Increased portability, versatility and ubiquity of electronics devices are a result of their progressive miniaturization, requiring current flow through narrow channels. Present-day devices operate close to the maximum current-carrying-capacity (that is, ampacity) of conductors (such as copper and gold), leading to decreased lifetime and performance, creating demand for new conductors with higher ampacity. Ampacity represents the maximum current-carrying capacity of the object that depends both on the structure and material. Here we report a carbon nanotube-copper composite exhibiting similar conductivity (2.3-4.7 × 10(5) S cm(-1)) as copper (5.8 × 10(5) S cm(-1)), but with a 100-times higher ampacity (6 × 10(8) A cm(-2)). Vacuum experiments demonstrate that carbon nanotubes suppress the primary failure pathways in copper as observed by the increased copper diffusion activation energy (~2.0 eV) in carbon nanotube-copper composite, explaining its higher ampacity. This is the only material with both high conductivity and high ampacity, making it uniquely suited for applications in microscale electronics and inverters.

Increasing functional complexity and dimensional compactness of electronic devices have led to progressively higher power dissipation, mainly in the form of heat. Overheating of semiconductor-based electronics has been the primary reason for their failure. Such failures originate at the interface of the heat sink (commonly Cu and Al) and the substrate (silicon) due to the large mismatch in thermal expansion coefficients (∼300%) of metals and silicon. Therefore, the effective cooling of such electronics demands a material with both high thermal conductivity and a similar coefficient of thermal expansion (CTE) to silicon. Addressing this demand, we have developed a carbon nanotube–copper (CNT–Cu) composite with high metallic thermal conductivity (395 W m⁻¹ K⁻¹) and a low, silicon-like CTE (5.0 ppm K⁻¹). The thermal conductivity was identical to that of Cu (400 W m⁻¹ K⁻¹) and higher than those of most metals (Ti, Al, Au). Importantly, the CTE mismatch between CNT–Cu and silicon was only ∼10%, meaning an excellent compatibility. The seamless integration of CNTs and Cu was achieved through a unique two-stage electrodeposition approach to create an extensive and continuous interface between the Cu and CNTs. This allowed for thermal contributions from both Cu and CNTs, resulting in high thermal conductivity. Simultaneously, the high volume fraction of CNTs balanced the thermal expansion of Cu, accounting for the low CTE of the CNT–Cu composite. The experimental observations were in good quantitative concurrence with the theoretically described ‘matrix-bubble’ model. Further, we demonstrated identical in-situ thermal strain behaviour of the CNT–Cu composite to Si-based dielectrics, thereby generating the least interfacial thermal strain. This unique combination of properties places CNT–Cu as an isolated spot in an Ashby map of thermal conductivity and CTE. Finally, the CNT–Cu composite exhibited the greatest stability to temperature as indicated by its low thermal distortion parameter (TDP). Thus, this material presents a viable and efficient alternative to existing materials for thermal management in electronics.

The realization of nanoscale, multi-dimensional patternability of CNT–Cu conductive lines which exhibit superior ampacity and high-temperature stability compared to Cu is reported.

A variety of materials such as low dimensional carbon substrates (1D, 2D, and 3D), nanoprisms, nanocubes, proteins, ceramics, and DNA to name a few, have been explored in surface plasmon‐coupled emission (SPCE) platform. While these offer new physicochemical insights, investigations have been limited to silver as primary plasmonic material. Although, gold nanoparticles (AuNPs) exhibit robust performance, its intrinsic property to quench the emission from radiating dipoles (at distances < 5 nm) has impeded its utility. Despite the use of metal‐dielectric resonances (with Au decorated SiO ₂ NPs) and sharp nanotips (from Au nanostars) for dequenching the emission, the enhancements obtained has been less than 200‐fold in SPCE platform. To address these long‐standing challenges, we demonstrate the utility of gold soret colloids (AuSCs) and photonic crystal‐coupled emission (PCCE) platform. The soret nano‐assemblies synthesized using adiabatic cooling technique presented integrated hotspots when taken with high refractive index Nd ₂ O ₃ ‘Huygens sources’. The collective and coherent coupling between localized Mie and delocalized Bragg plasmons (of sorets), dielectric plasmons (of Nd ₂ O ₃ ), highly confined and intense Bloch surface waves (of PCCE platform) aided in realization of dequenched, as well as amplified > 1500‐fold enhancements at the photoplasmonic nanocavity interface, presenting new opportunities for multidisciplinary applications.