GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO_x/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N₂ flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N₂ flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.

The two-state lasing phenomenon, which manifests itself in simultaneous laser emission through several optical transitions of quantum dots, is studied in microdisk diode lasers with different cavity diameters. The active region represents a multiply stacked array of self-organized InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 µm. Two-state lasing, which involves the ground-state and the first excited-state optical transitions, is observed in microdisks with cavity diameters of 20 to 28 µm, whereas two-state lasing via the first and the second excited-state optical transitions is observed in 9 µm microdisks. The threshold currents for one-state and two-state lasing are investigated as functions of the microdisk diameter. Optical loss in the microdisk lasers is evaluated by comparing the two-state lasing behavior of the microdisks with that of edge-emitting stripe lasers made of the same epitaxial wafer.

We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distribution of quantum dots. Meanwhile, two distinct peaks (~1080 and ~1150 nm) at larger wavelengths are found in the spectra of samples with quantum dots overgrown at a low arsenic pressure. We attributed this phenomenon to the high-pressure suppression of atom diffusion between InAs islands at the overgrowth stage, which makes it possible to preserve the initial unimodal size distribution of quantum dots. The same overgrowth of quantum dots at the low arsenic pressure induces intensive mass transfer, which leads to the formation of arrays of quantum dots with larger sizes. Integrated photoluminescence intensity at 300 K is found to be lower for quantum dots overgrown at the higher arsenic pressure. However, a difference in the photoluminescence intensity for the high- and low-pressure overgrowths is not so significant for a temperature of 77 K. This indicates that excess arsenic incorporates into the capping layer at high arsenic pressures and creates numerous nonradiative recombination centers, diminishing the photoluminescence intensity.

One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current density is relatively weak and can be described by a characteristic temperature of about 150 K. At elevated temperatures, a faster (super-exponential) increase in the threshold current density is observed. Meanwhile, the current density corresponding to the onset of two-state lasing was found to decrease with increasing temperature, so that the interval of current density of pure one-state lasing becomes narrower with the temperature increase. Above a certain critical temperature, ground-state lasing completely disappears. This critical temperature drops from 107 to 37 °C as the microdisk diameter decreases from 28 to 20 μm. In microdisks with a diameter of 9 μm, a temperature-induced jump in the lasing wavelength from the first excited-state to second excited-state optical transition is observed. A model describing the system of rate equations and free carrier absorption dependent on the reservoir population provides a satisfactory agreement with experimental results. The temperature and threshold current corresponding to the quenching of ground-state lasing can be well approximated by linear functions of saturated gain and output loss.

In this paper, for the first time, we report a strong effect of the arsenic pressure used for the high-rate GaAs capping of self-assembled InAs quantum dots on their optical properties. A 140 nm red shift of the photoluminescence peak position is observed when the overgrowth arsenic pressure increases threefold. We explain this behavior in terms of different intensities of quantum dot decomposition, which occurs during the overgrowth under different conditions. When the arsenic pressure is sufficiently high, a GaAs capping layer is formed by deposited species with a low impact on initial quantum dots. At a low arsenic pressure, arsenic deficiency leads to the intensive intermixing caused both by the enhanced Ga/In atom exchange and by the consumption of arsenic atoms belonging to quantum dots for the GaAs capping layer formation. As a result of the overgrowth, quantum dots are divided into families with a large (high pressure) and a small (low pressure) average size, yielding long-wave (1.23 µm) and short-wave (1.09 µm) photoluminescence peaks, respectively. Thus, a significant influence of the overgrowth arsenic pressure on the characteristics of InAs quantum dots is evidenced in this study.

The energy consumption of a microdisk laser with InGaAs/GaAs quantum well-dots operating uncooled under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal.