This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (⁶⁰Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO₂/Al₂O₃ stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O₂ and N₂ annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O₂ annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.

The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO₂ are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

An investigation of the effect of gamma radiation was carried out on the setting time of alkali-activated binder paste. Mechanically activated coal fly ash (FA), ground granulated blast furnace slag (BFS), and their 1:1 mass mixture (MIX) were activated by water glass with a module of 1.5. Fresh paste was cast into molds and exposed to Co-60 gamma radiation, at a dose rate of 9.62–9.53 Gy/h, until the final setting. The initial and final setting times were determined by measuring the penetration of the Vicat needle at regular intervals. The initial setting times were 1 h 3 min for BFS, 1 h 55 min for MIX, and 3 h 28 min for FA. The final setting times were 1 h 10 min for BFS, 2 h 13 min for MIX, and 4 h 1 min for FA. The received doses were 8.02 Gy for BFS, 17.54 Gy for MIX, and 34.14 Gy for FA. Exposure to gamma radiation resulted in a shorter initial setting time for BFS, a shorter final setting time for FA, and results with an insufficiently visible impact on MIX. For dose rates in the 9–10 Gy/h range, the irradiation by Co-60 gamma rays during setting did not lead to flash, nor did it delay the setting of alkali-activated binder pastes.