High-precision optical component manufacturing by ion beam machining tools with ultra-high material removal resolution and dynamically adjustable removal efficiency is important in various industries. In this paper, we propose a low-energy pulsed ion beam (LPIB) technology that can obtain a single pulse with high-resolution material removal by adjusting the pulse frequency and duty cycle, and enable the dynamic adjustment of the removal efficiency. The pulse frequency is 1–100 Hz, and the duty cycle is 0–100%. For monocrystalline silicon, the pulse frequency and duty cycle are set to 100 Hz and 1%, respectively; thus, the single-shot pulse depth removal resolution of material is 6.7 × 10⁻⁴ nm, which means every 21 pulses can remove one silicon atom layer. Compared with IBF, where the removal resolution of the maximum depth is about 0.01 nm, the controllable resolution is one to two orders of magnitude higher. There is a linear relationship between the removal efficiency of the pulsed ion beam removal function and the pulse duty ratio. The material removal of a single pulse can be adjusted in real time by adjusting the pulse duty cycle and frequency. Owing to its high resolution and wide adjustable removal efficiency, LPIB has broad application prospects in the field of sub-nano-precision surface modification, quality tuning of inertial resonant devices, and so on. This technology is expected to advance surface processing and ultra-precision manufacturing.

Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide.

The continuous phase plate (CPP) provides excellent beam smoothing and shaping impacts in the inertial confinement fusion application. However, due to the features of its dispersion, its surface gradient is frequently too large (>2 μm/cm) to process. When machining a large gradient surface with continuous ion beam figuring (IBF), the acceleration of the machine motion axis cannot fulfill the appropriate requirements, and the machining efficiency is further influenced by the unavoidable extra removal layer. The pulsed ion beam (PIB) discretizes the ion beam by incorporating frequency-domain parameters, resulting in a pulsed beam with a controlled pulse width and frequency and avoiding the extra removal layer. This research evaluates the processing convergence ability of IBF and PIB for the large gradient surface using simulation and experiment. The findings reveal that PIB offers obvious advantages under the same beam diameter. Compared with the convergence ratio (γ = 2.02) and residuals (RMS = 184.36 nm) of IBF, the residuals (RMS = 27.48 nm) of PIB are smaller, and the convergence ratio (γ = 8.47) is higher. This work demonstrates that PIB has better residual convergence in large gradient surface processing. It is expected to realize ion beam machining with a higher convergence ratio.

Ion beam sputtering is widely utilized in the area of ultra-high precision fabrication, coating, and discovering the microworld. A pulsed ion beam (PIB) can achieve higher material removal resolution while maintaining traditional ion beam removal performance and macro removal efficiency. In this paper, a 0.01 s pulse width beam is used to sputter atom layer deposition (ALD) coated samples. The nano-scale phenomenon is observed by high-resolution TEM. The results show that when the cumulative sputtering time is less than 1.7 s, the sputtering removal of solid by ion beam is accompanied by a nonlinear effect. Furthermore, the shortest time (0.05 s) and lowest thickness (0.35 nm) necessary to remove a uniform layer of material were established. The definition of its nonlinear effect under a very small removal amount guides industrial ultra-high precision machining. It reveals that PIB not only has high removal resolution on nanoscale, but can also realize high volume removal efficiency and large processing diameter at the same time. These features make PIB promising in the manufacturing of high power/energy laser optics, lithography objective lens, MEMS, and other ultra-high precision elements.

The high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry. Traditional focused ion beam (FIB) and reactive ion etching (RIE) methods have limitations in precision and efficiency, hindering their application in automated mass production. The pulsed ion beam (PIB) method addresses these issues by enhancing ion beam deflection to achieve high-resolution material removal on a macro scale, which can reach the equivalent removal resolution of 6.4 × 10⁻⁴ nm. Experiments were conducted on a quartz sample (10 × 10 × 1 mm) with a specific pattern mask using the custom PIB processing device. The surface morphology, etching depth, and roughness were measured post-process. The results demonstrated that precise control over cumulative sputtering time yielded well-defined patterns with expected average etching depths and surface roughness. This confirms the PIB technique’s potential for precise atomic depth image transfer and its suitability for industrial automation, offering a significant advancement in microfabrication technology.