This experimental work studies the translocation of bovine serum albumin (BSA) proteins through MoS₂ nanopores. A simple method of device fabrication is developed based on dry-transfer of exfoliated MoS₂ membranes and subsequent TEM drilling, yielding MoS₂ nanopores of a few monolayers thick and diameters as small as ∼11 nm. The current-voltage relation and low-frequency current noise of the devices are characterized. Typical BSA translocation signals that possibly correspond to various orientations are observed in the MoS₂ devices, exhibiting enhanced amplitude and similar characteristics when compared to those from a silicon nitride (SiN_x) control. Furthermore, the statistical data of the signal amplitude and dwell time at various biases are analyzed. These results show opportunities of single-molecular protein analysis using MoS₂ nanopores.

Based on the bulk-Si substrate, the CMOS tree-like FETs including the FishboneFETs with bottom SiGe nano-fin and the TreeFETs without bottom SiGe nano-fin were both designed and experimentally fabricated. The growth of bottom SiGe layer with different Ge fraction following by an accurately selective etching is developed for realizing SiGe nano-fins between Si nanosheets (NSs). The results show that the I _on / I _off ratio (over 1×10 ⁵ ) and the short channel effects (SCEs) of TreeFETs are effectively optimized, and the effective channel width ( W _eff is increased for FishboneFETs on the same footprint. Due to the hole conduction advantage of SiGe nano-fin, the on-current ( I _on ) of p-type TreeFETs can be higher than that of n-type TreeFETs at V _OV =| V _gs - V _th |=0.5 V. Meanwhile, the surface scattering of SiGe nano-fin also affects the effective field-effect mobility. As the L _g scaling, both p-type tree-like FETs exhibit more obvious SCEs than n-type devices, which is maybe the reason of a lower hole barrier occurring by the valence band offset (Δ E _v ) obtained in the strained SiGe nano-fin. The results provided one meaningful guide for tree-like FETs optimizing future GAAFET process and CMOS circuits.

MoS ₂ -graphene heterostructure nanopores can prolong the dwell time of BSA molecules up to more than 100 ms compared with other kinds of nanopores.

Three types of highly transparent inverter circuits, enhancement/depletion, pseudo-CMOS and feedback structures, are fabricated by using zinc-oxide thin film transistors (TFTs) with deuterium plasma immersion to adjust the threshold voltage of the depletion-mode TFTs. Their DC and AC performance are investigated and compared systematically. Especially, the feedback structure inverters demonstrate a maximum gain of −310V/V at VDD = 10 V, which is the highest DC gain ever to be reported for oxide TFTs. Furthermore, the frequency responses of these three inverter types are examined, showing a maximum AC gain of 210 V/V at a 10 mV amplitude input in the pseudo-CMOS inverters. These high-gain transparent inverters have great potential to be used as the common-source amplifiers in the measurement of photo-stimulated electroencephalogram signals.