In this article, the comparison of nanosheet (NS) FET, CombFET, and TreeFETs at advanced technology nodes is performed. Initially, the DC metrics like $I_{\mathrm {ON}}$ , $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ and $I_{\mathrm {D}} - V_{\mathrm {DS}}$ are dominated by TreeFET compared to Comb and NSFET. The TreeFET exhibits higher $I_{\mathrm {ON}}$ and ensures high-performance (HP) applications at advanced nodes. However, the NSFET continues as a better performer towards low power (LP) applications. The TreeFET dominates the performance and switching performance for temperature variation. At lower temperatures, the NS, Comb, and TreeFETs have a marginal impact on $I_{\mathrm {OFF}}$ . The analog performance is dominated by TreeFET due to higher $I_{\mathrm {ON}}$ . The NSFET exhibits lower $C$ gd and $C$ gs due to the absence of interbridges (IB) between channels. The RF performance is also dominated by Comb and TreeFETs due to the presence of IBs. Further, TreeFET based CMOS inverter outperforms in terms of switching current ( $I_{\mathrm {SC}}$ ) compared to the NSFET and CombFET counterparts. The 27-stage ring oscillator (RO) performance of TreeFET dominates Comb and NSFET with 11.56 GHz ensuring driving radio frequency applications. Thus, the paper will give deep insights into the performance of emerging FETs at both device as well as circuit levels.

In this article, a reliable static random access memory (SRAM) circuit design is proposed for improved thermal and electrical performance at 5-nm technology nodes. The proposed SRAM circuit is developed by incorporating bottom-up approach (from device level to circuit level). The proposed device/circuit design utilizes high thermal conductivity and high permittivity of titanium dioxide (TiO $_{\text{2}}$ ). Specifically, TiO $_{\text{2}}$ -based vertically stacked nanosheet field-effect transistor (NSFET) in the proposed SRAM shows the improvement of maximum lattice temperature ( $\textit{T}_{\text{MAX}}$ ) from 564 to 431 K, which enables the improvement of electron mobility ( $\mu _{\text{electron}}$ ) by 53.1%. In addition, the proposed device structure shows the improvement of ON-current ( $\textit{I}_{\text{on}}$ )/gate current ( $\textit{I}_{\text{gate}}$ ), by 18%/1000%, compared to hafnium oxide (HfO $_{\text{2}}$ )-based vertically stacked NSFET. Because of this thermal/electrical performance boosting, the proposed SRAM circuit shows the enhancement of hold-signal-to-noise margin SNM (HSNM), read-SNM (RSNM), read access time (RAT), and write access time (WAT) at the same time. This thermal and electrical co-improvement indicates that the proposed device structure could enable reliable IC chip design.

A unified quasi-ballistic transport model is developed for single- and double-gate graphene field-effect transistors (GFETs) using the McKelvey flux theory approach. The proposed model is compact, scalable, and compatible for the simulation of I-V characteristics of GFET for all regions of device operation. The drain current equation (IDS) incorporates the formulation of quasithermal velocity, quasi-ballistic mobility of charge carrier (describe the carrier transport of 2-D material like graphene), and source/drain backscattering coefficient. This model is also capable to describe the mobility of graphene material in degenerate and nondegenerate states. The GFET with different channel lengths, widths, and oxide thicknesses is simulated using this model for single- and double-gate devices. The proposed model synchronized with experimental results and explains the peculiar transport characteristics of GFET with normalized root-mean-square error less than 9%.

Background: Photorhabdus are Gram-negative nematode-symbiotic and insect-pathogenic bacteria. The species Photorhabdus asymbiotica is able to infect humans as well as insects. We investigated the secreted proteome of a clinical isolate of P. asymbiotica at different temperatures in order to identify proteins relevant to the infection of the two different hosts. Results: A comparison of the proteins secreted by a clinical isolate of P. asymbiotica at simulated insect (28°C) and human (37°C) temperatures led to the identification of a small and highly abundant protein, designated Pam, that is only secreted at the lower temperature. The pam gene is present in all Photorhabdus strains tested and shows a high level of conservation across the whole genus, suggesting it is both ancestral to the genus and probably important to the biology of the bacterium. The Pam protein shows limited sequence similarity to the 13.6 kDa component of a binary toxin of Bacillus thuringiensis. Nevertheless, injection or feeding of heterologously produced Pam showed no insecticidal activity to either Galleria mellonella or Manduca sexta larvae. In bacterial colonies, Pam is associated with an extracellular polysaccharide (EPS)-like matrix, and modifies the ability of wild-type cells to attach to an artificial surface. Interestingly, Surface Plasmon Resonance (SPR) binding studies revealed that the Pam protein itself has adhesive properties. Although Pam is produced throughout insect infection, genetic knockout does not affect either insect virulence or the ability of P. luminescens to form a symbiotic association with its host nematode, Heterorhabditis bacteriophora. Conclusions: We studied a highly abundant protein, Pam, which is secreted in a temperature-dependent manner in P. asymbiotica. Our findings indicate that Pam plays an important role in enhancing surface attachment in insect blood. Its association with exopolysaccharide suggests it may exert its effect through mediation of EPS properties. Despite its abundance and conservation in the genus, we find no evidence for a role of Pam in either virulence or symbiosis.

This paper delves into the burgeoning realm of CombFETs, offering a comprehensive analysis of their structural design, simulation methodologies, and performance characteristics. With a focus on addressing the evolving demands of semiconductor technology, particularly in the sub-5-nanometer nodes. This study explores the efficacy of CombFETs as viable successors to conventional transistor architectures. Through detailed simulations, key geometric parameters such as interbridge width (W _IB ) and height (H _IB ) are investigated, revealing their profound impact on device performance metrics. Around 89.79% increment in average power and a 1.805× increase in switching current (I SC ) is noticed when H _IB is varied from 10 nm to 30 nm for Nand gate. Moreover, CombFET based LIF neuron is designed and performance is analyzed at different values of HIB. Circuit-level analyses further demonstrate the compatibility and effectiveness of CombFETs in practical electronic systems, showcasing their potential for driving advancements in computing and neuromorphic architectures. This study underscores the pivotal role of CombFETs in pushing the boundaries of semiconductor technology, offering insights into their optimization and integration into nextgeneration electronic devices.