Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology. We also present a SiC technology and product roadmap.

The fabrication processes for silicon nitride photonic integrated circuits evolved from microelectronics components technology—basic processes have common roots and can be executed using the same type of equipment. In comparison to that of electronics components, passive photonic structures require fewer manufacturing steps and fabricated elements have larger critical dimensions. In this work, we present and discuss our first results on design and development of fundamental building blocks for silicon nitride integrated photonic platform. The scope of the work covers the full design and manufacturing chain, from numerical simulations of optical elements, design, and fabrication of the test structures to optical characterization and analysis the results. In particular, technological processes were developed and evaluated for fabrication of the waveguides (WGs), multimode interferometers (MMIs), and arrayed waveguide gratings (AWGs), which confirmed the potential of the technology and correctness of the proposed approach.

In the paper findings concerning laboratory-structures of Schottky diodes made of silicon carbide are presented. Special attention is paid to influence of the mounting process of diode structures in packages worked out in Warsaw University of Technology and influence of ambient temperature and self-heating phenomena on dc characteristics of the examined diodes. It is shown that high-temperature technological operations can influence the course of characteristics of these diodes, and that self-heating phenomena can visibly change the shape of characteristics of the considered devices. Thermal parameters of these diodes are also measured. The performed measurements prove that constructions of the packages worked out by the authors allow the considered diodes to operate at internal temperatures exceeding even 350°C.

In this paper assembly techniques of monocrystalline GaN structures to DBC: sintering and hybrid: sintering + SLID are compared. As an comparison technique shear strength measurements was applied. Study was made on as-received samples, as well as structures aged in temperature above 300 °C for 500 h. Additionally metallographic cross-section of the joints were made and inspected by means of SEM and energy dispersive x-ray spectroscopy. Sintered joints are very porous and does not meet demands for assembly after long term ageing. Hybrid: sintering + SLID joints manufactured at 280 °C are far less porous and fulfil adhesion joint requirements for monocrystalline GaN assembly with excess.

This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. The idea of measurements of mutual transient thermal impedances of the investigated device is described. The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

This work presents the results of manufacturing of connections based on Au-Ag metallization scheme. This type of connection is made without application of flux, thus no flux cleaning step is required. Such Au - Ag metallization scheme was chosen to simulate similar conditions as in assembly of SiC or GaN devices. Experiment was made to test various conditions of process and pick most satisfying values of time and temperature. Mechanical properties of joints were tested. The highest shear strength was achieved for GaN assembled to DBC substrate with 1 μm Sn layer by Ag sintering at 280 °C and 30 min. Additionally high current tests were performed on Cu ribbon (Ag plated) connections. No degradation was observed for current as high as 80 A/mm ² .