Spyridon Vlassis

Prof. Dr. Spyridon Vlassis

Electronics Laboratory, Department of Physics, University of Patras, 26504 Patras, Greece

Research Focus & Metrics

Academic Career Length

25Years (2002-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 November 2009 in Analog Integrated Circuits and Signal Processing
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GRGeorge Raikos
George Raikos
Spyridon VlassisSpyridon Vlassis
Spyridon Vlassis

18 June 2013 in Circuits, Systems, and Signal Processing
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Fabian KhatebFabian Khateb
Fabian Khateb
Montree KumngernMontree Kumngern
Montree Kumngern
Spyridon VlassisSpyridon Vlassis
Spyridon Vlassis
Costas PsychalinosCostas Psychalinos
Costas Psychalinos

10 May 2012 in Analog Integrated Circuits and Signal Processing
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Journal Article
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Spyridon VlassisSpyridon Vlassis
Spyridon Vlassis

24 December 2014 in Circuits, Systems, and Signal Processing
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Journal Article
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Fabian KhatebFabian Khateb
Fabian Khateb
Spyridon VlassisSpyridon Vlassis
Spyridon Vlassis
Montree KumngernMontree Kumngern
Montree Kumngern
Costas PsychalinosCostas Psychalinos
Costas Psychalinos
TKTomasz Kulej
Tomasz Kulej
LFLukas Fujcik
Lukas Fujcik

14 March 2022 in Electronics
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OPOrfeas Panetas-Felouris
Orfeas Panetas-Felouris
Spyridon VlassisSpyridon Vlassis
Spyridon Vlassis
This paper presents the hardware implementation of a 3rd-order low-pass finite impulse response (FIR) filter based on time-mode signal processing circuits. The filter topology consists of a set of novel building blocks that perform the necessary functions in time-mode including z−1 operation, time addition and time multiplication. The proposed time-mode low-pass FIR filter was designed in a 28 nm Samsung fully-depleted silicon-on-insulator FD-SOI process under 1 V supply voltage with 5 MHz sampling frequency. Simulation results validate the theoretical analysis. The FIR filter achieves a signal-to-noise-plus-distortion ratio (SNDR) of 38.6 dB at the input frequency of 50 KHz consuming around 200 μW.

Verified
Journal Article
Open access
PDF file
OPOrfeas Panetas-Felouris
Orfeas Panetas-Felouris
Spyridon VlassisSpyridon Vlassis
Spyridon Vlassis
This paper presents a novel circuit of a z−1 operation which is suitable, as a basic building block, for time-domain topologies and signal processing. The proposed circuit employs a time register circuit which is based on the capacitor discharging method. The large variation of the capacitor discharging slope over technology process and chip temperature variations which affect the z−1 accuracy is improved using a novel digital calibration loop. The circuit is designed using a 28 nm Samsung FD-SOI process under 1 V supply voltage with 5 MHz sampling frequency. Simulation results validate the theoretical analysis presenting a variation of capacitor voltage discharging slope less than 5% over worst-case process corners for temperature between 0 °C and 100 °C while consuming only 30 μA. Also, the worst-case accuracy of z−1 operation is better than 33 ps for input pulse widths between 5 ns and 45 ns presenting huge improvement compared with the uncalibrated operator.