Nanoscale laser damage precursors generated from fabrication have emerged as a new bottleneck that limits the laser damage resistance improvement of fused silica optics. In this paper, ion beam etching (IBE) technology is performed to investigate the evolutions of some nanoscale damage precursors (such as contamination and chemical structural defects) in different ion beam etched depths. Surface material structure analyses and laser damage resistance measurements are conducted. The results reveal that IBE has an evident cleaning effect on surfaces. Impurity contamination beneath the polishing redeposition layer can be mitigated through IBE. Chemical structural defects can be significantly reduced, and surface densification is weakened after IBE without damaging the precision of the fused silica surface. The photothermal absorption on the fused silica surface can be decreased by 41.2%, and the laser-induced damage threshold can be raised by 15.2% after IBE at 250 nm. This work serves as an important reference for characterizing nanoscale damage precursors and using IBE technology to increase the laser damage resistance of fused silica optics.

In the high-power laser system, the mid-spatial frequency error of the surface of the high-power laser component will affect the normal operation of the high-power laser system. In order to improve the mid-spatial frequency error of the high-power laser component after magnetorheological finishing, the causes and influencing factors of the ribbon fluctuation in magnetorheological finishing are studied, and the influence of different ribbon fluctuation on the mid-spatial frequency error of the surface is studied. Firstly, the influence of different ribbon fluctuations on the mid-spatial frequency error of the machined surface is simulated by a computer. Secondly, the magnetic field in the circumferential direction of the polishing wheel, the fluctuation amount and frequency of the magnetorheological polishing ribbon are measured, and then the causes of the fluctuation of the magnetorheological polishing ribbon are analyzed. Moreover, through the principle of a single variable, the influence of process parameters on the fluctuation of magnetorheological polishing ribbon is explored. Finally, the fused silica component is scanned uniformly under the process parameters of magnetorheological polishing ribbon fluctuation of 40 μm, 80 μm, 150 μm, and 200 μm. The experimental results show that the greater the ribbon fluctuation, the greater the surface mid-spatial frequency error of the component, and the ribbon fluctuation is approximately linear with the RMS of the PSD2 in the mid-spatial frequency band on the surface of the component. Therefore, the fluctuation of the ribbon can be controlled by controlling the magnetorheological processing parameters, and the mid-spatial frequency band error on the surface of the high-power laser component can be significantly reduced by optimizing process parameters after magnetorheological finishing.

High-precision optical component manufacturing by ion beam machining tools with ultra-high material removal resolution and dynamically adjustable removal efficiency is important in various industries. In this paper, we propose a low-energy pulsed ion beam (LPIB) technology that can obtain a single pulse with high-resolution material removal by adjusting the pulse frequency and duty cycle, and enable the dynamic adjustment of the removal efficiency. The pulse frequency is 1–100 Hz, and the duty cycle is 0–100%. For monocrystalline silicon, the pulse frequency and duty cycle are set to 100 Hz and 1%, respectively; thus, the single-shot pulse depth removal resolution of material is 6.7 × 10⁻⁴ nm, which means every 21 pulses can remove one silicon atom layer. Compared with IBF, where the removal resolution of the maximum depth is about 0.01 nm, the controllable resolution is one to two orders of magnitude higher. There is a linear relationship between the removal efficiency of the pulsed ion beam removal function and the pulse duty ratio. The material removal of a single pulse can be adjusted in real time by adjusting the pulse duty cycle and frequency. Owing to its high resolution and wide adjustable removal efficiency, LPIB has broad application prospects in the field of sub-nano-precision surface modification, quality tuning of inertial resonant devices, and so on. This technology is expected to advance surface processing and ultra-precision manufacturing.

Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide.

Fused silica has become the preferred optical material in the field of inertial confinement fusion (ICF) due to its excellent performance; however, these costly optical elements are vulnerable, and their manufacture is time-consuming. Therefore, the restoration of laser-induced damage for these optical elements is of great value. To restrain the post-restoration raised rim problem in the CO₂ laser repair process to improve the restoration quality, the separate influences of key parameters of laser power, irradiation duration, and laser beam diameter on post-restoration pit morphology are compared in combined simulation and experimental studies. An optimized, patterned CO2 laser strategy is proposed and verified; the results indicate that, with the strategy, the rim height decreases from 2.6 μm to 1.52 μm, and maximal photo thermal absorption is decreased from 784.2 PPM to 209.43 PPM.