Vertically aligned CNTs exhibit 100× and 170× higher capacitance when coated with ALD RuO_x and after further electrochemical oxidation, respectively.

One of the most common failures or breakdowns that can occur in high-voltage (HV) equipment is due to partial discharges (PDs). This occurs as a result of inadequate insulation, aging, harsh environmental effects, or manufacturing flaws. PD detection and recognition methods have gained growing attention and have seen great progress in the past decades. Radiometric methods are one of the most investigated detection approaches due to their immunity to electromagnetic interference (EMI) and their capabilities to detect and locate PD activities in different applications such as transformers, cables, etc. Several review articles have been published to classify and categorize these works. Nonetheless, some concepts are missing, and some improvement techniques, such as PD detection at high-frequency (HF) and very high-frequency (VHF), have been overlooked. We present in this paper an exhaustive review study of state-of-the-art PD detection based on radiometric methods at different usable radiofrequency bands (i.e., HF, VHF, and UHF). Accordingly, we propose a new generic categorization approach based on the detected electromagnetic wave component (magnetic or electric fields) and pick-up location, either from free space or ground cable.

In this paper, a pioneer partial discharge (PD) loop antenna sensor is presented and examined. It is made of a 70-turn square planar inductor with a side length of 1.8 mm, which is fabricated on top of a silicon substrate in complementary metal oxide semiconductor technology. The microsensor ability to detect corona PD is demonstrated once connected in series with a 60 dB gain amplifier. The behavior is studied at different separation distances from the line through which the PD pulses flow. At 5 cm away, a damped sinusoidal induced voltage with an amplitude of about 100 mV has been measured. The output signal spectrum is highly concentrated around a central resonance frequency of ∼5 MHz. The microsensor response is compared with those of other industrial sensors from Techimp, i.e., horn antennas and high-frequency current transformer sensors. The presented on-chip sensor can be considered a non-intrusive competing solution compared with other heavy and expensive commercial sensors due to its lightweight, compact size, and low cost. In addition, it shows an acceptable signal to noise ratio compared with other commercial electromagnetic wave-based sensors.