Prof. Dr. Yufeng Guo

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Academic Career Length

21Years (2006-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

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16 March 2022 in Crystals

Journal Article

β-Ga₂O₃-Based Power Devices: A Concise Review

Ga₂O₃ has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of β-Ga₂O₃-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga₂O₃ may well be promising to lead power electronics.

5 August 2022 in IEEE Transactions on Electron Devices

Journal Article

Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga₂O₃Deep-Ultraviolet Photodetector

Zeng Liu

Ling Du

Shao-Hui Zhang

Lei Li

Zhao-Ying Xi

Weihua Tang

In this work, a metal–semiconductor–metal (MSM) $\beta $ -gallium oxide (Ga2O3) photodetector (PD) was constructed by microprocessing techniques, including UV photolithography, liftoff, and ion beam sputtering. The $\beta $ -Ga2O3 thin film was deposited on a sapphire substrate by a metalorganic chemical vapor deposition method. In addition to the high-quality thin film, the PD showed a photo-to-dark current ratio of $3.5\,\,{\times }\,\,10$ 7, a photoresponsivity of 509.78 A/W, a specific detectivity of $8.79\,\,{\times }\,\,10$ 14 Jones, an external quantum efficiency (EQE) of $2.5\,\,{\times }\,\,10$ 5%, and a linear dynamic range of 94.41 dB at 10 V with 254-nm UV light illumination. The PD photoconductive gain decreases with the incident light intensity and reaches up to 2490 under $2000 ~\mu \text{W}$ cm−2. Such high photoconductive gain due to recycling transport in the active layer may lead to persistent photocurrent. Together with high photoresponsivity and EQE, the substantial internal gain may well exist in the $\beta $ -Ga2O3 PD, suggesting a high deep-ultraviolet photoresponse for the $\beta $ -Ga2O3 MSM photodetector in this article.

18 July 2024 in Sensors

Journal Article

Flexible Sensors Based on Conductive Polymer Composites

Elastic polymer-based conductive composites (EPCCs) are of great potential in the field of flexible sensors due to the advantages of designable functionality and thermal and chemical stability. As one of the popular choices for sensor electrodes and sensitive materials, considerable progress in EPCCs used in sensors has been made in recent years. In this review, we introduce the types and the conductive mechanisms of EPCCs. Furthermore, the recent advances in the application of EPCCs to sensors are also summarized. This review will provide guidance for the design and optimization of EPCCs and offer more possibilities for the development and application of flexible sensors.

3 February 2020 in IEEE Access

Journal Article

Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks

Jing chen

Mohamed Baker Alawieh

The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an alternative to expensive technology computer-aided design (TCAD) simulation. In this work, we propose the first breakdown performance prediction framework, PowerNet, for SOI lateral power devices, based on deep learning methods. The framework can provide breakdown location prediction and breakdown voltage (BV) prediction by utilizing a two-stage machine learning method. In addition, it demonstrates 97.67% accuracy on breakdown location prediction and less than 4% average error on the BV prediction compared with TCAD simulation. The proposed method can be used to measure changes in performance caused by random variability in structural parameters during manufacturing process, allowing designers to avoid unstable structural parameters and enhance design robustness. More importantly, it can significantly reduce the computational cost when compared with the TCAD simulation. We believe the proposed machine learning technique can significantly speedup the design space exploration for power devices, eventually reducing the overall product-to-market time.

23 September 2019 in Advanced Functional Materials

Journal Article

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Yong Xu

Yun Li

Songlin Li

Francis Balestra

Gerard Ghibaudo

Yong‐Young Noh

20 June 2023 in IEEE Electron Device Letters

Journal Article

Boosting β-Ga₂O₃ Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance

Zeng Liu

Shu-Lin Sha

Gao-Hui Shen

Ming-Ming Jiang

Maolin Zhang

Weihua Tang

In this letter, an improved Ga ₂ O ₃ solar-blind photodetector is introduced. Using the Ga ₂ O ₃ thin film grown by metalorganic chemical vapor deposition, the localized surface plasmon resonance enhanced solar-blind photo-response is discussed in view of light absorbance and carrier injection. By introducing Pt nanoparticles to decorate the Ga ₂ O ₃ photodetector, the responsivity, detectivity, and external quantum efficiency are increased from 0.13 A/W, 4.8×10 ¹¹ Jones and 65% to 4.49 A/W, 8.66×10 ¹² Jones and 2196%, respectively. Basically, optimal Pt nanoparticles could resonance with Ga ₂ O ₃ at around 250 nm light irradiation, exciting the excess electrons to inject into the Ga ₂ O ₃ thin film; during this process, the photon absorbance and effective carrier injection render the enhancement of detector, so long as the photon energy could generate the electron-hole pairs; due to the light-induced non-equilibrium state. Meanwhile, the absorbance peak resonance enhanced the interaction between photons and Ga ₂ O ₃ . As an effective pathway to boost solar-blind photodetector, this work provides a simple and feasible route to improve the photo-response based on wide bandgap semiconductor Ga ₂ O ₃ .

About Me

Professor Guo Yufeng is the Secretary of the Communist Party of China (CPC) at Nanjing University of Posts and Telecommunications. He serves as the Executive Deputy Director of the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Director of the National Experimental Teaching Demonstration Center for Electronic Science and Technology, and Director of the National Virtual Simulation Experimental Teaching Center for Information Electronic Technology. He is a leading talent in the National High-Level Personnel of Special Support Program, a member of IEEE, a senior member of the Chinese Institute of Electronics, and the Deputy Director of the Education Working Committee of the Chinese Institute of Electronics. Additionally, he holds the position of Vice Chairman of the Jiangsu Provincial Institute of Electronics and Vice Chairman of the Jiangsu Provincial Society of Integrated Circuits. Professor Guo's research area is power devices and power integration technology, RF integrated circuit design, and intelligent EDA/TCAD tools. As the second principal investigator, he was honored with the Second Prize of the National Teaching Achievement Award. As the first principal investigator, he received the First Prize and Third Prize of the Annual Scientific and Technological Progress Award from the Chinese Institute of Electronics, the Special Prize and First Prize of the Teaching Achievement Award from Jiangsu Province.

Prof. Dr. Yufeng Guo

Prof. Dr. Yufeng Guo

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