining the spectral characteristics of YAG-based ceramics, offering potential for their application in advanced optoelectronic devices.