This paper focuses on the modeling of low-voltage automotive power electronic circuits to obtain accurate system simulation, including estimation of losses. The aim is to compare several metal-oxide semiconductor field-effect transistor (MOSFET) models to find out which can be used for low-voltage, high-current automotive converter simulations. As these models are intended for system simulation, only analytical models are addressed as they may be implemented into any circuit simulator. The different modes of operation of the switches are described (commutation, synchronous rectification, avalanche...), and several models of the power MOSFET transistor, allowing for simulation in these modes, are presented. Special care is given to the parameter extraction methods and to the interconnection model of the commutation cell. The four test circuits used to identify the low-voltage power MOSFET model parameters are presented. Comparison between simulations and measurements obtained with a calorimeter are then detailed. This measurement method is accurate and offers a simple way to prove the quality of simulation results. It is shown that the parameter identification is of major concern to achieve high accuracy, as classical Spice models can give good results, providing the model parameters are correctly set

Recently, the use of DC microgrid distribution system has become more attractive than traditional AC systems due to their energy efficiency and ability to easily integrate with renewable energy sources and batteries. This paper proposes a 500 V DC microgrid which consists of a 20 kWp photovoltaic panel, batteries, and DC loads. A hierarchical control strategy to ensure balance power of the DC microgrid and the maintenance of common DC bus voltage is presented. The capability of exchanging power energy of the microgrid with the power system of neighborhood buildings is also considered. Typical operation modes are simulated in the Matlab/simulink environment to confirm the good performance of the controllers and the efficiency of appropriately controlling the charge–discharge of the battery system. This research is expected to bring benefits to the design and operation of the system, such as reducing the capacity of batteries, increasing the self-supply of buildings, and decreasing the electricity demand from the AC grid.

To expedite testing, time-dependent dielectric breakdown (TDDB) analyses are conducted on commercial 4H-SiC mosfet s at high gate-to-source voltages ( $\bm {V_{GS}}$ ), under Fowler–Nordheim conduction only. However, as inferred, such conditions induce impact ionization-generated holes in the dielectric layer (SiO $\bm {_{2}}$ ), resulting in a state transition in the effective dipolar moment. This accelerates the SiO $\bm {_{2}}$ degradation leading to an overestimation of its intrinsic lifetime at typical $V_{GS}$ values for gate driving in power converters. To address this, a physics-based approach is proposed to design TDDB tests under such conditions and to correct the intrinsic lifetime prediction at nominal $\bm {V_{GS}}$ values, shortening the testing time by up to two orders of magnitude. Thus, the proposed method is a well-suited candidate to be considered in SiC power device qualification standards, still under development.

Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm² diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.