29 November 2024 in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IR drop on the power delivery network (PDN) is closely related to PDN’s configuration and cell current consumption. As the integrated circuit (IC) design is growing larger, dynamic IR drop simulation becomes computationally unaffordable and machine learning based IR drop prediction has been explored as a promising solution. Although CNN-based methods have been adapted to IR drop prediction task in several works, the shortcomings of overlooking PDN configuration is non-negligible. In this paper, we consider not only how to properly represent cell-PDN relation, but also how to model IR drop following its physical nature in the feature aggregation procedure. Thus, we propose a novel graph structure, PDNGraph, to unify the representations of the PDN structure and the fine-grained cell-PDN relation. We further propose a dual-branch heterogeneous network, PDNNet, incorporating two parallel GNN-CNN branches to favorably capture the above features during the learning process. Several key designs are presented to make the dynamic IR drop prediction highly effective and interpretable. We are the first work to apply graph structure to deep-learning based dynamic IR drop prediction method. Experiments show that PDNNet outperforms the state-of-the-art CNN-based methods and achieves 545× speedup compared to the commercial tool, which demonstrates the superiority of our method.
21 August 2024 in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Routing is the most time-consuming step in the implementation flow of field programmable gate array (FPGA) designs. With the advance in transistor scaling and system integration, hardware resources in FPGA devices are growing in a larger quantity and diversity. The routing architecture is designed to be more complicated for mapping RTL designs to FPGA devices correctly, which brings significant challenges for current FPGA routing algorithms. The key challenges for routing algorithms lie in large solution space and heavy congestion, especially for high-fanout nets (HFNets). We propose a partition-based algorithm to accelerate the routing of HFNets, which decomposes the global routing guide to shrink the search space for connecting each sink. Meanwhile, the congestions existing inside configurable logic block (CLB) are hard to handle by traditional sequential negotiation-based algorithms, because the industrial routing architecture is quite complex. We propose a concurrent intra-CLB rerouting algorithm to effectively resolve routing congestion inside a CLB tile induced by connections between intra-CLB logic pins, e.g., logic elements and switch boxes. Experimental results on modified ISPD2016 benchmarks demonstrate that our framework can achieve 100% routability in 9.8% less wirelength and $11\times $ less runtime, while the state-of-the-art VTR 8.0 routing algorithm fails at 7 of 12 benchmarks.
21 April 2025 in IEEE Transactions on Electron Devices
Recently, we proposed a novel transistor architecture for 3-D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dualsided interconnects. With dual-sided power rails and signal tracks, FFET can achieve an aggressive 2.5 T cell height. As a tradeoff, the complex structure and limited numbers of M0 tracks could limit the standard cell design. As a solution, multiple innovations were introduced and examined in this work. Based on an advanced node design rule, several unique building blocks in FFET such as drain merge (DM), gate merge (GM), field DM (FDM), and buried signal track (BST) were investigated. Other key design concepts of multi-row, split gate (SG), and dummy gate (DG) insertion were also carefully studied, delivering around 35.6% area reduction compared with 3 T CFET. Furthermore, the symmetric design of FFET has unique superiority over CFET thanks to the separate N/P logic on two sides of the wafer and their connections using DM and GM. New routing scheme with dual-sided output pins on both wafer frontside (FS) and backside (BS) was proposed for the first time. Finally, we conducted a comprehensive evaluation on complex cell design, taking AOI22 as an example. New strategies were proposed and examined. The FDM design is identified as the best, outperforming the BST and DG design by 1.93% and 5.13% for the transition delay.