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This paper presents a comprehensive investigation on the self-sustained oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-sustained oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-sustained oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-sustained oscillation are obtained. The analyses reveal the oscillatory criteria of the self-sustained oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the oscillation. The proposed oscillation suppression methods are validated by the experiment at the end of the paper.
Peng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies 2019, 12, 2211 .
AMA StylePeng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies. 2019; 12 (11):2211.
Chicago/Turabian StylePeng Xue; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2019. "Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention." Energies 12, no. 11: 2211.
Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered immune to electrostatic discharge (ESD) failures, since usually they withstand an avalanche energy one order of magnitude higher than that of the ESD. Consequently, few works consider this aspect. However, it was observed that during the mounting of power diodes in automotive systems (e.g., with operators touching and handling the devices), ESD events occur and devices fail. In this paper the ESD capability of 600 V fast recovery epitaxial diode (FRED) is analyzed by means of Technology Computer-Aided Design (TCAD) simulations, theoretical analyses and experimental characterization. Two doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The proposed design exhibits a higher ESD robustness and this is due to its superior capability in keeping the current distribution uniform in the structure in a critical condition such as the impact ionization avalanche effect. Both experimental and numerical results validate the proposed design.
Luca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies 2018, 11, 832 .
AMA StyleLuca Maresca, Giuseppe De Caro, Gianpaolo Romano, Michele Riccio, Giovanni Breglio, Andrea Irace, Laura Bellemo, Rossano Carta, Nabil El Baradai. Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes. Energies. 2018; 11 (4):832.
Chicago/Turabian StyleLuca Maresca; Giuseppe De Caro; Gianpaolo Romano; Michele Riccio; Giovanni Breglio; Andrea Irace; Laura Bellemo; Rossano Carta; Nabil El Baradai. 2018. "Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes." Energies 11, no. 4: 832.
In this paper, the current paths in avalanche conditions of a Floating Field Ring (FFR) termination for a Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) are analyzed. The design of the termination region is achieved with two different optimization techniques, and both static and dynamic electrical behavior are analyzed by means of 2D TCAD simulations, up to high current density levels. A comprehensive analysis of the Unclamped Inductive Switching (UIS) operation of the proposed terminations is carried-out with electro-thermal simulations. Although the behavior of both structures at low current levels is different, results show the same current crowding effect at the main junction for high current levels, resulting in a reduced conduction area of the overall termination, hence, of the avalanche reliability. Finally, experimental confirmation of filamentary current conduction during UIS test are detected on 600 V commercial devices by means of transient infrared thermography. © 2016 Elsevier Ltd. All rights reserved
Paolo Mirone; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. On the avalanche ruggedness of optimized termination structure for 600V punch-through IGBTs. Microelectronics Reliability 2016, 58, 17 -25.
AMA StylePaolo Mirone, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace. On the avalanche ruggedness of optimized termination structure for 600V punch-through IGBTs. Microelectronics Reliability. 2016; 58 ():17-25.
Chicago/Turabian StylePaolo Mirone; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace. 2016. "On the avalanche ruggedness of optimized termination structure for 600V punch-through IGBTs." Microelectronics Reliability 58, no. : 17-25.
In this paper, we investigate the effect of collector design on the onset and the extension of the negative differential resistance (NDR) region that develops in the blocking curves of field-stop (FS) and punch-through (PT) insulated gate bipolar transistors. Differences on the NDR extension and on its temperature behavior for the PT structures with respect to the FS ones are found, and their dependence from the collector design is explained. Subsequently, the dynamic filamentary current conduction mechanism is studied by means of 2-D electrothermal simulations on a wide area structure with many elementary cells on PT and FS devices. The differences between the two structures in terms of filament movement and its influence on the max temperature of the hot spot are then demonstrated to adversely affect the ruggedness of PT devices compared with the FS ones.
Paolo Spirito; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace; Ettore Napoli. Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis Between Punch-Through and Field-Stop Devices. IEEE Transactions on Electron Devices 2015, 62, 2535 -2541.
AMA StylePaolo Spirito, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace, Ettore Napoli. Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis Between Punch-Through and Field-Stop Devices. IEEE Transactions on Electron Devices. 2015; 62 (8):2535-2541.
Chicago/Turabian StylePaolo Spirito; Luca Maresca; Michele Riccio; Giovanni Breglio; Andrea Irace; Ettore Napoli. 2015. "Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis Between Punch-Through and Field-Stop Devices." IEEE Transactions on Electron Devices 62, no. 8: 2535-2541.
The aim of this paper is to give a presentation of the principal applications of Infrared Thermography for analysis and testing of electrondevices. Even though experimental characterization could be carried out on almost any electronic devices and circuits, here IR Thermography for investigation of power semiconductor devices is presented. Different examples of functional and failure analysis in both transient and lock-in modes will be reported.
Giovanni Breglio; Andrea Irace; Luca Maresca; Michele Riccio; Gianpaolo Romano; Paolo Spirito. Infrared Thermography applied to power electron devices investigation. Facta universitatis - series: Electronics and Energetics 2015, 28, 205 -212.
AMA StyleGiovanni Breglio, Andrea Irace, Luca Maresca, Michele Riccio, Gianpaolo Romano, Paolo Spirito. Infrared Thermography applied to power electron devices investigation. Facta universitatis - series: Electronics and Energetics. 2015; 28 (2):205-212.
Chicago/Turabian StyleGiovanni Breglio; Andrea Irace; Luca Maresca; Michele Riccio; Gianpaolo Romano; Paolo Spirito. 2015. "Infrared Thermography applied to power electron devices investigation." Facta universitatis - series: Electronics and Energetics 28, no. 2: 205-212.
In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.
Paolo Spirito; Giovanni Breglio; Andrea Irace; Luca Maresca; Ettore Napoli; Michele Riccio. Physics of the Negative Resistance in the Avalanche $I{-}V$ Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness. IEEE Transactions on Electron Devices 2014, 61, 1457 -1463.
AMA StylePaolo Spirito, Giovanni Breglio, Andrea Irace, Luca Maresca, Ettore Napoli, Michele Riccio. Physics of the Negative Resistance in the Avalanche $I{-}V$ Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness. IEEE Transactions on Electron Devices. 2014; 61 (5):1457-1463.
Chicago/Turabian StylePaolo Spirito; Giovanni Breglio; Andrea Irace; Luca Maresca; Ettore Napoli; Michele Riccio. 2014. "Physics of the Negative Resistance in the Avalanche $I{-}V$ Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness." IEEE Transactions on Electron Devices 61, no. 5: 1457-1463.
TCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests. © © 2013 Elsevier B.V. All rights reserved
Luca Maresca; Giovanni Breglio; Andrea Irace. Automatic TCAD model calibration for multi-cellular Trench-IGBTs. Solid-State Electronics 2014, 91, 36 -43.
AMA StyleLuca Maresca, Giovanni Breglio, Andrea Irace. Automatic TCAD model calibration for multi-cellular Trench-IGBTs. Solid-State Electronics. 2014; 91 ():36-43.
Chicago/Turabian StyleLuca Maresca; Giovanni Breglio; Andrea Irace. 2014. "Automatic TCAD model calibration for multi-cellular Trench-IGBTs." Solid-State Electronics 91, no. : 36-43.