Yunfei Gao

Mr. Yunfei Gao


Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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18 May 2023 in Micromachines
Verified
Journal Article
Open access
PDF file
ZZzhenghu zhang
zhenghu zhang
LZLinwei Zhang
Linwei Zhang
ZWZhipeng Wu
Zhipeng Wu
YGYunfei Gao
Yunfei Gao
LLLiang Lou
Liang Lou
In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to enhance the sensitivity of the accelerometer, the Sc0.2Al0.8N piezoelectric film is used in the device. The transverse piezoelectric coefficient d31 of the Sc0.2Al0.8N piezoelectric film is measured by the cantilever beam method and found to be −4.7661 pC/N, which is approximately two to three times greater than that of a pure AlN film. To further enhance the sensitivity of the accelerometer, the top electrodes are divided into inner and outer electrodes; then, the four piezoelectric cantilever beams can achieve a series connection by these inner and outer electrodes. Subsequently, theoretical and finite element models are established to analyze the effectiveness of the above structure. After fabricating the device, the measurement results demonstrate that the resonant frequency of the device is 7.24 kHz and the operating frequency is 56 Hz to 2360 Hz. At a frequency of 480 Hz, the sensitivity, minimum detectable acceleration, and resolution of the device are 2.448 mV/g, 1 mg, and 1 mg, respectively. The linearity of the accelerometer is good for accelerations less than 2 g. The proposed piezoelectric MEMS accelerometer has demonstrated high sensitivity and linearity, making it suitable for accurately detecting low-frequency vibrations.

6 May 2024 in Micromachines
Verified
Journal Article
Open access
PDF file
LJli junxiang
li junxiang
YGYunfei Gao
Yunfei Gao
ZZZhixin Zhou
Zhixin Zhou
QPQiang Ping
Qiang Ping
LQLei Qiu
Lei Qiu
LLLiang Lou
Liang Lou
Ultrasonic wireless power transfer technology (UWPT) represents a key technology employed for energizing implantable medical devices (IMDs). In recent years, aluminum nitride (AlN) has gained significant attention due to its biocompatibility and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. In the meantime, the integration of scandium-doped aluminum nitride (Al90.4%Sc9.6%N) is an effective solution to address the sensitivity limitations of AlN material for both receiving and transmission capabilities. This study focuses on developing a miniaturized UWPT receiver device based on AlScN piezoelectric micro-electromechanical transducers (PMUTs). The proposed receiver features a PMUT array of 2.8 × 2.8 mm2 comprising 13 × 13 square elements. An acoustic matching gel is applied to address acoustic impedance mismatch when operating in liquid environments. Experimental evaluations in deionized water demonstrated that the power transfer efficiency (PTE) is up to 2.33%. The back-end signal processing circuitry includes voltage-doubling rectification, energy storage, and voltage regulation conversion sections, which effectively transform the generated AC signal into a stable 3.3 V DC voltage output and successfully light a commercial LED. This research extends the scope of wireless charging applications and paves the way for further device miniaturization by integrating all system components into a single chip in future implementations.