Giuseppe Papotto

Dr. Giuseppe Papotto

orcid

Research Focus & Metrics

Academic Career Length

9Years (2018-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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26 April 2022 in IEEE Transactions on Circuits and Systems II: Express Briefs
Verified
Journal Article
Closed access
Egidio RagoneseEgidio Ragonese
Egidio Ragonese
GPGiuseppe Papotto
Giuseppe Papotto
CNClaudio Nocera
Claudio Nocera
ACAndrea Cavarra
Andrea Cavarra
GPGiuseppe Palmisano
Giuseppe Palmisano
This brief gives an overview of recent advancements in CMOS automotive radar sensors, focusing on the most critical circuit design at mm-wave frequencies. Highly scaled CMOS technologies enable very low-power consumption, reduced costs, and higher data processing capacity and integration compared to state-of-the-art SiGe BiCMOS chip-set solutions commonly adopted in commercial products. The very bottleneck is still represented by the radio front-end due to the challenging requirements of long-range radars. Circuit topologies and design tradeoffs are here discussed with reference to critical building blocks of the mm-wave radar front-end, reporting circuit implementations for a 77-GHz long-range radar sensor in a 28-nm fully-depleted silicon-on-insulator CMOS technology.

25 July 2018 in IEEE Transactions on Circuits and Systems II: Express Briefs
Verified
Journal Article
Closed access
APAlessandro Parisi
Alessandro Parisi
AFAlessandro Finocchiaro
Alessandro Finocchiaro
GPGiuseppe Papotto
Giuseppe Papotto
GPGiuseppe Palmisano
Giuseppe Palmisano
This brief presents a fully CMOS voltage reference based on a self-biased topology, which provides low current consumption while saving silicon area. Temperature compensation is achieved by means of a subthreshold triode-based Widlar current reference and a proper arrangement of an active load. The proposed voltage reference was fabricated in a standard 0.13-μm CMOS technology and occupies a core area as low as 0.003 mm 2 . The circuit properly operates with a power supply ranging from 2.4 V to 1.1 V while providing a reference voltage of around 800 mV with an average temperature coefficient of 100 ppm/°C and an overall current consumption below 25 nA. This performance makes the proposed voltage reference very suitable for RF-powered applications.

6 August 2020 in International Journal of RF and Microwave Computer-Aided Engineering
Verified
Journal Article
Closed access
PDF file
SSSimone Spataro
Simone Spataro
Nunzio SalernoNunzio Salerno
Nunzio Salerno
GPGiuseppe Papotto
Giuseppe Papotto
Egidio RagoneseEgidio Ragonese
Egidio Ragonese

6 June 2019 in IEEE Transactions on Circuits and Systems II: Express Briefs
Verified
Journal Article
Closed access
AFAlessandro Finocchiaro
Alessandro Finocchiaro
GPGiuseppe Papotto
Giuseppe Papotto
Egidio RagoneseEgidio Ragonese
Egidio Ragonese
GPGiuseppe Palmisano
Giuseppe Palmisano
This paper presents a variable-gain amplifier (VGA) for automotive radar applications integrated in a 28-nm fully depleted (FD) silicon-on-insulator (SOI) CMOS technology. The amplifier operates at a power supply as low as 1 V and guarantees 30-dB linear-in-dB gain variation with a 3-dB step. The back-gate of the MOS transistors has been exploited to implement a back-gate control based offset cancellation loop, thus avoiding the use of inter-stage coupling capacitors that introduce frequency limitations due to parasitic capacitances. The VGA exhibits a bandwidth from 100 kHz to 20 MHz, which is compliant with typical frequency-modulated continuous wave (FMCW) radars. It also guarantees a 1-dB compression point (P1dB) better than -36 dBm and an input-referred noise (IRN) of 12.5 nV/Hz and 7 nV/Hz at 1 MHz and 10 MHz, respectively, with a power consumption as low as 1.7 mW.

18 June 2021 in Electronics
Verified
Journal Article
Open access
PDF file
APAlessandro Parisi
Alessandro Parisi
GPGiuseppe Papotto
Giuseppe Papotto
Egidio RagoneseEgidio Ragonese
Egidio Ragonese
GPGiuseppe Palmisano
Giuseppe Palmisano
This paper presents a switched capacitor low-pass filter in a 28-nm fully depleted silicon on insulator CMOS technology for 77-GHz automotive radar applications. It is operated at a power supply as low as 1 V and guarantees 5-dB in-band voltage gain while providing out-of-band attenuation higher than 36 dB and a programmable passband up to 30 MHz. A double sampling technique is adopted, which allows high operating frequency to be achieved while saving power. Moreover, low-voltage biasing and common-mode feedback circuits are exploited to guarantee an almost rail-to-rail output voltage swing. The proposed filter provides an output 1-dB compression point as high as 8.7 dBm with a power consumption of 9 mW. To the authors’ knowledge, this is the first SC-based implementation of a low pass filter for automotive radar applications.

11 December 2020 in Electronics
Verified
Journal Article
Open access
PDF file
Egidio RagoneseEgidio Ragonese
Egidio Ragonese
CNClaudio Nocera
Claudio Nocera
ACAndrea Cavarra
Andrea Cavarra
GPGiuseppe Papotto
Giuseppe Papotto
SSSimone Spataro
Simone Spataro
GPGiuseppe Palmisano
Giuseppe Palmisano
This paper presents an extensive comparison of two 28-nm CMOS technologies, i.e., standard and mm-wave-optimized (i.e., thick metals and intermetal oxides) back-end-of-line (BEOL). The proposed comparison is carried out at both component and circuit level by means of a quantitative analysis of the actual performance improvements due to the adoption of a mm-wave-optimized BEOL. To this end, stand-alone transformer performance is first evaluated and then a complete mm-wave macroblock is investigated. A 77-GHz down-converter for frequency modulated continuous wave (FMCW) long-range/medium range (LR/MR) radar applications is exploited as a testbench. For the first time, it is demonstrated that thicker metals and intermetal oxides do not guarantee significant improvements at mm-wave frequencies and a standard (low-cost) BEOL is competitive in comparison with more complex (expensive) ones.