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In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.
Ciro Scognamillo; Antonio Catalano; Michele Riccio; Vincenzo D’Alessandro; Lorenzo Codecasa; Alessandro Borghese; Ravi Tripathi; Alberto Castellazzi; Giovanni Breglio; Andrea Irace. Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics. Energies 2021, 14, 4683 .
AMA StyleCiro Scognamillo, Antonio Catalano, Michele Riccio, Vincenzo D’Alessandro, Lorenzo Codecasa, Alessandro Borghese, Ravi Tripathi, Alberto Castellazzi, Giovanni Breglio, Andrea Irace. Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics. Energies. 2021; 14 (15):4683.
Chicago/Turabian StyleCiro Scognamillo; Antonio Catalano; Michele Riccio; Vincenzo D’Alessandro; Lorenzo Codecasa; Alessandro Borghese; Ravi Tripathi; Alberto Castellazzi; Giovanni Breglio; Andrea Irace. 2021. "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics." Energies 14, no. 15: 4683.
(1) Background: the aim of this study was to evaluate if dental anxiety can be measured objectively using thermal infrared imaging. (2) Methods: Patients referred to the Department of Oral Surgery of the University of Naples Federico II and requiring dental extractions were consecutively enrolled in the study. Face thermal distribution images of the patients were acquired before and during their first clinical examination using infrared thermal cameras. The data were analyzed in relation to five regions of interest (ROI) of the patient’s face (nose, ear, forehead, zygoma, chin). The differences in the temperatures assessed between the two measurements for each ROI were evaluated by using paired T-test. The Pearson correlation and linear regression were performed to evaluate the association between differences in temperatures and Modified Dental Anxiety Scale (MDAS) questionnaire score, age, and gender; (3) results: sixty participants were enrolled in the study (28 males and 32 females; mean age 57.4 year-old; age range 18–80 year-old). Only for nose and ear zone there was a statistically significant difference between measurements at baseline and visit. Correlation between the thermal imaging measurements and the scores of the MDAS questionnaire was found for nose and ear, but not for all of the other regions. (4) Conclusions: the study demonstrated a potential use of thermal infrared imaging to measure dental anxiety.
Roberta Gasparro; Grazia Leonetti; Michele Riccio; Andrea Irace; Gilberto Sammartino; Andrea Blasi; Cristiano Scandurra; Nelson Maldonato; Pasquale Sammartino; Gaetano Marenzi. Thermography as a Method to Detect Dental Anxiety in Oral Surgery. Applied Sciences 2021, 11, 5421 .
AMA StyleRoberta Gasparro, Grazia Leonetti, Michele Riccio, Andrea Irace, Gilberto Sammartino, Andrea Blasi, Cristiano Scandurra, Nelson Maldonato, Pasquale Sammartino, Gaetano Marenzi. Thermography as a Method to Detect Dental Anxiety in Oral Surgery. Applied Sciences. 2021; 11 (12):5421.
Chicago/Turabian StyleRoberta Gasparro; Grazia Leonetti; Michele Riccio; Andrea Irace; Gilberto Sammartino; Andrea Blasi; Cristiano Scandurra; Nelson Maldonato; Pasquale Sammartino; Gaetano Marenzi. 2021. "Thermography as a Method to Detect Dental Anxiety in Oral Surgery." Applied Sciences 11, no. 12: 5421.
The i-pipe system is a peculiar structural health monitoring system, based on Fiber Bragg Grating technology, installed on the central beam pipe of the Compact Muon Solenoid (CMS) experiment at CERN. In this contribution, i-pipe temperature sensors, originally conceived as thermal compensator for the strain sensors, are employed to monitor central beam pipe thermal behavior in correlation with the parameters of the particle beam travelling inside, in order to directly measure possible Beam RF Induced Heating effect. The i-pipe system turned out to be capable of monitor, directly and without interference, the parameters of the particle beam circulating in the LHC ring. Hence, the results presented in this work pave the way to the use of the i-pipe as monitoring system of an accelerated high energy particle beam.
Francesco Fienga; Vincenzo Romano Marrazzo; Sara Bennett Spedding; Zoltan Szillasi; Noemi Beni; Andrea Irace; Wolfram Zeuner; Austin Ball; Vittorio Giorgio Vaccaro; Benoit Salvant; Salvatore Buontempo; Giovanni Breglio. Fiber Bragg Grating Sensors as Innovative Monitoring Tool for Beam Induced RF Heating on LHC Beam Pipe. Journal of Lightwave Technology 2021, 39, 4145 -4150.
AMA StyleFrancesco Fienga, Vincenzo Romano Marrazzo, Sara Bennett Spedding, Zoltan Szillasi, Noemi Beni, Andrea Irace, Wolfram Zeuner, Austin Ball, Vittorio Giorgio Vaccaro, Benoit Salvant, Salvatore Buontempo, Giovanni Breglio. Fiber Bragg Grating Sensors as Innovative Monitoring Tool for Beam Induced RF Heating on LHC Beam Pipe. Journal of Lightwave Technology. 2021; 39 (12):4145-4150.
Chicago/Turabian StyleFrancesco Fienga; Vincenzo Romano Marrazzo; Sara Bennett Spedding; Zoltan Szillasi; Noemi Beni; Andrea Irace; Wolfram Zeuner; Austin Ball; Vittorio Giorgio Vaccaro; Benoit Salvant; Salvatore Buontempo; Giovanni Breglio. 2021. "Fiber Bragg Grating Sensors as Innovative Monitoring Tool for Beam Induced RF Heating on LHC Beam Pipe." Journal of Lightwave Technology 39, no. 12: 4145-4150.
This article presents a study on the short-circuit (SC) instability of p-doped gate gallium nitride (p-GaN) high-electron-mobility transistors (HEMTs). Under SC condition, self-sustained oscillation occurs when a package stray inductance is introduced in a common source. The SC oscillation features some unique characteristics. With higher dc-bus voltage, the SC oscillation tends to be more unstable. The SC oscillation of p-GaN HEMTs is, thereby, a real threat to the converter operation. When the common-source inductance is eliminated or a larger gate resistor is utilized, the SC oscillation can be dampened. Due to the SPICE simulation, the self-sustained SC oscillation is reproduced. The analyses on the simulated waveforms reveal a positive feedback mechanism that excites the SC oscillation. An analytical model is, thereby, derived to analyze the instability of the positive feedback system. The analyses reveal that the SC oscillation becomes more unstable ,,when the power loop or gate loop has smaller stray inductances, which makes some conventional oscillation suppression methods invalid. To avoid SC oscillation, some effective guidelines are proposed at the end of the article.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs. IEEE Transactions on Electron Devices 2020, 67, 4849 -4857.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs. IEEE Transactions on Electron Devices. 2020; 67 (11):4849-4857.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2020. "A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs." IEEE Transactions on Electron Devices 67, no. 11: 4849-4857.
This article presents an experimental investigation on the short-circuit (SC) instability of several commercially available cascode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). In the SC test, self-sustained oscillation is observed during the SC transient. The SC oscillation features some unique characteristics. The gate resistor shows very weak damping effect on the SC oscillation. The SC oscillation thereby cannot be suppressed by utilizing a large gate resistor. With the increase in the dc-bus voltage, the SC oscillation greatly amplifies and becomes more unstable. When the dc-bus voltage reaches 200-250 V, catastrophic failure occurs. In the SC test, two distinct failure modes, which are related to the failure of low-voltage (LV) MOSFET and depletion-mode HEMTs (DHEMTs), are identified. Based on the experimental evidence and simulation study, the root causes of the failure are clarified in the end.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs. IEEE Transactions on Electron Devices 2020, 67, 1686 -1692.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs. IEEE Transactions on Electron Devices. 2020; 67 (4):1686-1692.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2020. "Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs." IEEE Transactions on Electron Devices 67, no. 4: 1686-1692.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs. IEEE Transactions on Power Electronics 2019, 35, 6292 -6300.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs. IEEE Transactions on Power Electronics. 2019; 35 (6):6292-6300.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs." IEEE Transactions on Power Electronics 35, no. 6: 6292-6300.
The reduction of the trap density at the SiC/SiO2 interface of a SiC MOSFET is still an open issue for the next generations development. Since TCAD simulations are one of the most powerful tools adopted in the field of power semiconductor devices, in this work we define the guidelines for the calibration of the TCAD model from the point of view of the interface traps modeling. We have carried out a qualitative analysis of the effect of the SiC/SiO2 interface traps properties on the C-V curve by means of TCAD simulations, to support the interpretation of the experimental C-V curves of a SiC MOSFET. A new approach for the simulation of the C-V curves of a SiC MOSFET is proposed as well. The aim of the paper is the analysis of the effect of the SiC/SiO2 interface traps on the C-V curve by means of TCAD simulations.
Luca Maresca; Ilaria Matacena; Michele Riccio; Andrea Irace; Giovanni Breglio; Santolo Daliento. Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations. IEEE Journal of Emerging and Selected Topics in Power Electronics 2019, 9, 2171 -2179.
AMA StyleLuca Maresca, Ilaria Matacena, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento. Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2019; 9 (2):2171-2179.
Chicago/Turabian StyleLuca Maresca; Ilaria Matacena; Michele Riccio; Andrea Irace; Giovanni Breglio; Santolo Daliento. 2019. "Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations." IEEE Journal of Emerging and Selected Topics in Power Electronics 9, no. 2: 2171-2179.
Under certain conditions, self-sustained oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-sustained oscillation are identified based on the double-pulse test. To investigate the instability of the two types of oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-sustained oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the oscillation. In the end, the oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-sustained oscillation.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode. IEEE Transactions on Electron Devices 2019, 66, 4287 -4295.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode. IEEE Transactions on Electron Devices. 2019; 66 (10):4287-4295.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode." IEEE Transactions on Electron Devices 66, no. 10: 4287-4295.
Intelligent tire concept constitutes one of the approaches to increase the accuracy of active safety systems in vehicle technology. The possibility of detecting tire–road interactions instantaneously has made these systems one of the most important research areas in automotive engineering. This study introduces the use of cost-effective flex and polyvinylidene fluoride strain sensors to estimate some dynamic tire features in free-rolling and real working conditions. The proposed solution combines a microcontroller-based readout circuit for the two sensors with a wireless data transmission system. A suitable prototype was realized and first experimental tests were conducted, in the laboratory as well as on the road. The energy consumption of the wireless monitoring system was optimized. Simulated and experimental results validate the proposed solution.
Giovanni Breglio; Andrea Irace; Lorenzo Pugliese; Michele Riccio; Michele Russo; Salvatore Strano; Mario Terzo. Development and Testing of a Low-Cost Wireless Monitoring System for an Intelligent Tire†. Machines 2019, 7, 49 .
AMA StyleGiovanni Breglio, Andrea Irace, Lorenzo Pugliese, Michele Riccio, Michele Russo, Salvatore Strano, Mario Terzo. Development and Testing of a Low-Cost Wireless Monitoring System for an Intelligent Tire†. Machines. 2019; 7 (3):49.
Chicago/Turabian StyleGiovanni Breglio; Andrea Irace; Lorenzo Pugliese; Michele Riccio; Michele Russo; Salvatore Strano; Mario Terzo. 2019. "Development and Testing of a Low-Cost Wireless Monitoring System for an Intelligent Tire†." Machines 7, no. 3: 49.
Thanks to the increasing availability of SiC MOSFETs with outstanding static and dynamic performances, the number of applications in which these devices are used is rapidly growing. Despite that, the maximum current rating of such devices is usually limited at few hundred Amps, which sets an upper bound for the power level at which these transistors can be adopted. A viable solution to this problem consists in paralleling several SiC MOSFETs. However, the design of parallel configurations needs optimization since mismatched performances can cause the enhanced stress of a subset of devices, which can ultimately lead to premature failure of the whole module. In this contribution, several sets of Monte Carlo electrothermal simulations of parallel SiC MOSFETs are used to systematically relate the deviations of devices and circuit parameters to the resulting uneven power dissipation. To this purpose, a set of relevant parameters is identified and statistically described. Thereafter, the simulation of a 200 kHz synchronous buck converter relying on mismatched parallel MOSFETs is performed as case study. Eventually, a methodology to derive a guideline for the design of reliable multichip configurations is developed. The methodology is based on the iteration of Monte Carlo simulations for different tolerances of the parameters.
Alessandro Borghese; Michele Riccio; Asad Fayyaz; Alberto Castellazzi; Luca Maresca; Giovanni Breglio; Andrea Irace. Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics 2019, 7, 1527 -1538.
AMA StyleAlessandro Borghese, Michele Riccio, Asad Fayyaz, Alberto Castellazzi, Luca Maresca, Giovanni Breglio, Andrea Irace. Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2019; 7 (3):1527-1538.
Chicago/Turabian StyleAlessandro Borghese; Michele Riccio; Asad Fayyaz; Alberto Castellazzi; Luca Maresca; Giovanni Breglio; Andrea Irace. 2019. "Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs." IEEE Journal of Emerging and Selected Topics in Power Electronics 7, no. 3: 1527-1538.
This paper presents a comprehensive investigation on the self-sustained oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-sustained oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-sustained oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-sustained oscillation are obtained. The analyses reveal the oscillatory criteria of the self-sustained oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the oscillation. The proposed oscillation suppression methods are validated by the experiment at the end of the paper.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies 2019, 12, 2211 .
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies. 2019; 12 (11):2211.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention." Energies 12, no. 11: 2211.
This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-sustained oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-sustained oscillation is reproduced. The simulation results reveal the root cause of the self-sustained oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate-source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-sustained oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the oscillation are presented.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode. IEEE Transactions on Electron Devices 2018, 66, 605 -612.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode. IEEE Transactions on Electron Devices. 2018; 66 (1):605-612.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2018. "Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode." IEEE Transactions on Electron Devices 66, no. 1: 605-612.
Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered immune to electrostatic discharge (ESD) failures, since usually they withstand an avalanche energy one order of magnitude higher than that of the ESD. Consequently, few works consider this aspect. However, it was observed that during the mounting of power diodes in automotive systems (e.g., with operators touching and handling the devices), ESD events occur and devices fail. In this paper the ESD capability of 600 V fast recovery epitaxial diode (FRED) is analyzed by means of Technology Computer-Aided Design (TCAD) simulations, theoretical analyses and experimental characterization. Two doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The proposed design exhibits a higher ESD robustness and this is due to its superior capability in keeping the current distribution uniform in the structure in a critical condition such as the impact ionization avalanche effect. Both experimental and numerical results validate the proposed design.
Luca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies 2018, 11, 832 .
AMA StyleLuca Maresca, Giuseppe De Caro, Gianpaolo Romano, Michele Riccio, Giovanni Breglio, Andrea Irace, Laura Bellemo, Rossano Carta, Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies. 2018; 11 (4):832.
Chicago/Turabian StyleLuca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. 2018. "Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes." Energies 11, no. 4: 832.
This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The model describes the static and dynamic behavior and accounts for leakage current and impact ionization. The technology-dependent MOSFET parameters are extracted from characterization measurements and datasheets. SPICE standard components and analog behavior modeling blocks are adopted for the model implementation. The model ensures a good agreement with experimental data over a wide temperature range, even under out-of-safe-operating-area conditions close to the failure occurrence.
Michele Riccio; Vincenzo D Alessandro; Gianpaolo Romano; Luca Maresca; Giovanni Breglio; Andrea Irace. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations. IEEE Transactions on Power Electronics 2017, 33, 8020 -8029.
AMA StyleMichele Riccio, Vincenzo D Alessandro, Gianpaolo Romano, Luca Maresca, Giovanni Breglio, Andrea Irace. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations. IEEE Transactions on Power Electronics. 2017; 33 (9):8020-8029.
Chicago/Turabian StyleMichele Riccio; Vincenzo D Alessandro; Gianpaolo Romano; Luca Maresca; Giovanni Breglio; Andrea Irace. 2017. "A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations." IEEE Transactions on Power Electronics 33, no. 9: 8020-8029.
This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.
Asad Fayyaz; Gianpaolo Romano; Jesus Urresti; Michele Riccio; Alberto Castellazzi; Andrea Irace; Nick Wright. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies 2017, 10, 452 .
AMA StyleAsad Fayyaz, Gianpaolo Romano, Jesus Urresti, Michele Riccio, Alberto Castellazzi, Andrea Irace, Nick Wright. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies. 2017; 10 (4):452.
Chicago/Turabian StyleAsad Fayyaz; Gianpaolo Romano; Jesus Urresti; Michele Riccio; Alberto Castellazzi; Andrea Irace; Nick Wright. 2017. "A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs." Energies 10, no. 4: 452.
We review successful measurement techniques for the evaluation of the recombination properties in semiconductor materials based on the optically induced free carrier absorption. All the methodologies presented share the common feature of exploiting a laser beam to excite electron-hole pairs within the volume of the sample under investigation, while the probing methods can vary according to the different methodology analyzed. As recombination properties are of paramount importance in determining the properties of semiconductor devices (i.e, bipolar transistor gain, power devices switching features, and solar cells efficiency), their knowledge allows for better understanding of experimental results and robust TCAD simulator calibration. Being contactless and applicable without any particular preparation of the sample under investigation, they have been considered attractive to monitor these parameters inline or just after production of many different semiconductor devices.
Martina De Laurentis; Andrea Irace. Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect. Journal of Solid State Physics 2014, 2014, 1 -19.
AMA StyleMartina De Laurentis, Andrea Irace. Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect. Journal of Solid State Physics. 2014; 2014 ():1-19.
Chicago/Turabian StyleMartina De Laurentis; Andrea Irace. 2014. "Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect." Journal of Solid State Physics 2014, no. : 1-19.