Electrowetting display (EWD) performance is severely affected by ink distribution and charge trapping in pixel cells. Therefore, a multi structural driving waveform is proposed for improving the aperture ratio of EWDs. In this paper, the hysteresis characteristic (capacitance–voltage, C-V) curve of the EWD pixel is tested and analyzed for obtaining the driving voltage value at the inflection point of the driving waveform. In the composition of driving waveform, a voltage slope is designed for preventing ink dispersion and a reverse pulse is designed for releasing the trapped charge which is caused by hysteresis characteristic. Finally, the frequency and the duty cycle of the driving waveform are optimized for the max aperture ratio by a series of testing. The experimental results show that the proposed driving waveform can improve the ink dispersion behavior, and the aperture ratio of the EWD is about 8% higher than the conventional driving waveform. At the same time, the response speed of the driving waveform can satisfy the dynamic display in EWDs, which provides a new idea for the design of the EWD driving scheme.

Two-dimensional (2D) MoS₂ have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS₂ exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS₂ radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS₂ RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency (f_T) and maximum oscillation frequency (f_max) increased with reducing gate lengths. From transistors with a gate length of 0.3 μm, we demonstrated an extrinsic f_T of 4 GHz and f_max of 10 GHz. Furthermore, statistical analysis of 14 flexible MoS₂ RF transistors is presented in this work. The study of a flexible mixer demonstrates the dependence of conversion gain versus gate voltage, LO power and input signal frequency. These results present the potential of CVD bilayer MoS₂ for future flexible high-frequency electronics.

Lithium-sulfur battery (LSB) will become the next generation energy storage device if its severe shuttle effect and sluggish redox kinetics can be effectively addressed. Here, a unique three-dimensional hollow reduced graphene oxide microsphere decorated with ZnO nanoparticles (3D-ZnO/rGO) is synthesized to decrease the dissolution of lithium polysulfide (LiPS) into the electrolyte. The chemical adsorption of ZnO on LiPS is combined with the physical adsorption of 3D-rGO microsphere to synergistically suppress the shuttle effect. The obtained 3D-ZnO/rGO can provide sufficient space for sulfur storage, and effectively alleviate the repeated volume changes of sulfur during the cycle. When the prepared S-3D-ZnO/rGO was used as the cathode in LSB, an initial discharge specific capacity of 1277 mAh g⁻¹ was achieved at 0.1 C. After 100 cycles, 949 mAh g⁻¹ can still be maintained. Even at 1 C, a reversible discharge specific capacity of 726 mAh g⁻¹ was delivered.

The electrolyte is one of the key components of dye-sensitized solar cells’ (DSSC) structure. In this paper, the electrolyte formulation of a new DSSC with external photoanode structure was studied. Based on the idea that the electrolyte should match the light absorption and light path, iodine series electrolytes with different concentrations were configured and used in the experiment. The results showed that the external photoanode structure solar cells assembled with titanium electrode had the best photoelectric conversion ability when the concentration of I₂ was 0.048 M. It achieved the open circuit voltage of 0.71 V, the short circuit current of 8.87 mA, and the filling factor of 57%.

Based on the PM6:Y6 binary system, a novel non-fullerene acceptor material, D18-Cl, was doped into the PM6:Y6 blend to fabricate the active layer. The effects of different doping ratios of D18-Cl on organic solar cells were investigated. The best-performing organic solar cell was achieved when the doping ratio of D18-Cl reached 20 wt%. It exhibited a short-circuit current of 28.13 mA/cm², a fill factor of 70.25%, an open-circuit voltage (Voc) of 0.81 V, and a power conversion efficiency of 16.08%. The introduction of an appropriate amount of D18-Cl expanded the absorption spectrum of the active layer, improved the morphology of the active layer, reduced large molecular aggregation and defects, minimized bimolecular recombination, and optimized the collection efficiency of charge carriers. These results indicate the critical importance of selecting an appropriate third component in binary systems and optimizing the doping ratio to enhance the performance of ternary organic solar cells.

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS₂) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS₂ RF transistors, the impact of the back-gate bias on dual-gate MoS₂ RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS₂ high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS₂ as channel material, high-performance top-gate transistors with on/off ratio of 10⁷ and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at V_bg = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic f_max of 29.7 GHz was achieved, which is as high as 2.1 times the f_max without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS₂ RF transistors and presents the potential of dual-gate MoS₂ RF transistors for future high-frequency applications.