Bifacial photovoltaics (BPVs) are emerging with large momentum as promising solutions to improve energy yield and cost of PV systems. To reach its full potential, an accurate understanding of the physical characteristics of BPV technology is required. For this reason, we collected experimental data to refine a physical model of BPV. In particular, we simultaneously measured the module temperature, short circuit current (I_sc), open-circuit voltage (V_oc), power at the maximum power point (P_mpp), and the energy yield of a bifacial and a monofacial minimodule. Such minimodules, realised with the same geometry, cell technology, and module lamination, were tested under the same clear sky outdoor conditions, from morning to afternoon, for three days. The bifacial system experimentally shows higher module temperatures under operation, about 10 °C on a daily average of about 40 °C. Nevertheless, its energy yield is about 15% larger than the monofacial one. We propose a physical quantitative model that fits the experimental data of module temperature, I_sc, V_oc, P_mpp, and energy yield. The model was then applied to predict the annual energy yield of PV module strings. The effect of different PV module temperature coefficients on the energy yield is also discussed.

A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide

This work investigates the additional gate current component with respect to the direct tunneling of electrons between the conduction bands measured in ultrathin oxide metal–oxide–semiconductor field-effect transistors at low voltages, before and after the application of a high field stress. We discuss several possible conduction mechanisms on the basis of the band diagram profiles obtained by means of a one-dimensional self-consistent Poisson–Schrodinger solver and we explain why this additional leakage current is mainly due to electron tunneling involving the native and stress-induced interface states in the silicon band gap either at the cathode or at the anode.

In this paper, we report on the performances of silicon photomultipliers (SiPMs) with commercial long-pass interferential and plastic filters integrated on the detector's package for environmental light rejection. Several applications, including functional near infrared (NIR) spectroscopy or light detection and ranging, would benefit from the use of highly sensitive detectors like SiPMs with optimized electro-optical characteristics in NIR wavelength range. To this purpose, it is fundamental to reduce the absorption of environmental spurious light leading in application to a decrease of the detector's sensitivity, especially for very weak photon fluxes. We will show how the use of both types of filters has a relevant impact on the electro-optical performances of the bare detectors, in terms of cross talk reduction at high overvoltage values, detection efficiency, spectral response and capability to shield effectively the devices from the absorption of stray light, at the different light wavelengths used for the measurements.