Silicon-based solar cells dominate the photovoltaic market, with commercial monocrystalline silicon cells reaching efficiencies as high as 27.3% by May 2024. An alternative to monocrystalline silicon solar cells is polycrystalline solar cells. Despite their lower efficiency (record: 23.81%), their manufacturing process is simpler and cheaper, and their energy conversion efficiency is less sensitive to temperature changes. However, limitations persist in optical and electrical losses, particularly underutilizing ultraviolet (UV) radiation due to silicon’s bandgap. To address these issues, the application of down-converting materials like zinc oxide (ZnO) quantum dots (QDs) has gained attention. ZnO QDs absorb high-energy UV light and re-emit it in the visible spectrum, optimizing the portion of solar energy usable by silicon cells. This study explores the synthesis of ZnO QDs using a sol–gel method, followed by their application on polycrystalline silicon solar cells. Experimental results indicated an increase in short-circuit current and overall efficiency, with the efficiency rising from 18.67% to a maximum of 19.05% when ZnO QDs were deposited from a 5 mg/mL solution. These findings suggest that ZnO QDs could significantly enhance solar energy conversion efficiency by utilizing portions of the solar spectrum that would otherwise be wasted.

Modern energetic materials (EMs) have many different civil applications. One of their most promising applications in civil engineering is explosive hardening, which facilitates the fast and cost-effective improvement of mechanical properties in the treated material. In this work, we present the results of our investigation on the explosive hardening of S235JR Steel with PBX formulations containing silicone binders and 1,3,5-trinitro-1,3,5-triazinane (RDX). In terms of safety, the impact (5–15 J) and friction (240–360 N) sensitivity of the tested plastic-bonded explosives (PBXs) was verified, simultaneously with DSC tests, energy of activation calculations, and critical diameter measurement. The developed material, prepared with techniques similar to the anticipated working conditions, is characterized by a high detonation velocity (up to 7300 m/s), low sensitivity for mechanical factors (10 J, 288 N), and a small critical diameter (3.3 mm). The developed PBX based on a silicone binder demonstrated grain fragmentation, recrystallization, and an increase in the surface hardness of S235JR steel, which was confirmed with SEM, EBSD, microstructure analysis, and microhardness studies.

Zinc oxide (ZnO) is currently one of the most significant wide-bandgap semiconductor materials, attracting extensive research across diverse fields including materials science, chemistry, physics, medicine, electronics, and power engineering. Its exceptional properties, such as high optical transparency, high electron mobility, chemical stability, and compatibility with low-cost fabrication techniques, have established ZnO as a versatile material with immense application potential. A critical application for ZnO is its role as a transparent conducting oxide (TCO) in modern optoelectronic and photovoltaic devices, as well as in sensors, transparent electronics, and spintronics. To meet the requirements of these advanced applications, precise control over the structural, optical, and electrical properties of ZnO thin films is essential. This is effectively achieved through the selection of specific synthesis methods and intentional modification techniques, such as doping. This review provides a comprehensive overview of the synthesis and modification of ZnO thin films, with a particular focus on how various dopants influence their fundamental characteristics. The work discusses a range of deposition techniques, including physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), sol–gel methods, spray pyrolysis, and other solution-based approaches. The novelty of this review lies in its comparative analysis of different doping strategies combined with various thin-film deposition techniques, highlighting how specific synthesis routes influence dopant incorporation and ultimately determine functional properties. Furthermore, recent advances in tailoring ZnO thin films are summarized, alongside the identification of key challenges and future research directions. Ultimately, this work aims to provide researchers with a systematic perspective on the synthesis–structure–property relationships in doped ZnO thin films to support the development of optimized materials for next-generation electronic and optoelectronic devices. This review, thus, serves as a comprehensive reference for researchers and engineers seeking to optimize the functionality of ZnO-based thin films for emerging technological applications.