We present a low-temperature post-processing module, utilizing polyimide as a sacrificial layer and novel materials such as PECVD SiC and metals (sputtered aluminium and titanium) as structural layers. The use of spin-on polyimide allows an all-dry final release step overcoming stiction problems often encountered in wet sacrificial etching processes. The spinning and curing procedure has been tailored to the specific needs of the IC-compatible post-process module. For the patterning of the polyimide, thin films of aluminium, PECVD silicon oxide or silicon carbide are employed as a mask layer. Anisotropic etching of the mask film and of the polyimide layer is accomplished by RIE. After patterning the structural layer, sacrificial etching of the polyimide is done using an isotropic dry etch process in high-density oxygen plasma. An underetch rate of 4 µ mm in −1 is achieved. Compatibility with different structural materials is tested and test structures are designed and realized in a fully post-processing surface micromachining module.

Although tissue and cell manipulation nowadays is a common task in biomedical analysis, there are still many different ways to accomplish it, most of which are still not sufficiently general, inexpensive, accurate, efficient or effective. Several problems arise both for in vivo or in vitro analysis, such as the maximum overall size of the device and the gripper jaws (like in minimally-invasive open biopsy) or very limited manipulating capability, degrees of freedom or dexterity (like in tissues or cell-handling operations). This paper presents a new approach to tissue and cell manipulation, which employs a conceptually new conjugate surfaces flexure hinge (CSFH) silicon MEMS-based technology micro-gripper that solves most of the above-mentioned problems. The article describes all of the phases of the development, including topology conception, structural design, simulation, construction, actuation testing and in vitro observation. The latter phase deals with the assessment of the function capability, which consists of taking a series of in vitro images by optical microscopy. They offer a direct morphological comparison between the gripper and a variety of tissues.

We report on the main design and technological characteristics related to the latest 3D sensor process developments at Fondazione Bruno Kessler (FBK, Trento, Italy). With respect to the previous version of this technology, which involved columnar electrodes of both doping types etched from both wafer sides and stopping at a short distance from the opposite surface, passing-through columns are now available. This feature ensures better performance, but also a higher reproducibility, which is of concern in medium volume productions. In particular, this R&D project was aimed at establishing a suitable technology for the production of 3D pixel sensors to be installed into the ATLAS Insertable B-Layer. An additional benefit is the feasibility of slim edges, which consist of a multiple ohmic column termination with an overall size as low as 100 μm. Eight batches with two different wafer layouts have been fabricated using this approach, and including several design options, among them the ATLAS 3D sensor prototypes compatible with the new read-out chip FE-I4.

The fabrication of a novel class of microgrippers is demonstrated by means of bulk microelectromechanical systems (MEMS) technology using silicon on insulator wafer substrates and deep reactive ion etching. Hard masking is implemented to maximize the selectivity of the bulk etching using sputtered aluminum and aluminum-titanium thin films. The microroughness problem related to the use of metal mask is addressed by testing different mask combinations and etching parameters. The O₂ flow, SF₆ pressure, wafer temperature, and bias power are examined, and the effect of each parameter on micromasking is assessed. Sidewall damage associated with the use of a metal mask is eliminated by interposing a dielectric layer between silicon substrate and metal mask. Dedicated comb-drive anchors are implemented to etch safely both silicon sides down to the buried oxide, and to preserve the wafer integrity until the final wet release of the completed structures. A first set of complete devices is realized and tested under electrical actuation.