Ga₂O₃ has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of β-Ga₂O₃-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga₂O₃ may well be promising to lead power electronics.

In this work, a metal–semiconductor–metal (MSM) $\beta $ -gallium oxide (Ga2O3) photodetector (PD) was constructed by microprocessing techniques, including UV photolithography, liftoff, and ion beam sputtering. The $\beta $ -Ga2O3 thin film was deposited on a sapphire substrate by a metalorganic chemical vapor deposition method. In addition to the high-quality thin film, the PD showed a photo-to-dark current ratio of $3.5\,\,{\times }\,\,10$ 7, a photoresponsivity of 509.78 A/W, a specific detectivity of $8.79\,\,{\times }\,\,10$ 14 Jones, an external quantum efficiency (EQE) of $2.5\,\,{\times }\,\,10$ 5%, and a linear dynamic range of 94.41 dB at 10 V with 254-nm UV light illumination. The PD photoconductive gain decreases with the incident light intensity and reaches up to 2490 under $2000 ~\mu \text{W}$ cm−2. Such high photoconductive gain due to recycling transport in the active layer may lead to persistent photocurrent. Together with high photoresponsivity and EQE, the substantial internal gain may well exist in the $\beta $ -Ga2O3 PD, suggesting a high deep-ultraviolet photoresponse for the $\beta $ -Ga2O3 MSM photodetector in this article.

The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an alternative to expensive technology computer-aided design (TCAD) simulation. In this work, we propose the first breakdown performance prediction framework, PowerNet, for SOI lateral power devices, based on deep learning methods. The framework can provide breakdown location prediction and breakdown voltage (BV) prediction by utilizing a two-stage machine learning method. In addition, it demonstrates 97.67% accuracy on breakdown location prediction and less than 4% average error on the BV prediction compared with TCAD simulation. The proposed method can be used to measure changes in performance caused by random variability in structural parameters during manufacturing process, allowing designers to avoid unstable structural parameters and enhance design robustness. More importantly, it can significantly reduce the computational cost when compared with the TCAD simulation. We believe the proposed machine learning technique can significantly speedup the design space exploration for power devices, eventually reducing the overall product-to-market time.

In this letter, an improved Ga ₂ O ₃ solar-blind photodetector is introduced. Using the Ga ₂ O ₃ thin film grown by metalorganic chemical vapor deposition, the localized surface plasmon resonance enhanced solar-blind photo-response is discussed in view of light absorbance and carrier injection. By introducing Pt nanoparticles to decorate the Ga ₂ O ₃ photodetector, the responsivity, detectivity, and external quantum efficiency are increased from 0.13 A/W, 4.8×10 ¹¹ Jones and 65% to 4.49 A/W, 8.66×10 ¹² Jones and 2196%, respectively. Basically, optimal Pt nanoparticles could resonance with Ga ₂ O ₃ at around 250 nm light irradiation, exciting the excess electrons to inject into the Ga ₂ O ₃ thin film; during this process, the photon absorbance and effective carrier injection render the enhancement of detector, so long as the photon energy could generate the electron-hole pairs; due to the light-induced non-equilibrium state. Meanwhile, the absorbance peak resonance enhanced the interaction between photons and Ga ₂ O ₃ . As an effective pathway to boost solar-blind photodetector, this work provides a simple and feasible route to improve the photo-response based on wide bandgap semiconductor Ga ₂ O ₃ .

In this work, a 16×16 Ga ₂ O ₃ photodetector array is introduced. The Ga ₂ O ₃ thin film was deposited on c -sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of 8×10 ³ indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W ^-1 , specific detectivity of 2.2×10 ¹⁴ cm √ Hz W ^-1 (Jones), external quantum efficiency of 3×104%, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.

Ga₂O₃-based photodetectors are promising for deep ultraviolet (DUV) detection owing to the relatively large bandgap (>4.5 eV) of Ga₂O₃. High-temperature applications, such as flame detection and aerospace have been a major challenge to the reliability of electronic devices including photodetectors. All-oxide electronic devices have great potential for applications that require high thermal stability. Therefore, we constructed an all-oxide self-powered DUV photodetector based on ϵ-Ga₂O₃/ZnO heterojunction and examined its ruggedness in a high-temperature environment up to 600 K. A photocurrent of up to 0.3 μA and a photo-to-dark current ratio of ∼8000 were observed at room temperature. In addition, the ϵ-Ga₂O₃/ZnO heterojunction remained functional even at an ambient temperature of 600 K. It was also found that sensing performance including photo-to-dark current ratio (PDCR), responsivity, detectivity, and external quantum efficiency degraded as the temperature increased. Detailed generation/recombination processes, as well as carrier transport, were explored to reveal physical insights. The thermal stability of the ϵ-Ga₂O₃/ZnO photodetector is thus examined, which would provide the basis for further development.