This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design.

This article presents the design strategy and the implementation of a three-way Doherty power amplifier (DPA3W) to enhance the efficiency at deep power back-off. Theoretical design equations are derived, based on which design charts are drawn to explore the available design space, accounting for practical constraints related to the available technology and selected application. The proposed design strategy is demonstrated by the design, fabrication and experimental characterization of a three-way multistage Doherty amplifier optimized for efficiency peaks at 6 and 12 dB back-off. The amplifier is realized on the WIN Semiconductors 150 nm GaN-SiC high-electron-mobility transistor (HEMT) monolithic process at 28 GHz, targeting 5G applications. The prototype achieves saturated output power in excess of 34 dBm and power added efficiency of the order of 15% from 6 to 12 dB back-off, demonstrating competitive performance and a good agreement between simulations and measurements, thus validating the approach.

This letter presents the design and experimental characterization of a GaN–Si monolithic Doherty power amplifier (PA) for the $Ka$ -band satellite downlink. The fabricated amplifier favorably compares with the current state of the art, achieving from 16.3 to 20.3 GHz (4 GHz, 22% relative bandwidth), a record band to date, 36.6–37.7-dBm output power, 23%–31% power-added efficiency, 18–22-dB gain at saturation, and around 20% power-added efficiency at 6-dB output back-off. At 18.8 GHz, the amplifier shows a noise-to-power ratio higher than 17 dB at all power levels, making it suitable for satellite applications where additional linearization is usually unfeasible.

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of the auxiliary amplifier in back off, due to the device’s parasitic elements. By properly accounting for this effect, the designed output matching network was able to follow the desired impedance trajectories across the 2.8 GHz to 3.6 GHz range (fractional bandwidth = 25%), with a good trade-off between efficiency and bandwidth. The Doherty power amplifier was designed with two 10 W packaged GaN HEMTs. The measurement results showed that it provided 43 dBm to 44.2 dBm saturated output power and 8 dB to 13.5 dB linear power gain over the entire band. The achieved drain efficiency was between 62% and 76.5% at saturation and between 44% and 56% at 6 dB of output power back-off.

Modern mobile communication signals require power amplifiers able to maintain very high efficiency in a wide range of output power levels, which is a major issue for classical power amplifier architectures. Following the load-modulation approach, efficiency enhancement is achieved by dynamically changing the amplifier load impedance as a function of the input power. In this paper, a review of the widely-adopted Doherty power amplifier and of the other load-modulation efficiency enhancement techniques is presented. The main theoretical aspects behind each method are introduced, and the most relevant practical implementations available in recent literature are reported and discussed.

Thermal stress in microwave power devices is a major issue for space applications, with a detrimental impact on the operating life-time of MMICs on board satellites. To limit this, derating rules are applied to the maximum operating junction temperature, which however limit the potential device performance when GaN/Si technology is employed. In this framework, classical power amplifier design paradigm must be reconsidered, moving to a thermal-aware design approach. To this aim, it is crucial to have access to highly reliable thermal models of the adopted devices. This work will show that, adopting a simplified but effective thermal model and proper design strategy, GaN/Si technology can be successfully adopted for space-compliant MMIC design up to Ka-band. In particular, the preliminary design of a 10W MMIC working in Ka-band at 36 GHz will be presented based on the 100nm gate-length GaN/Si HEMT process from OMMIC foundry.