Sebastian Ambrus

Dr. Sebastian Ambrus

orcid

Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
22 May 2021 in Material Design & Processing Communications
Verified
Journal Article
Closed access
PDF file
SASebastian Ambrus
Sebastian Ambrus
RMRoxana Muntean
Roxana Muntean
NKNorbert Kazamer
Norbert Kazamer
CCCosmin Codrean
Cosmin Codrean

8 November 2024 in Crystals
Verified
Journal Article
Open access
PDF file
Mircea NicolaescuMircea Nicolaescu
Mircea Nicolaescu
SASebastian Ambrus
Sebastian Ambrus
PHPetru Hididis
Petru Hididis
MMMina Ionela Morariu
Mina Ionela Morariu
Iosif HULKAIosif HULKA
Iosif HULKA
Cornelia BandasCornelia Bandas
Cornelia Bandas
The nanoporous copper (NPC)-copper oxides (Cu2O/CuO)/reduced graphene oxide (rGO) composite structure was synthesized by combining the dealloying process of Cu48Zr47Al5 amorphous ribbons with a microwave-assisted hydrothermal technique at a temperature of 200 °C. The main advantage of the microwave-assisted hydrothermal process is the oxidation of nanoporous copper together with the in situ reduction of graphene oxide to form rGO. The integration of rGO with NPC improves electrical conductivity and streamlines the process of electron transfer. This composite exhibit considerable potential in electrochemical catalysis application, due to the combined catalytic activity of NPC and the chemical reactivity of rGO. Our study relates the transition to n-type rGO in microwave-assisted hydrothermal reactions, and also the development of an electrode material suitable for electrochemical applications based on the p-p-n junction NPC-Cu2O/CuO/rGO heterostructure. To confirm the formation of the composite structure, structural, morphological, and optical techniques as XRD, SEM/EDX, UV-Vis and Raman spectroscopy were used. The composite’s electrochemical properties were measured by EIS and Mott-Schottky analyses, showing a charge transfer resistance (Rp) of 250 Ω and indicating the type of the semiconductor properties. The calculated carrier densities of 4.2 × 1018 cm−3 confirms n-type semiconductor characteristic for rGO, and 7.22 × 1018 cm−3 for Cu2O/CuO indicating p-type characteristic.

29 September 2023 in Journal of Engineering Sciences and Innovation
Verified
Journal Article
Closed access
DBDragos Buzdugan
Dragos Buzdugan
Cosmin CodreanCosmin Codrean
Cosmin Codrean
SASebastian Ambrus
Sebastian Ambrus
VSViorel Aurel Serban
Viorel Aurel Serban