The morphology of the tracks of swift ions revealed in amorphous silicon nitride after treatment in an HF solution is studied. The Si₃N₄/Si structures were irradiated with Fe, Kr, and W ions in the electron energy loss regime. Discontinuous tracks were recorded upon exposure to W only, with an electron energy loss of 20.4 keV nm⁻¹ being maximal for the conditions of our experiment. The results from calculations of the track formation in Si₃N₄ based on the thermal spike model are presented.