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Gianpaolo Romano
Department of Electrical Engineering and Information technologies, University of Naples “Federico II”, Via Claudio 21, 80125 Napoli, Italy

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Journal article
Published: 04 April 2018 in Energies
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Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered immune to electrostatic discharge (ESD) failures, since usually they withstand an avalanche energy one order of magnitude higher than that of the ESD. Consequently, few works consider this aspect. However, it was observed that during the mounting of power diodes in automotive systems (e.g., with operators touching and handling the devices), ESD events occur and devices fail. In this paper the ESD capability of 600 V fast recovery epitaxial diode (FRED) is analyzed by means of Technology Computer-Aided Design (TCAD) simulations, theoretical analyses and experimental characterization. Two doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The proposed design exhibits a higher ESD robustness and this is due to its superior capability in keeping the current distribution uniform in the structure in a critical condition such as the impact ionization avalanche effect. Both experimental and numerical results validate the proposed design.

ACS Style

Luca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies 2018, 11, 832 .

AMA Style

Luca Maresca, Giuseppe De Caro, Gianpaolo Romano, Michele Riccio, Giovanni Breglio, Andrea Irace, Laura Bellemo, Rossano Carta, Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies. 2018; 11 (4):832.

Chicago/Turabian Style

Luca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. 2018. "Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes." Energies 11, no. 4: 832.

Journal article
Published: 17 November 2017 in IEEE Transactions on Power Electronics
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This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The model describes the static and dynamic behavior and accounts for leakage current and impact ionization. The technology-dependent MOSFET parameters are extracted from characterization measurements and datasheets. SPICE standard components and analog behavior modeling blocks are adopted for the model implementation. The model ensures a good agreement with experimental data over a wide temperature range, even under out-of-safe-operating-area conditions close to the failure occurrence.

ACS Style

Michele Riccio; Vincenzo D Alessandro; Gianpaolo Romano; Luca Maresca; Giovanni Breglio; Andrea Irace. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations. IEEE Transactions on Power Electronics 2017, 33, 8020 -8029.

AMA Style

Michele Riccio, Vincenzo D Alessandro, Gianpaolo Romano, Luca Maresca, Giovanni Breglio, Andrea Irace. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations. IEEE Transactions on Power Electronics. 2017; 33 (9):8020-8029.

Chicago/Turabian Style

Michele Riccio; Vincenzo D Alessandro; Gianpaolo Romano; Luca Maresca; Giovanni Breglio; Andrea Irace. 2017. "A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations." IEEE Transactions on Power Electronics 33, no. 9: 8020-8029.

Journal article
Published: 01 April 2017 in Energies
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This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.

ACS Style

Asad Fayyaz; Gianpaolo Romano; Jesus Urresti; Michele Riccio; Alberto Castellazzi; Andrea Irace; Nick Wright. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies 2017, 10, 452 .

AMA Style

Asad Fayyaz, Gianpaolo Romano, Jesus Urresti, Michele Riccio, Alberto Castellazzi, Andrea Irace, Nick Wright. A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs. Energies. 2017; 10 (4):452.

Chicago/Turabian Style

Asad Fayyaz; Gianpaolo Romano; Jesus Urresti; Michele Riccio; Alberto Castellazzi; Andrea Irace; Nick Wright. 2017. "A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs." Energies 10, no. 4: 452.

Conference paper
Published: 01 November 2016 in 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study.

ACS Style

Asad Fayyaz; Alberto Castellazzi; Gianpaolo Romano; Michele Riccio; Andrea Irace; Jesus Urresti; Nicholas Wright. UIS failure mechanism of SiC power MOSFETs. 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2016, 118 -122.

AMA Style

Asad Fayyaz, Alberto Castellazzi, Gianpaolo Romano, Michele Riccio, Andrea Irace, Jesus Urresti, Nicholas Wright. UIS failure mechanism of SiC power MOSFETs. 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2016; ():118-122.

Chicago/Turabian Style

Asad Fayyaz; Alberto Castellazzi; Gianpaolo Romano; Michele Riccio; Andrea Irace; Jesus Urresti; Nicholas Wright. 2016. "UIS failure mechanism of SiC power MOSFETs." 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , no. : 118-122.

Journal article
Published: 04 May 2016 in IEEE Journal of Emerging and Selected Topics in Power Electronics
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The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated in this paper. Two different SC failure phenomena for SiC power MOSFETs are thoroughly reported. Experimental evidence and TCAD electrothermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations and are reported along with their effects on devices' SC capability.

ACS Style

Gianpaolo Romano; Asad Fayyaz; Michele Riccio; Luca Maresca; Giovanni Breglio; Alberto Castellazzi; Andrea Irace. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics 2016, 4, 978 -987.

AMA Style

Gianpaolo Romano, Asad Fayyaz, Michele Riccio, Luca Maresca, Giovanni Breglio, Alberto Castellazzi, Andrea Irace. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 2016; 4 (3):978-987.

Chicago/Turabian Style

Gianpaolo Romano; Asad Fayyaz; Michele Riccio; Luca Maresca; Giovanni Breglio; Alberto Castellazzi; Andrea Irace. 2016. "A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs." IEEE Journal of Emerging and Selected Topics in Power Electronics 4, no. 3: 978-987.

Journal article
Published: 01 January 2015 in Facta universitatis - series: Electronics and Energetics
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The aim of this paper is to give a presentation of the principal applications of Infrared Thermography for analysis and testing of electrondevices. Even though experimental characterization could be carried out on almost any electronic devices and circuits, here IR Thermography for investigation of power semiconductor devices is presented. Different examples of functional and failure analysis in both transient and lock-in modes will be reported.

ACS Style

Giovanni Breglio; Andrea Irace; Luca Maresca; Michele Riccio; Gianpaolo Romano; Paolo Spirito. Infrared Thermography applied to power electron devices investigation. Facta universitatis - series: Electronics and Energetics 2015, 28, 205 -212.

AMA Style

Giovanni Breglio, Andrea Irace, Luca Maresca, Michele Riccio, Gianpaolo Romano, Paolo Spirito. Infrared Thermography applied to power electron devices investigation. Facta universitatis - series: Electronics and Energetics. 2015; 28 (2):205-212.

Chicago/Turabian Style

Giovanni Breglio; Andrea Irace; Luca Maresca; Michele Riccio; Gianpaolo Romano; Paolo Spirito. 2015. "Infrared Thermography applied to power electron devices investigation." Facta universitatis - series: Electronics and Energetics 28, no. 2: 205-212.