Electrochemical sensors are devices capable of detecting molecules and biomolecules in solutions and determining the concentration through direct electrical measurements. These systems can be miniaturized to a size less than 1 µm through the creation of small-size arrays of nanoelectrodes (NEA), offering advantages in terms of increased sensitivity and compactness. In this work, we present the fabrication of an electrochemical platform based on an array of nanoelectrodes (NEA) and its possible use for the detection of antigens of interest. NEAs were fabricated by forming arrays of nanoholes on a thin film of polycarbonate (PC) deposited on boron-doped diamond (BDD) macroelectrodes by thermal nanoimprint lithography (TNIL), which demonstrated to be a highly reliable and reproducible process. As proof of principle, gliadin protein fragments were physisorbed on the polycarbonate surface of NEAs and detected by immuno-indirect assay using a secondary antibody labelled with horseradish peroxidase (HRP). This method allows a successful detection of gliadin, in the range of concentration of 0.5–10 μg/mL, by cyclic voltammetry taking advantage from the properties of NEAs to strongly suppress the capacitive background signal. We demonstrate that the characteristics of the TNIL technology in the fabrication of high-resolution nanostructures together with their low-cost production, may allow to scale up the production of NEAs-based electrochemical sensing platform to monitor biochemical molecules for both food and biomedical applications.

The recent developments in quantum technologies, as well as advanced detection experiments, have raised the need to detect extremely weak signals in the microwave frequency spectrum. To this aim, the Josephson travelling wave parametric amplifier, a device capable of reaching the quantum noise limit while providing a wide bandwidth, has been proposed as a suitable cryogenic front-end amplifier. This work deals with the numerical study of a Josephson travelling wave parametric amplifier, without approximations regarding the nonlinearity of the key elements. In particular, we focus on the investigation of the system of coupled nonlinear differential equations representing all the cells of the Josephson travelling wave parametric amplifier, with proper input and output signals at the boundaries. The investigation of the output signals generated by the parametric amplification process explores the phase-space and the Fourier spectral analysis of the output voltage, as a function of the parameters describing the pump and signal tones that excite the device. Beside the expected behavior, i.e., the signal amplification, we show that, depending on the system operation, unwanted effects (such as pump tone harmonics, incommensurate frequency generation, and noise rise), which are not accounted for in simple linearized approaches, can be generated in the whole nonlinear system.

The advent of ultra-low noise microwave amplifiers revolutionized several research fields demanding quantum-limited technologies. Exploiting a theoretical bimodal description of a linear phase-preserving amplifier, in this contribution we analyze some of the intrinsic properties of a model architecture (i.e., an rf-SQUID based Josephson Traveling Wave Parametric Amplifier) in terms of amplification and noise generation for key case study input states (Fock and coherent). Furthermore, we present an analysis of the output signals generated by the parametric amplification mechanism when thermal noise fluctuations feed the device.

Ultralow-noise microwave amplification and detection play a central role in different applications, going from fundamental physics experiments to the deployment of quantum technologies. In many applications the necessity of reading multiple detectors, or cavities or qubits, calls for large bandwidth amplifiers with the lowest possible noise. Current technologies are based on High Electron Mobility Transistors and Josephson Parametric Amplifiers. Both have limitations, the former in terms of the minimum noise, the latter in terms of bandwidth. Superconducting Traveling Wave Parametric Amplifiers (TWPAs) have the potential of offering quantum limited noise and large bandwidth. These amplifiers are based on the parametric amplification of microwaves traveling along a transmission line with embedded nonlinear elements. We are developing superconducting TWPAs based both on Josephson junction arrays (Traveling Wave Josephson Parametric Amplifiers) and on nonlinear kinetic inductance (Dispersion Engineered Traveling Wave Kinetic Inductance Amplifiers). Our goal is to achieve large bandwidth (in the 5 to 10 GHz range), large gain (more than 20 dB), large saturation power (more than −50 dBm), and near quantum limited noise (noise temperature less than 600 mK). Current achievements in the design and development of the high performance TWPAs are here reported and discussed, together with current limitations and possible future developments.

Recent years have witnessed a growing interest in detectors capable of detecting single photons in the near-infrared (NIR), mainly due to the emergence of new applications such as light detection and ranging (LiDAR) for, e.g., autonomous driving. A silicon single-photon avalanche diode is surely one of the most interesting and available technologies, although it yields a low efficiency due to the low absorption coefficient of Si in the NIR. Here, we aim at overcoming this limitation through the integration of complementary metal–oxide–semiconductor (CMOS) -compatible nanostructures on silicon photodetectors. Specifically, we utilize silver grating arrays supporting surface plasmons polaritons (SPPs) to superficially confine the incoming NIR photons and therefore to increase the probability of photons generating an electron-hole pair. First, the plasmonic silver array is geometrically designed using time domain simulation software to achieve maximum detector performance at 950 nm. Then, a plasmonic silver array characterized by a pitch of 535 nm, a dot width of 428 nm, and a metal thickness of 110 nm is integrated by means of the focused ion beam technique on the detector. Finally, the integrated detector is electro-optically characterized, demonstrating a QE of 13% at 950 nm, 2.2 times higher than the reference. This result suggests the realization of a silicon device capable of detecting single NIR photons, at a low cost and with compatibility with standard CMOS technology platforms.