Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical excitation of electron-hole pairs in n-type structures and impurity breakdown in a longitudinal electric field in p-type structures. The emission spectra are obtained. Emission is observed at low temperatures and shown to be determined by optical transitions between impurity states and transitions between the band and impurity states. Upon optical interband pumping, the impurity states are depopulated due to the recombination of electron-hole pairs with the involvement of impurities, while, in an electric field, the impurity states are depopulated due to impact ionization.

We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active region. In particular, we study the effect of microlaser diameter $\mathbf {D}$ variation from 15 to $200~\mu \text{m}$ on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: the blue-shift with decreasing disk size implies an increase in optical losses, although in the case of an ideal cylinder, a noticeable optical loss should appear only at diameters comparable to the wavelength of light. A comparison of the spectral characteristics of microlasers with those of broad-area stripe lasers, for which optical loss can be easily found, gives a tool to evaluate optical loss in microdisk lasers, which was found to be unexpectedly high. It changes $\boldsymbol {\propto }\mathbf {D}^{\mathbf {-1}}$ from $\sim 100$ cm−1 in the smallest microlasers to ~ 5 cm−1 in the largest ones. Several possible physical mechanisms of the appearance of optical losses in microlasers are considered, such as radiative loss due to the curvature of the cylindrical cavity, free carrier absorption, light scattering due to roughness of the side walls, and absorption of light in the near-surface region. The latter type of optical loss was found to be the dominant one and can explain the experimental results once the absorbing layer with a thickness of $2~\mu \text{m}$ was suggested. Using the Gaussian approximation for Using the Gaussian approximation for the gain spectrum, the wavelength-loss relationship was simulated and a good agreement with the experimental dependence was found. The variation of the experimental results on optical loss for nominally identical microlasers was attributed to the variation of the scattering loss. The same reason can explain the scatter of the slope efficiency, which varies from $\sim ~0.03$ to 0.25 W/A being governed by the ratio of the scattering loss to the surface absorption loss.

The two-state lasing phenomenon, which manifests itself in simultaneous laser emission through several optical transitions of quantum dots, is studied in microdisk diode lasers with different cavity diameters. The active region represents a multiply stacked array of self-organized InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 µm. Two-state lasing, which involves the ground-state and the first excited-state optical transitions, is observed in microdisks with cavity diameters of 20 to 28 µm, whereas two-state lasing via the first and the second excited-state optical transitions is observed in 9 µm microdisks. The threshold currents for one-state and two-state lasing are investigated as functions of the microdisk diameter. Optical loss in the microdisk lasers is evaluated by comparing the two-state lasing behavior of the microdisks with that of edge-emitting stripe lasers made of the same epitaxial wafer.