Thermoluminescent (TL) properties of monoclinic zirconium dioxide ceramics were studied in order to assess the possibility of their use for measuring high doses (on the order of kGy) of pulsed electron beams (130 keV). Two types of samples were used: those synthesized by sintering in an electric furnace at T = 700–1700 °C and those synthesized in a flow of high-energy electrons (1.4 MeV) with a high power density. Analysis of the X-ray diffraction patterns using the Scherrer method revealed that annealing of ceramics of the first type at T > 1000 °C leads to a significant increase in the size of crystallites, which correlates with a significant increase in the intensity of the TL peak at 390 K. Type 2 ceramics synthesized by the electron beam method have the maximum TL response. Using the peak shape analysis method, the kinetic parameters of TL (activation energy, frequency factor, and kinetic order) were calculated. This study marks the first instance of establishing the patterns of influence of synthesis conditions and crystallite size on their values. The presence of an intense isolated TL peak, the sublinear nature of most dose dependencies, and negligible fading indicate the promise of the ceramics synthesized in this work for measuring high doses (several to tens of kGy).

Electrochemical deposition into a prepared SiO₂/Si-p ion track template was used to make orthorhombic SnO₂ vertical nanowires (NWs) for this study. As a result, a SnO₂-NWs/SiO₂/Si nanoheterostructure with an orthorhombic crystal structure of SnO₂ nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO₂-NWs/SiO₂/Si nanoheterostructure made this way has many p-n junctions.

This article studies the influence of solid-phase (type 1 samples) and melt-quenching (type 2 samples) technological modes of obtaining Na₃Fe₂(PO₄)₃ polycrystals on their structures and ion-conducting properties. α-Na₃Fe₂(PO₄)₃ polycrystals of the 1st type are formed predominantly under an isothermal firing regime, and the synthesis of the 2nd type is carried out under sharp temperature gradient conditions, contributing to the formation of glassy precursors possessing a reactive and deformed structure, in which the crystallization of crystallites occurs faster than in precursors obtained under isothermal firing. The elemental composition of α-Na₃Fe₂(PO₄)₃ type 2 polycrystals is maintained within the normal range despite the sharp non-equilibrium thermodynamic conditions of synthesis. The microstructure of the type 1 Na₃Fe₂(PO₄)₃ polycrystals is dominated by chaotically arranged crystallites of medium (7–10 μm) and large (15–35 μm) sizes, while the polycrystals of type 2 are characterized by the preferential formation of small (3–4 μm) and medium (7–10 μm) crystallites, causing uniaxial deformations in their structure, which contribute to a partial increase in their symmetry. The advantage of type 2 polycrystals is that they have higher density and conductivity and are synthesized faster than type 1 samples by a factor of 4. The article also considers the issues of crystallization in a solid-phase precursor from the classical point of view, i.e., the process of the formation of small solid-phase nuclei in the metastable phase and their growth to large particles due to association with small crystallites using phase transitions. Possible variants and models of crystallite growth in Na₃Fe₂(PO₄)₃ polycrystals, as well as distinctive features of crystallization between two types of samples, are discussed.

We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO₃) deposited into SiO₂/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 10⁸ ions/cm²) followed by etching in HF solution. ZnSeO₃ nanocrystals were obtained via chemical deposition from the aqueous solution of ZnCl₂ and SeO₂ as Zn-, Se- and O-precursors. To estimate the thermal stability of the deposited precipitates, heat treatment was carried out at 800 and 1000 °C for 60 min in a vacuum environment. Scanning electron microscopy (SEM), X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, and electrical measurements were used for the characterization of ZnSeO₃/SiO_2nanoporous/Si nanocomposites. Thermal treatment of the synthesized nanocomposites resulted in structural transformations with the formation of ZnSe and ZnO phases while the content of the ZnSeO₃ phase decreased. For the as-deposited and annealed precipitates, an emission in the range of (400 to 600) nm was observed. PL spectra were approximated by four Gaussian curves with maxima at ~550 nm (2.2 eV), 488 nm (2.54 eV), ~440 nm (2.82 eV), and 410 nm (3.03 eV). Annealing resulted in a decrease in PL intensity that was possibly due to the weight loss of the deposited substance during high-temperature treatment. The redistribution of maxima intensities after annealing was also observed with an increase in blue and violet emissions. The origin of the observed PL is discussed. The I–V curve analysis revealed an electronic type of conductivity for the ZnSeO₃(NCs)/SiO_2nanoporous/Si structure. The values of the specific conductivity were calculated within the percolation model. The sample annealed at 800 °C showed the highest specific conductivity of 8.5 × 10⁻⁶ Ohm⁻¹·cm⁻¹.

In the present work, we present the process of preparing CdS nanostructures based on templating synthesis using chemical deposition (CD) on a SiO₂/Si substrate. A 0.7 μm thick silicon dioxide film was thermally prepared on the surface of an n-type conduction Si wafer, followed by the creation of latent ion tracks on the film by irradiating them with swift heavy Xe ions with an energy of 231 MeV and a fluence of 10⁸ cm⁻². As a result of etching in hydrofluoric acid solution (4%), pores in the form of truncated cones with different diameters were formed. The filling of the nanopores with cadmium sulfide was carried out via templated synthesis using CD methods on a SiO_2 nanopores/Si substrate for 20–40 min. After CdS synthesis, the surfaces of nanoporous SiO_2 nanopores/Si were examined using a scanning electron microscope to determine the pore sizes and the degree of pore filling. The crystal structure of the filled silica nanopores was investigated using X-ray diffraction, which showed CdS nanocrystals with an orthorhombic structure with symmetry group 59 Pmmn observed at 2θ angles of 61. 48° and 69.25°. Photoluminescence spectra were recorded at room temperature in the spectral range of 300–800 nm at an excitation wavelength of 240 nm, where emission bands centered around 2.53 eV, 2.45 eV, and 2.37 eV were detected. The study of the CVCs showed that, with increasing forward bias voltage, there was a significant increase in the forward current in the samples with a high degree of occupancy of CdS nanoparticles, which showed the one-way electronic conductivity of CdS/SiO₂/Si nanostructures. For the first time, CdS nanostructures with orthorhombic crystal structure were obtained using track templating synthesis, and the density of electronic states was modeled using quantum–chemical calculations. Comparative analysis of experimental and calculated data of nanostructure parameters showed good agreement and are confirmed by the results of other authors.