In this paper, we propose a fully integrated switched-capacitor DC–DC converter with low ripple and fast transient response for portable low-power electronic devices. The proposed converter reduces the output ripple by filtering the control ripple via combining a low-dropout regulator with a main switched-capacitor DC–DC converter with a four-bit digital capacitance modulation control. In addition, the four-phase interleaved technique applied to the main converter reduces the switching ripple. The proposed converter provides an output voltage ranging from 1.2 to 1.5 V from a 3.3 V supply. Its peak efficiency reaches 73% with ripple voltages below 55 mV over the entire output power range. The transient response time for a load current variation from 100 μA to 50 mA is measured to be 800 ns. Importantly, the converter chip, which is fabricated using 0.13 μm complementary metal–oxide–semiconductor (CMOS) technology, has a size of 2.04 mm². We believe that our approach can contribute to advancements in power sources for applications such as wearable electronics and the Internet of Things.

This paper proposes a new structure of 24-GHz class-C voltage-controlled oscillator (VCO) using an auto-adaptive bias technique. The VCO in this paper uses a digitally controlled circuit to eliminate the possibility of start-up failure that a class-C structure can have and has low phase noise and a wide frequency range. To expand the frequency tuning range, a 3-bit cap-bank is used and a triple-coupled transformer is used as the core inductor. The proposed class-C VCO implements a 65-nm RF CMOS process. It has a phase noise performance of −105 dBc/Hz or less at 1-MHz offset frequency and the output frequency range is from 22.8 GHz to 27.3 GHz, which consumes 8.3–10.6 mW of power. The figure-of-merit with tuning range (FoM_T) of this design reached 191.1 dBc/Hz.

In this paper, a fully-integrated dual-mode X-band radar transceiver that supports Doppler radar and frequency modulated continuous wave (FMCW) radar is proposed. To remove large off-chip DC-blocking capacitors in the Doppler mode, the double-conversion technique and local oscillator (LO) chopping technique are introduced. These techniques remove the DC offset and makes the transceiver more robust to the TX to RX leakage. In addition, they also improve the noise figure (NF) by filtering out 1/f noise of the analog baseband. The FMCW radar is realized using a direct-conversion receiver and a chirp generator. The chirp generator consists of a frequency sweep generator (FSG) and a fractional-N phase-locked loop (PLL). All the analog baseband components including a programable gain amplifiers (PGA) and 1/R4 range compensation filters are integrated on the chip as well as a bandgap and low-dropout regulators. The operating frequency is from 9.7 to 12.3 GHz, which consumes 216 mW in Doppler mode and 201.6 mW in FMCW mode from a 1.2-V supply voltage. The maximum chirp bandwidth is 750 MHz and the maximum receiver gain is 76 dB with 6-dB gain step. The chip size of the transceiver is 7.68 mm2 including all the pads.

Recently, studies have been actively carried out to implement motion detecting sensors by applying radar techniques. Doppler radar or frequency-modulated continuous wave (FMCW) radar are mainly used, but each type has drawbacks. In Doppler radar, no signal is detected when the movement is stopped. Also, FMCW radar cannot function when the detection object is near the sensor. Therefore, by implementing a single continuous wave (CW) radar for operating in dual-mode, the disadvantages in each mode can be compensated for. In this paper, a dual mode local oscillator (LO) is proposed that makes a CW radar operate as a Doppler or FMCW radar. To make the dual-mode LO, a method that controls the division ratio of the phase locked loop (PLL) is used. To support both radar mode easily, the proposed LO is implemented by adding a frequency sweep generator (FSG) block to a fractional-N PLL. The operation mode of the LO is determined by according to whether this block is operating or not. Since most radar sensors are used in conjunction with microcontroller units (MCUs), the proposed architecture is capable of dual-mode operation by changing only the input control code. In addition, all components such as VCO, LDO, and loop filter are integrated into the chip, so complexity and interface issues can be solved when implementing radar sensors. Thus, the proposed dual-mode LO is suitable as a radar sensor.

This paper presents two single-pole, double-throw (SPDT) mm-wave switches for Ka-band phased-array transceivers, fabricated with a 65-nm complementary metal oxide semiconductor (CMOS) process. One switch employs cross-biasing (CB) control with a single supply, while the other uses dual-supply biasing (DSB) control with positive and negative voltages. Negative voltages were generated internally, using a ring oscillator and a charge pump. Identical gate and body floated N-type metal oxide semiconductor field effect transistors (N-MOSFETs) in a triple well were used as the switch core transistors. Inductors were used to improve the isolation between the transmitter (TX) and receiver (RX), as well as insertion loss, by canceling the parasitic capacitance of the switch core transistors at resonance. The size of the proposed radio frequency (RF) switch is 260 μm × 230 μm, excluding all pads. The minimum insertion losses of the CB and DSB switches were 2.1 dB at 28 GHz and 1.93 dB at 24 GHz, respectively. Between 25 GHz and 34 GHz, the insertion losses were less than 2.3 dB and 2.5 dB, the return losses were less than 16.7 dB and 17.3 dB, and the isolation was over 18.4 dB and 15.3 dB, respectively. The third order input intercept points (IIP3) of the CB and DSB switches were 38.4 dBm and 39 dBm at 28 GHz, respectively.