In the post-Moore era, carbon nanotube field-effect transistors (CNTFETs) are a promising alternative to complementary metal-oxide-semiconductor (CMOS) technology at and below the 5 nm node. Compact models bridge circuit design and device physics, yet the electrostatic discharge (ESD) behavior of CNTFETs remains insufficiently captured. Focusing on the local bottom-gate (LBG) CNTFET structure, which offers enhanced gate control due to its bottom-gate configuration, this paper investigates three dominant ESD-triggering mechanisms—thermionic current, tunneling leakage current, and thermal failure breakdown. Then, a hybrid compact–behavioral ESD model for CNTFETs is established. After theoretical derivation and comparison with test results, the model parameters are optimized through fitting. The simulation results exhibit excellent agreement with CNTFET measurements, particularly capturing the Human Body Model (HBM) pre-charge threshold phenomenon at 72 V and accurately predicting the subsequent voltage collapse behavior. This validates the accuracy and effectiveness of the model, laying a theoretical and experimental foundation for further construction of carbon-based standard-cell and I/O libraries.

As a critical component of computer systems, static random access memory (SRAM) plays a significant role in the fields of high-performance computing, artificial intelligence, and the Internet of Things. However, the conventional silicon-based SRAM is facing problems such as high power consumption, integration limitations, and the need for performance improvement. For the power consumption challenge of SRAM, a novel read/write-decoupled SRAM cell is proposed in this paper. When SRAM is in a standby state, utilization of this cell can effectively reduce the leakage current, thereby reducing the static power consumption. In addition, a novel carbon–silicon heterogeneous-integrated SRAM technology is proposed in this paper. The carbon–silicon heterogeneous-integrated SRAM technology combines the high mobility, low power consumption, and low temperature process compatibility of carbon nanotubes (CNTs) with mature silicon-based fabrication processes, enabling significant optimization of access time and power consumption. The SRAM was implemented by a silicon-based 55 nm process and a carbon-based 500 nm process. The simulation results showed that when the power supply was 1.2 V, the access time of SRAM with the silicon 55 nm process was 886 ps. The static and dynamic power consumption was 91.51 nW and 1.48 mW, respectively. The SRAM with carbon–silicon heterogeneous-integrated technology achieved an access time of 872 ps, a static power consumption of 62.54 nW, and a dynamic power consumption of 1.07 mW, representing reductions of 1.58%, 31.66%, and 27.70%, respectively.

An Analog-to-Digital Converter (ADC) is an indispensable part of image sensor systems. This paper presents a silicon-based 13-bit 100 kS/s two-step single-slope analog-to-digital converter (TS-SS ADC) for infrared image sensors with a frame rate of 100 Hz. For the charge leakage and offset voltage issues inherent in conventional TS-SS ADC, a four-terminal comparator was employed to resolve the fine ramp voltage offset caused by charge redistribution in storage and parasitic capacitors. In addition, a current-steering digital-to-analog converter (DAC) was adopted to calibrate the voltage reference of the dynamic comparator and mitigate differential nonlinearity (DNL)/integral nonlinearity (INL). To eliminate quantization dead zones, a 1-bit redundancy was incorporated into the fine quantization circuit. Finally, the quantization scheme consisted of 7-bit coarse quantization followed by 7-bit fine quantization. The ADC was implemented using an SMIC 55 nm processSemiconductor Manufacturing International Corporation, Shanghai, China. The post-simulation results show that when the power supply is 3.3 V, the ADC achieves a quantization range of 1.3 V–3 V. Operating at a 100 kS/s sampling rate, the proposed ADC exhibits an effective number of bits (ENOBs) of 11.86, a spurious-free dynamic range (SFDR) of 97.45 dB, and a signal-to-noise-and-distortion ratio (SNDR) of 73.13 dB. The power consumption of the ADC was 22.18 mW.