Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting, and ubiquitous white light sources has developed around the inception of the Nobel-prize-winning blue GaN LEDs. Today, GaN optoelectronics is developing beyond solid-state lighting, leading to new and innovative devices, e.g., for microdisplays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (micro-LEDs and nano-LEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN micro-LEDs with silicon microelectronics in a hybrid approach. GaN LED technology is now even spreading into the realm of display technology, which has been occupied by organic LEDs and liquid crystal displays for decades. In this review, the technological transition toward GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art.

Low-energy technologies in the Internet of Things (IoTs) era are still unable to provide the reliability needed by the industrial world, particularly in terms of the wireless operation that pervasive deployments demand. While the industrial wireless performance has achieved an acceptable degree in communications, it is no easy task to determine an efficient energy-dimensioning of the device in order to meet the application requirements. This is especially true in the face of the uncertainty inherent in energy harvesting. Thus, it is of utmost importance to model and dimension the energy consumption of the IoT applications at the pre-deployment or pre-production stages, especially when considering critical factors, such as reduced cost, life-time, and available energy. This paper presents a comprehensive model for the power consumption of wireless sensor nodes. The model takes a system-level perspective to account for all energy expenditures: communications, acquisition and processing. Furthermore, it is based only on parameters that can empirically be quantified once the platform (i.e., technology) and the application (i.e., operating conditions) are defined. This results in a new framework for studying and analyzing the energy life-cycles in applications, and it is suitable for determining in advance the specific weight of application parameters, as well as for understanding the tolerance margins and tradeoffs in the system.

Dissipated power in metal oxide nanowires $\left(r_{\text{NW}}<45\text{nm}\right)$ often causes important self-heating effects and as a result, undesired aging and failure of the devices. Nevertheless, this effect can be used to optimize the sensing conditions for the detection of various gaseous species, avoiding the requirement of external heaters. In this letter, the sensing capabilities of self-heated individual ${\text{SnO}}_2$ nanowires toward ${\text{NO}}_2$ are presented. These proof-of-concept systems exhibited responses nearly identical to those obtained with integrated microheaters, demonstrating the feasibility of taking advantage of self-heating in nanowires to develop ultralow power consumption integrated devices.

The responses of individual ZnO nanowires to UV light demonstrate that the persistent photoconductivity (PPC) state is directly related to the electron-hole separation near the surface. Our results demonstrate that the electrical transport in these nanomaterials is influenced by the surface in two different ways. On the one hand, the effective mobility and the density of free carriers are determined by recombination mechanisms assisted by the oxidizing molecules in air. This phenomenon can also be blocked by surface passivation. On the other hand, the surface built-in potential separates the photogenerated electron-hole pairs and accumulates holes at the surface. After illumination, the charge separation makes the electron-hole recombination difficult and originates PPC. This effect is quickly reverted after increasing either the probing current (self-heating by Joule dissipation) or the oxygen content in air (favouring the surface recombination mechanisms). The model for PPC in individual nanowires presented here illustrates the intrinsic potential of metal oxide nanowires to develop optoelectronic devices or optochemical sensors with better and new performances.