In this paper, a novel, hybrid-integrated, high-precision, vacuum microelectronic accelerometer is put forward, based on the theory of field emission; the accelerometer consists of a sensitive structure and an ASIC interface (application-specific integrated circuit). The sensitive structure has a cathode cone tip array, a folded beam, an emitter electrode, and a feedback electrode. The sensor is fabricated on a double-sided polished (1 0 0) N-type silicon wafer; the tip array of the cathode is shaped by wet etching with HNA (HNO₃, HF, and CH₃COOH) and metalized by TiW/Au thin film. The structure of the sensor is finally released by the ICP (inductively coupled plasma) process. The ASIC interface was designed and fabricated based on the P-JFET (Positive-Junction Field Effect Transistor) high-voltage bipolar process. The accelerometer was tested through a static field rollover test, and the test results show that the hybrid-integrated vacuum microelectronic accelerometer has good performance, with a sensitivity of 3.081 V/g, the non-linearity is 0.84% in the measuring range of −1 g~1 g, the average noise spectrum density value is 36.7 μV/ $\sqrt{\mathrm{Hz}}$ in the frequency range of 0–200 Hz, the resolution of the vacuum microelectronic accelerometer can reach 1.1 × 10⁻⁵ g, and the zero stability reaches 0.18 mg in 24 h.

Based on the scanning grating mirror we developed, this paper presents a method of the precise control of a scanning grating mirror and of high-speed spectrum data detection. In addition, the system circuit of the scanning grating mirror control and spectrum signal detecting is designed and manufactured in this paper. The mirror control system includes a drive generator module, an amplitude detection module, a feedback control module, and a variable gain amplification (VGA) module; the detecting system includes a field programmable gate array (FPGA) main control module, a synchronous trigger module, an analog-digital conversion (ADC) module, and a universal serial bus (USB) interface module. The final results of the experiment show that the control system has successfully realized the precision control of the swing of the scanning grating mirror and that the detecting system has successfully realized the high-speed acquisition and transmission of the spectral signal and the angle signals. The spectrum has been reconstructed according to the mathematical relationship between the wavelength λ and the angle β of the mirror. The resolution of the spectrometer reaches 10 nm in the wavelength range of 800–1800 nm, the signal-to-noise ratio (SNR) of the spectrometer is 4562 at full scale, the spectrum data drift is 0.9% in 24 h, and the precision of the closed loop control is 0.06%.

Based on the scanning grating mirror developed by us, this paper presents a method for precise control of the scanning grating mirror and high-speed spectrum data acquisition. In addition, a system circuit of the scanning grating mirror control and a spectrum signal acquisition system were designed and manufactured. The final results of the experiment show that the control system successfully allowed the precise control of the swing of the scanning grating mirror and the acquisition system successfully carried out the high-speed acquisition and transmission of the spectrum and angle data. The spectrum detection range of the NIR spectrometer was 80–2532 nm. The overall resolution of the spectrum was better than 12 nm.

In this study, we propose a novel asymmetric high-performance MEMS pendulum accelerometer comprising a sensitive structure and an interface circuit. The sensitive structure, designed with asymmetric mass blocks, significantly improves both sensitivity and structural stability. The sensor is fabricated using a double-side polished (100) N-type silicon wafer and its structure is ultimately realized through ICP (Inductively Coupled Plasma) etching. We also develop and fabricate the corresponding interface circuit. The accelerometer is evaluated through a static field roll-over test, demonstrating excellent performance with a sensitivity of 1.247 V/g and a nonlinearity of 0.8% within the measurement range of −2 g to 2 g.

In this paper, a novel integrated high precision vacuum microelectronic accelerometer is put forward based on the theory of field emission, the accelerometer consists of sensitive structure and interface ASIC. The sensitive structure has a mass of a cathode cone tips array, a folded beam, an emitter electrode and a feedback electrode. The sensor is fabricated on a double side polished (1 0 0) N-type silicon wafer, the tips array of cathode are shaped by wet etching with HNA (HNO3, HF and CH3COOH) and metalized by TiW/Au thin film. The structure of sensor is released by ICP process finally. The interface ASIC was designed and fabricated based on the P-JFET high voltage bipolar process. The accelerometer is tested through static field rollover test, and the test results show the integrated vacuum microelectronic accelerometer has good performances, which sensitivity is 3.081V/g and non-linearity is 0.84% in the measuring range of −1g~1g.