This page has only limited features, please log in for full access.
In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.
Ciro Scognamillo; Antonio Catalano; Michele Riccio; Vincenzo D’Alessandro; Lorenzo Codecasa; Alessandro Borghese; Ravi Tripathi; Alberto Castellazzi; Giovanni Breglio; Andrea Irace. Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics. Energies 2021, 14, 4683 .
AMA StyleCiro Scognamillo, Antonio Catalano, Michele Riccio, Vincenzo D’Alessandro, Lorenzo Codecasa, Alessandro Borghese, Ravi Tripathi, Alberto Castellazzi, Giovanni Breglio, Andrea Irace. Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics. Energies. 2021; 14 (15):4683.
Chicago/Turabian StyleCiro Scognamillo; Antonio Catalano; Michele Riccio; Vincenzo D’Alessandro; Lorenzo Codecasa; Alessandro Borghese; Ravi Tripathi; Alberto Castellazzi; Giovanni Breglio; Andrea Irace. 2021. "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics." Energies 14, no. 15: 4683.
(1) Background: the aim of this study was to evaluate if dental anxiety can be measured objectively using thermal infrared imaging. (2) Methods: Patients referred to the Department of Oral Surgery of the University of Naples Federico II and requiring dental extractions were consecutively enrolled in the study. Face thermal distribution images of the patients were acquired before and during their first clinical examination using infrared thermal cameras. The data were analyzed in relation to five regions of interest (ROI) of the patient’s face (nose, ear, forehead, zygoma, chin). The differences in the temperatures assessed between the two measurements for each ROI were evaluated by using paired T-test. The Pearson correlation and linear regression were performed to evaluate the association between differences in temperatures and Modified Dental Anxiety Scale (MDAS) questionnaire score, age, and gender; (3) results: sixty participants were enrolled in the study (28 males and 32 females; mean age 57.4 year-old; age range 18–80 year-old). Only for nose and ear zone there was a statistically significant difference between measurements at baseline and visit. Correlation between the thermal imaging measurements and the scores of the MDAS questionnaire was found for nose and ear, but not for all of the other regions. (4) Conclusions: the study demonstrated a potential use of thermal infrared imaging to measure dental anxiety.
Roberta Gasparro; Grazia Leonetti; Michele Riccio; Andrea Irace; Gilberto Sammartino; Andrea Blasi; Cristiano Scandurra; Nelson Maldonato; Pasquale Sammartino; Gaetano Marenzi. Thermography as a Method to Detect Dental Anxiety in Oral Surgery. Applied Sciences 2021, 11, 5421 .
AMA StyleRoberta Gasparro, Grazia Leonetti, Michele Riccio, Andrea Irace, Gilberto Sammartino, Andrea Blasi, Cristiano Scandurra, Nelson Maldonato, Pasquale Sammartino, Gaetano Marenzi. Thermography as a Method to Detect Dental Anxiety in Oral Surgery. Applied Sciences. 2021; 11 (12):5421.
Chicago/Turabian StyleRoberta Gasparro; Grazia Leonetti; Michele Riccio; Andrea Irace; Gilberto Sammartino; Andrea Blasi; Cristiano Scandurra; Nelson Maldonato; Pasquale Sammartino; Gaetano Marenzi. 2021. "Thermography as a Method to Detect Dental Anxiety in Oral Surgery." Applied Sciences 11, no. 12: 5421.
This article presents a study on the short-circuit (SC) instability of p-doped gate gallium nitride (p-GaN) high-electron-mobility transistors (HEMTs). Under SC condition, self-sustained oscillation occurs when a package stray inductance is introduced in a common source. The SC oscillation features some unique characteristics. With higher dc-bus voltage, the SC oscillation tends to be more unstable. The SC oscillation of p-GaN HEMTs is, thereby, a real threat to the converter operation. When the common-source inductance is eliminated or a larger gate resistor is utilized, the SC oscillation can be dampened. Due to the SPICE simulation, the self-sustained SC oscillation is reproduced. The analyses on the simulated waveforms reveal a positive feedback mechanism that excites the SC oscillation. An analytical model is, thereby, derived to analyze the instability of the positive feedback system. The analyses reveal that the SC oscillation becomes more unstable ,,when the power loop or gate loop has smaller stray inductances, which makes some conventional oscillation suppression methods invalid. To avoid SC oscillation, some effective guidelines are proposed at the end of the article.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs. IEEE Transactions on Electron Devices 2020, 67, 4849 -4857.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs. IEEE Transactions on Electron Devices. 2020; 67 (11):4849-4857.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2020. "A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs." IEEE Transactions on Electron Devices 67, no. 11: 4849-4857.
This article presents an experimental investigation on the short-circuit (SC) instability of several commercially available cascode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). In the SC test, self-sustained oscillation is observed during the SC transient. The SC oscillation features some unique characteristics. The gate resistor shows very weak damping effect on the SC oscillation. The SC oscillation thereby cannot be suppressed by utilizing a large gate resistor. With the increase in the dc-bus voltage, the SC oscillation greatly amplifies and becomes more unstable. When the dc-bus voltage reaches 200-250 V, catastrophic failure occurs. In the SC test, two distinct failure modes, which are related to the failure of low-voltage (LV) MOSFET and depletion-mode HEMTs (DHEMTs), are identified. Based on the experimental evidence and simulation study, the root causes of the failure are clarified in the end.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs. IEEE Transactions on Electron Devices 2020, 67, 1686 -1692.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs. IEEE Transactions on Electron Devices. 2020; 67 (4):1686-1692.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2020. "Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs." IEEE Transactions on Electron Devices 67, no. 4: 1686-1692.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs. IEEE Transactions on Power Electronics 2019, 35, 6292 -6300.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs. IEEE Transactions on Power Electronics. 2019; 35 (6):6292-6300.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs." IEEE Transactions on Power Electronics 35, no. 6: 6292-6300.
The reduction of the trap density at the SiC/SiO2 interface of a SiC MOSFET is still an open issue for the next generations development. Since TCAD simulations are one of the most powerful tools adopted in the field of power semiconductor devices, in this work we define the guidelines for the calibration of the TCAD model from the point of view of the interface traps modeling. We have carried out a qualitative analysis of the effect of the SiC/SiO2 interface traps properties on the C-V curve by means of TCAD simulations, to support the interpretation of the experimental C-V curves of a SiC MOSFET. A new approach for the simulation of the C-V curves of a SiC MOSFET is proposed as well. The aim of the paper is the analysis of the effect of the SiC/SiO2 interface traps on the C-V curve by means of TCAD simulations.
Luca Maresca; Ilaria Matacena; Michele Riccio; Andrea Irace; Giovanni Breglio; Santolo Daliento. Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations. IEEE Journal of Emerging and Selected Topics in Power Electronics 2019, 9, 2171 -2179.
AMA StyleLuca Maresca, Ilaria Matacena, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento. Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2019; 9 (2):2171-2179.
Chicago/Turabian StyleLuca Maresca; Ilaria Matacena; Michele Riccio; Andrea Irace; Giovanni Breglio; Santolo Daliento. 2019. "Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations." IEEE Journal of Emerging and Selected Topics in Power Electronics 9, no. 2: 2171-2179.
Under certain conditions, self-sustained oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-sustained oscillation are identified based on the double-pulse test. To investigate the instability of the two types of oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-sustained oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the oscillation. In the end, the oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-sustained oscillation.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode. IEEE Transactions on Electron Devices 2019, 66, 4287 -4295.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode. IEEE Transactions on Electron Devices. 2019; 66 (10):4287-4295.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode." IEEE Transactions on Electron Devices 66, no. 10: 4287-4295.
Intelligent tire concept constitutes one of the approaches to increase the accuracy of active safety systems in vehicle technology. The possibility of detecting tire–road interactions instantaneously has made these systems one of the most important research areas in automotive engineering. This study introduces the use of cost-effective flex and polyvinylidene fluoride strain sensors to estimate some dynamic tire features in free-rolling and real working conditions. The proposed solution combines a microcontroller-based readout circuit for the two sensors with a wireless data transmission system. A suitable prototype was realized and first experimental tests were conducted, in the laboratory as well as on the road. The energy consumption of the wireless monitoring system was optimized. Simulated and experimental results validate the proposed solution.
Giovanni Breglio; Andrea Irace; Lorenzo Pugliese; Michele Riccio; Michele Russo; Salvatore Strano; Mario Terzo. Development and Testing of a Low-Cost Wireless Monitoring System for an Intelligent Tire†. Machines 2019, 7, 49 .
AMA StyleGiovanni Breglio, Andrea Irace, Lorenzo Pugliese, Michele Riccio, Michele Russo, Salvatore Strano, Mario Terzo. Development and Testing of a Low-Cost Wireless Monitoring System for an Intelligent Tire†. Machines. 2019; 7 (3):49.
Chicago/Turabian StyleGiovanni Breglio; Andrea Irace; Lorenzo Pugliese; Michele Riccio; Michele Russo; Salvatore Strano; Mario Terzo. 2019. "Development and Testing of a Low-Cost Wireless Monitoring System for an Intelligent Tire†." Machines 7, no. 3: 49.
Thanks to the increasing availability of SiC MOSFETs with outstanding static and dynamic performances, the number of applications in which these devices are used is rapidly growing. Despite that, the maximum current rating of such devices is usually limited at few hundred Amps, which sets an upper bound for the power level at which these transistors can be adopted. A viable solution to this problem consists in paralleling several SiC MOSFETs. However, the design of parallel configurations needs optimization since mismatched performances can cause the enhanced stress of a subset of devices, which can ultimately lead to premature failure of the whole module. In this contribution, several sets of Monte Carlo electrothermal simulations of parallel SiC MOSFETs are used to systematically relate the deviations of devices and circuit parameters to the resulting uneven power dissipation. To this purpose, a set of relevant parameters is identified and statistically described. Thereafter, the simulation of a 200 kHz synchronous buck converter relying on mismatched parallel MOSFETs is performed as case study. Eventually, a methodology to derive a guideline for the design of reliable multichip configurations is developed. The methodology is based on the iteration of Monte Carlo simulations for different tolerances of the parameters.
Alessandro Borghese; Michele Riccio; Asad Fayyaz; Alberto Castellazzi; Luca Maresca; Giovanni Breglio; Andrea Irace. Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics 2019, 7, 1527 -1538.
AMA StyleAlessandro Borghese, Michele Riccio, Asad Fayyaz, Alberto Castellazzi, Luca Maresca, Giovanni Breglio, Andrea Irace. Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2019; 7 (3):1527-1538.
Chicago/Turabian StyleAlessandro Borghese; Michele Riccio; Asad Fayyaz; Alberto Castellazzi; Luca Maresca; Giovanni Breglio; Andrea Irace. 2019. "Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs." IEEE Journal of Emerging and Selected Topics in Power Electronics 7, no. 3: 1527-1538.
This paper presents a comprehensive investigation on the self-sustained oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-sustained oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-sustained oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-sustained oscillation are obtained. The analyses reveal the oscillatory criteria of the self-sustained oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the oscillation. The proposed oscillation suppression methods are validated by the experiment at the end of the paper.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies 2019, 12, 2211 .
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies. 2019; 12 (11):2211.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention." Energies 12, no. 11: 2211.
This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-sustained oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-sustained oscillation is reproduced. The simulation results reveal the root cause of the self-sustained oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate-source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-sustained oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the oscillation are presented.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode. IEEE Transactions on Electron Devices 2018, 66, 605 -612.
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode. IEEE Transactions on Electron Devices. 2018; 66 (1):605-612.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2018. "Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode." IEEE Transactions on Electron Devices 66, no. 1: 605-612.
This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on a set of 20 MOSFETs. In order to assess the effects of parameters spread in a real operating condition, the electrothermal simulation of a 200kHz synchronous buck converter is performed. Subsequently, an investigation of the switching energy unbalance, as a function of parameters distribution tolerances, is achieved through several sets of Monte Carlo electrothermal simulations. The results aim at aiding both the design of multi-chip configurations and the selection of appropriate fabrication process rejection boundaries.
Alessandro Borghese; Michele Riccio; Asad Fayyaz; Alberto Castellazzi; Luca Maresca; Giovanni Breglio; Andrea Irace. Effect of Parameters Variability on the Performance of SiC MOSFET Modules. 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) 2018, 1 -5.
AMA StyleAlessandro Borghese, Michele Riccio, Asad Fayyaz, Alberto Castellazzi, Luca Maresca, Giovanni Breglio, Andrea Irace. Effect of Parameters Variability on the Performance of SiC MOSFET Modules. 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC). 2018; ():1-5.
Chicago/Turabian StyleAlessandro Borghese; Michele Riccio; Asad Fayyaz; Alberto Castellazzi; Luca Maresca; Giovanni Breglio; Andrea Irace. 2018. "Effect of Parameters Variability on the Performance of SiC MOSFET Modules." 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) , no. : 1-5.
In this paper we present an effective simulation strategy to analyze the behavior of power semiconductor devices during high electro-thermal stress events. This technique can enable device designers and circuit engineers to foresee the device behavior during stressful events in order to assess eventual reliability issues or lifespan reduction.
Giovanni Breglio; Andrea Irace; Luca Maresca; Michele Riccio. Electro-thermal Simulations of Power Semiconductor Devices during High Stress Events. 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) 2018, 1 -4.
AMA StyleGiovanni Breglio, Andrea Irace, Luca Maresca, Michele Riccio. Electro-thermal Simulations of Power Semiconductor Devices during High Stress Events. 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC). 2018; ():1-4.
Chicago/Turabian StyleGiovanni Breglio; Andrea Irace; Luca Maresca; Michele Riccio. 2018. "Electro-thermal Simulations of Power Semiconductor Devices during High Stress Events." 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) , no. : 1-4.
Intelligent tires constitute one of the approaches that allow to increase the effectiveness of the active safety systems of vehicles. Several areas of improvement concern these systems, all of them focused on the information about tire-road states. This study introduces the use of cost-effective flex sensor technology in intelligent tires in order to estimate the tread rotational speed and the vertical load. This technology has been combined with a wireless data transmission and a suitable prototype has been realized. First experimental tests have been conducted and the obtained results show the goodness of the proposed solution.
Giovanni Breglio; Andrea Irace; Lorenzo Pugliese; Michele Riccio; Michele Russo; Salvatore Strano; Mario Terzo. Cost-Effective Wireless Sensing System for an Intelligent Pneumatic Tire. Mechanical Engineering and Materials 2018, 158 -164.
AMA StyleGiovanni Breglio, Andrea Irace, Lorenzo Pugliese, Michele Riccio, Michele Russo, Salvatore Strano, Mario Terzo. Cost-Effective Wireless Sensing System for an Intelligent Pneumatic Tire. Mechanical Engineering and Materials. 2018; ():158-164.
Chicago/Turabian StyleGiovanni Breglio; Andrea Irace; Lorenzo Pugliese; Michele Riccio; Michele Russo; Salvatore Strano; Mario Terzo. 2018. "Cost-Effective Wireless Sensing System for an Intelligent Pneumatic Tire." Mechanical Engineering and Materials , no. : 158-164.
The high aspect ratio and the porous nature of spatially oriented forest‐like carbon nanotube (CNT) structures represent a unique opportunity to engineer a novel class of nanoscale assemblies. By combining CNTs and conformal coatings, a 3D lightweight scaffold with tailored behavior can be achieved. The effect of nanoscale coatings, aluminum oxide (Al2O3) and nonstoichiometric amorphous silicon carbide (a‐SiC), on the thermal transport efficiency of high aspect ratio vertically aligned CNTs, is reported herein. The thermal performance of the CNT‐based nanostructure strongly depends on the achieved porosity, the coating material and its infiltration within the nanotube network. An unprecedented enhancement in terms of effective thermal conductivity in a‐SiC coated CNTs has been obtained: 181% compared to the as‐grown CNTs and Al2O3 coated CNTs. Furthermore, the integration of coated high aspect ratio CNTs in an epoxy molding compound demonstrates that, next to the required thermal conductivity, the mechanical compliance for thermal interface applications can also be achieved through coating infiltration into foam‐like CNT forests.
Cinzia Silvestri; Michele Riccio; Rene H. Poelma; Aleksandar Jović; Bruno Morana; Sten Vollebregt; Andrea Irace; Guo Qi Zhang; Pasqualina M. Sarro. Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubes. Small 2018, 14, 1 .
AMA StyleCinzia Silvestri, Michele Riccio, Rene H. Poelma, Aleksandar Jović, Bruno Morana, Sten Vollebregt, Andrea Irace, Guo Qi Zhang, Pasqualina M. Sarro. Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubes. Small. 2018; 14 (20):1.
Chicago/Turabian StyleCinzia Silvestri; Michele Riccio; Rene H. Poelma; Aleksandar Jović; Bruno Morana; Sten Vollebregt; Andrea Irace; Guo Qi Zhang; Pasqualina M. Sarro. 2018. "Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubes." Small 14, no. 20: 1.
Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered immune to electrostatic discharge (ESD) failures, since usually they withstand an avalanche energy one order of magnitude higher than that of the ESD. Consequently, few works consider this aspect. However, it was observed that during the mounting of power diodes in automotive systems (e.g., with operators touching and handling the devices), ESD events occur and devices fail. In this paper the ESD capability of 600 V fast recovery epitaxial diode (FRED) is analyzed by means of Technology Computer-Aided Design (TCAD) simulations, theoretical analyses and experimental characterization. Two doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The proposed design exhibits a higher ESD robustness and this is due to its superior capability in keeping the current distribution uniform in the structure in a critical condition such as the impact ionization avalanche effect. Both experimental and numerical results validate the proposed design.
Luca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies 2018, 11, 832 .
AMA StyleLuca Maresca, Giuseppe De Caro, Gianpaolo Romano, Michele Riccio, Giovanni Breglio, Andrea Irace, Laura Bellemo, Rossano Carta, Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies. 2018; 11 (4):832.
Chicago/Turabian StyleLuca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. 2018. "Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes." Energies 11, no. 4: 832.
This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The model describes the static and dynamic behavior and accounts for leakage current and impact ionization. The technology-dependent MOSFET parameters are extracted from characterization measurements and datasheets. SPICE standard components and analog behavior modeling blocks are adopted for the model implementation. The model ensures a good agreement with experimental data over a wide temperature range, even under out-of-safe-operating-area conditions close to the failure occurrence.
Michele Riccio; Vincenzo D Alessandro; Gianpaolo Romano; Luca Maresca; Giovanni Breglio; Andrea Irace. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations. IEEE Transactions on Power Electronics 2017, 33, 8020 -8029.
AMA StyleMichele Riccio, Vincenzo D Alessandro, Gianpaolo Romano, Luca Maresca, Giovanni Breglio, Andrea Irace. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations. IEEE Transactions on Power Electronics. 2017; 33 (9):8020-8029.
Chicago/Turabian StyleMichele Riccio; Vincenzo D Alessandro; Gianpaolo Romano; Luca Maresca; Giovanni Breglio; Andrea Irace. 2017. "A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations." IEEE Transactions on Power Electronics 33, no. 9: 8020-8029.
Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements.
Alberto Castellazzi; Asad Fayyaz; Gianpaolo Romano; Michele Riccio; Andrea Irace; Jesus Urresti; Nicholas Wright. Transient out-of-SOA robustness of SiC power MOSFETs. 2017 IEEE International Reliability Physics Symposium (IRPS) 2017, 2A-3.1 -2A-3.8.
AMA StyleAlberto Castellazzi, Asad Fayyaz, Gianpaolo Romano, Michele Riccio, Andrea Irace, Jesus Urresti, Nicholas Wright. Transient out-of-SOA robustness of SiC power MOSFETs. 2017 IEEE International Reliability Physics Symposium (IRPS). 2017; ():2A-3.1-2A-3.8.
Chicago/Turabian StyleAlberto Castellazzi; Asad Fayyaz; Gianpaolo Romano; Michele Riccio; Andrea Irace; Jesus Urresti; Nicholas Wright. 2017. "Transient out-of-SOA robustness of SiC power MOSFETs." 2017 IEEE International Reliability Physics Symposium (IRPS) , no. : 2A-3.1-2A-3.8.
This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.
Asad Fayyaz; Gianpaolo Romano; Jesus Urresti; Michele Riccio; Alberto Castellazzi; Andrea Irace; Nick Wright. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies 2017, 10, 452 .
AMA StyleAsad Fayyaz, Gianpaolo Romano, Jesus Urresti, Michele Riccio, Alberto Castellazzi, Andrea Irace, Nick Wright. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies. 2017; 10 (4):452.
Chicago/Turabian StyleAsad Fayyaz; Gianpaolo Romano; Jesus Urresti; Michele Riccio; Alberto Castellazzi; Andrea Irace; Nick Wright. 2017. "A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs." Energies 10, no. 4: 452.
This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study.
Asad Fayyaz; Alberto Castellazzi; Gianpaolo Romano; Michele Riccio; Andrea Irace; Jesus Urresti; Nicholas Wright. UIS failure mechanism of SiC power MOSFETs. 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2016, 118 -122.
AMA StyleAsad Fayyaz, Alberto Castellazzi, Gianpaolo Romano, Michele Riccio, Andrea Irace, Jesus Urresti, Nicholas Wright. UIS failure mechanism of SiC power MOSFETs. 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2016; ():118-122.
Chicago/Turabian StyleAsad Fayyaz; Alberto Castellazzi; Gianpaolo Romano; Michele Riccio; Andrea Irace; Jesus Urresti; Nicholas Wright. 2016. "UIS failure mechanism of SiC power MOSFETs." 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , no. : 118-122.