In this work, we present the area-selective growth of zinc oxide nanowire (NW) arrays on patterned surfaces of a silicon (Si) substrate for a piezoelectric nanogenerator (PENG). ZnO NW arrays were selectively grown on patterned surfaces of a Si substrate using a devised microelectromechanical system (MEMS)-compatible chemical bath deposition (CBD) method. The fabricated devices measured a maximum peak output voltage of ~7.9 mV when a mass of 91.5 g was repeatedly manually placed on them. Finite element modeling (FEM) of a single NW using COMSOL Multiphysics at an applied axial force of 0.9 nN, which corresponded to the experimental condition, resulted in a voltage potential of −6.5 mV. The process repeated with the same pattern design using a layer of SU-8 polymer on the NWs yielded a much higher maximum peak output voltage of ~21.6 mV and a corresponding peak power density of 0.22 µW/cm³, independent of the size of the NW array. The mean values of the measured output voltage and FEM showed good agreement and a nearly linear dependence on the applied force on a 3 × 3 µm² NW array area in the range of 20 to 90 nN.

The search for a synthesis method to create longer ZnO NWAs with high-quality vertical alignment, and the investigation of their electrical properties, have become increasingly important. In this study, a hydrothermal method for growing vertically aligned arrays of ZnO nanowires (NWs) using localized heating was utilized. To produce longer NWs, the temperature environment of the growth system was optimized with a novel reaction container that provided improved thermal insulation. At a process temperature above ~90 °C, ZnO NWs reached a length of ~26.8 µm within 24 h, corresponding to a growth rate of 1.1 µm/h, nearly double the rate of 0.6 µm/h observed in traditional chemical bath growth using a glass reactor. The densely grown NWs (~1.9/µm²), with a diameter of ~0.65 µm, exhibited a preferred hexagonal c-axis orientation and were vertically aligned to the (100) silicon (Si) substrate. These NW structures have multiple applications, e.g., in piezotronic strain sensors, gas sensing, and piezoelectric energy harvesting. As proof of concept, a piezoelectric nanogenerator (PENG) was fabricated by embedding the NWs in an S1818 polymer matrix over a 15 mm × 15 mm area. Under repeated impulse-type compressive forces of 0.9 N, a maximum peak output voltage of ~95.9 mV was recorded, which is higher by a factor of four to five than the peak output voltage of 21.6 mV previously obtained with NWs measuring ~1.8 µm in length.

In this study we report on the structural, mechanical, and electrical characterization of different structures of vertically aligned zinc oxide (ZnO) nanowires (NWs) synthesized using hydrothermal methods. By optimizing the growth conditions, scanning electron microscopy (SEM) micrographs show that the ZnO NWs could reach an astounding 51.9 ± 0.82 µm in length, 0.7 ± 0.08 µm in diameter, and 3.3 ± 2.1 µm⁻² density of the number of NWs per area within 24 h of growth time, compared with a reported value of ~26.8 µm in length for the same period. The indentation modulus of the as-grown ZnO NWs was determined using contact resonance (CR) measurements using atomic force microscopy (AFM). An indentation modulus of 122.2 ± 2.3 GPa for the NW array sample with an average diameter of ~690 nm was found to be close to the reference bulk ZnO value of 125 GPa. Furthermore, the measurement of the piezoelectric coefficient (d₃₃) using the traceable ESPY33 tool under cyclic compressive stress gave a value of 1.6 ± 0.4 pC/N at 0.02 N with ZnO NWs of 100 ± 10 nm and 2.69 ± 0.05 µm in diameter and length, respectively, which were embedded in an S1818 polymer. Current–voltage (I-V) measurements of the ZnO NWs fabricated on an n-type silicon (Si) substrate utilizing a micromanipulator integrated with a tungsten (W) probe exhibits Ohmic behavior, revealing an important phenomenon which can be attributed to the generated electric field by the tungsten probe, dielectric residue, or conductive material.

Dimensional and contact resonance (CR) images of nanowire (NW) arrays (NWAs) are measured using our newly developed microprobe CR imaging (CRI) setup. Then a reference method is employed to calculate the indentation modulus of NWs (M _i,NW ) representing the elasticity of NWs, by measuring NWAs and reference samples at the same static probing force. Furthermore, topography is imaged in combination with CR and M _i,NW separately by software, in which the z values indicate the topography of the NWs and the color bars show its CR or M _i,NW . Then NWs’ topography relation to M _i,NW is visualized. As typical examples, 3D imaging of topography and measurement of M _i,NW is performed with Si pillar arrays as well as Cu and ZnO NWAs. The novel method enables fast mechanical performance measurements of large-scale vertically-aligned NWAs without releasing them from their respective substrates. For instance, the diameter and pitch of the Si pillars and the diameter of the Cu NWAs are in good agreement with the values measured by scanning electron microscopy (SEM). The position of ZnO NWs bunches grown at arbitrary sites on silicon can be identified with the help of combined topography and indentation modulus images. Furthermore, M _i,NW measured by our homemade CRI setup agrees well with bulk values. Differences between the measured M _i,NW and bulk M _i values may be related to a size effect in NW elasticity.