A batch of ZnO thin films, pure and doped with molybdenum (up to 2 mol %), were prepared using the spray pyrolysis technique on glass and silicon substrates. The effect of molybdenum concentration on the morphology, structure and optical properties of the films was investigated. X-ray diffraction (XRD) results show a wurtzite polycrystalline crystal structure. The average crystallite size increases from 30 to 80 nm with increasing molybdenum content. Scanning electron microscopy (SEM) images demonstrate a smooth and homogeneous surface with densely spaced nanocrystalline grains. The number of nuclei increases, growing over the entire surface of the substrate with uniform grains, when the molybdenum concentration is increased to 2 mol %. The estimated root mean square (RMS) roughness values for the undoped and doped with 1 mol % and 2 mol % of ZnO thin films, defined by atomic force microscopy (AFM), are 6.12, 23.54 and 23.83 nm, respectively. The increase in Mo concentration contributes to the increase in film transmittance.

The main goal of this study was to investigate the properties of ZnO thin films, including pure films and those doped with indium (up to 8 mol%) that was deposited using a spray pyrolysis technique on glass and silicon substrates in order to prepare the position-sensitive structure, Si-SiO₂-ZnO:In. To this aim, the present work is focused on investigating the effect of indium concentration on the morphology, structure, and optical properties of the films. X-ray diffraction (XRD) analysis reveals a wurtzite polycrystalline structure. Scanning electron microscopy (SEM) images display a smooth and uniform surface characterized by closely packed nanocrystalline clusters. As the indium concentration rises to 8 mol%, the number of nuclei grows, resulting in uniformly distributed grains across the entire substrate surface. The estimated root mean square (RMS) roughness values for the thin films undoped and doped with 3 mol%, 5 mol%, and 8 mol% of ZnO measured using AFM are 6.13, 9.64, and 13.76 nm, respectively. The increase in indium concentration leads to a slight decrease in film transmittance. The measured LPV photosensitivity of about 44 mV/mm confirms the potential use of these thin films in practical applications.

This study reports the successful fabrication and characterization of two-dimensional (2D) vertical heterostructures composed of a semiconducting molybdenum disulfide (MoS₂) layer stacked with semimetallic platinum dichalcogenides (PtSe₂ and PtTe₂). The heterostructures were created using a versatile fabrication method that combines chemical vapor deposition (CVD) to grow high-quality MoS₂ nanolayers with thermally assisted conversion (TAC) for the synthesis of the Pt-based layers. The final MoS₂/PtSe₂ and MoS₂/PtTe₂ heterostructures were then assembled via a dry transfer process, ensuring high structural integrity. The quality and properties of these heterostructures were investigated using a range of advanced spectroscopic techniques. Raman spectroscopy confirmed the presence of characteristic vibrational modes for each material, validating successful formation. X-ray photoelectron spectroscopy (XPS) analysis further confirmed the elemental composition and oxidation states, though it also revealed the presence of elemental Pt⁰ and oxidized Te⁺⁴ in the PtTe₂ layer, suggesting an incomplete conversion. Importantly, the photoluminescence (PL) spectra showed a significant quenching effect, a clear sign of strong interlayer charge transfer, which is essential for optoelectronic applications. Finally, UV-Vis-NIR spectrophotometry demonstrated the combined optical properties of the stacked layers, with the Pt-based layers causing broadening and a blue-shift in the MoS₂ exciton peaks, indicating altered electronic and optical behavior. This research provides valuable insights into the synthesis and fundamental properties of MoS₂/PtX₂ heterostructures, highlighting their potential for next-generation electronic and optoelectronic devices.