The use of CH₄ as an energy source is increasing every day. To increase the efficiency of CH₄ combustion and ensure that the equipment meets ecological requirements, it is necessary to measure the CH₄ concentration in the exhaust gases of combustion systems. To this end, sensors are required that can withstand extreme operating conditions, including temperatures of at least 600 °C, as well as high pressure and gas flow rate. ZnGa₂O₄, being an ultra-wide bandgap semiconductor with high chemical and thermal stability, is a promising material for such sensors. The synthesis and investigation of the structural and CH₄ sensing properties of ceramic pellets made from pure and Er-doped ZnGa₂O₄ were conducted. Doping with Er leads to the formation of a secondary Er₃Ga₅O₁₂ phase and an increase in the active surface area. This structural change significantly enhanced the CH₄ response, demonstrating an 11.1-fold improvement at a concentration of 10⁴ ppm. At the optimal response temperature of 650 °C, the Er-doped ZnGa₂O₄ exhibited responses of 2.91 a.u. and 20.74 a.u. to 100 ppm and 10⁴ ppm of CH₄, respectively. The Er-doped material is notable for its broad dynamic range for CH₄ concentrations (from 100 to 20,000 ppm), low sensitivity to humidity variations within the 30–70% relative humidity range, and robust stability under cyclic gas exposure. In addition to CH₄, the sensitivity of Er-doped ZnGa₂O₄ to other gases at a temperature of 650 °C was investigated. The samples showed strong responses to C₂H₄, C₃H₈, C₄H₁₀, NO_2, and H₂, which, at gas concentrations of 100 ppm, were higher than the response to CH₄ by a factor of 2.41, 2.75, 3.09, 1.16, and 1.64, respectively. The study proposes a plausible mechanism explaining the sensing effect of Er-doped ZnGa₂O₄ and discusses its potential for developing high-temperature CH₄ sensors for applications such as combustion monitoring systems and determining the ideal fuel/air mixture.

Using synchrotron radiation, a comparative VUV excitation study of YAG ceramics doped with Eu³⁺ and Cr³⁺ ions under VUV excitation (10.5–3.7 eV) at 9 K was conducted in this work. Both ceramics exhibit distinct excitation peaks in the VUV region, indicating high-energy transitions related to the internal electronic levels of the dopants and interband transitions within the YAG matrix. For YAG:Eu, the main excitation peaks at 6–7 eV correspond to transitions within the 4f-shell of Eu³⁺ and Eu³⁺-O²⁻ charge transfer states, showing weak dependence on the crystal field and high energy conversion efficiency. In contrast, YAG:Cr shows broad excitation bands due to transitions between levels influenced by strong crystal field interactions, resulting in lower luminescence efficiency. The study highlights the importance of crystal structure and dopant interactions in determining the spectral characteristics of YAG-based ceramics, offering potential for their application in advanced optoelectronic devices.

The luminescence properties of BaMgF₄ ceramics synthesized using electron beam-assisted synthesis were investigated under vacuum ultraviolet (VUV) synchrotron excitation at a cryogenic temperature of T = 9 K. Their excitation spectra, measured over the 4–10.8 eV range, and corresponding luminescence spectra revealed a complex multicomponent structure with emission maxima at 3.71, 3.55, 3.33, 3, and ~2.8 eV. The primary luminescence band at 330 nm was attributed to self-trapped excitons (STE) excited near the band edge (9.3–9.7 eV), indicating interband transitions and subsequent excitonic relaxation. Bands at 3 and ~2.8 eV were associated with defect states efficiently excited at 6.45 eV, 8 eV and high-energy transitions near 10.3 eV. The excitation spectrum showed distinct maxima at 5, 6.45, and 8 eV, which were interpreted as excitations of defect-related states. These results highlight the interplay between interband transitions, excitonic processes, and defect-related luminescence, which defines the complex dynamics of BaMgF₄ ceramics. These findings confirm that radiation synthesis introduces defect centers influencing luminescent properties, making BaMgF₄ a promising material for VUV and UV applications.

The optical and vibrational responses of Gd₃Ga₅O₁₂ (GGG) single crystals to 147 MeV Kr-ion irradiations were systematically investigated to clarify defect formation pathways and their influence on luminescence mechanisms. Absorption spectra measured at room temperature reveal a stepwise redshift of the fundamental edge and the progressive development of a broad sub-band-gap tail between 4.4 and 5.3 eV, indicating the accumulation of F- and F⁺-type oxygen-vacancy centers and increasing structural disorder. Raman spectroscopy shows that, despite substantial track overlap at fluences up to 10¹⁴ ions/cm², the crystal preserves its phonon frequencies and linewidths, while peak intensities decrease due to a growing disordered volume fraction. Low-temperature (13 K) photoluminescence demonstrates the persistence of a dominant broad band near 2.4 eV and the emergence of an additional irradiation-induced band at ~2.75 eV whose width increases with fluence, reflecting the formation of vacancy-related defect complexes. Excitation spectra transform from band-edge-dominated behavior in the pristine crystal to defect-tail-mediated excitation in heavily irradiated samples. These results provide a consistent spectroscopic picture of ion-track-induced disorder in GGG and identify the defect states governing its luminescence under extreme irradiation conditions.