A new thermal model based on a distributed and fast modeling approach for the modeling of gallium nitride (GaN) power devices is presented in this paper. The model is based on the application of Green's function theory to obtain an analytical solution of the heat conduction equation. The model comprises an accurate, spatially distributed, and fast algorithm that calculates a 2-D thermal response at the 2-D electron gas level of GaN power devices in the steady-state and the transient regime. In comparison with finite element method finite-element model simulations, the model achieves a significant reduction of the computational time while retaining very good accuracy. The model shows strong capabilities for thermal analysis with respect to parameters that have a significant impact on the thermal behavior. Moreover, the nonlinear effect associated with the temperature-dependent thermal conductivity is encompassed together with the impact of package and ambience. As a validation study, the thermal behavior of packaged GaN devices is experimentally characterized by means of infrared thermography. An excellent agreement between the model results and experiments is observed.

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

The present work deals with the development of Co₃O₄-based catalysts for potential application in catalytic gas sensors for methane (CH₄) detection. Among the transition-metal oxide catalysts, Co₃O₄ exhibits the highest activity in catalytic combustion. Doping Co₃O₄ with another metal can further improve its catalytic performance. Despite their promising properties, Co₃O₄ materials have rarely been tested for use in catalytic gas sensors. In our study, the influence of catalyst morphology and Ni doping on the catalytic activity and thermal stability of Co₃O₄-based catalysts was analyzed by differential calorimetry by measuring the thermal response to 1% CH₄. The morphology of two Co₃O₄ catalysts and two Ni_xCo_3−xO₄ with a Ni:Co molar ratio of 1:2 and 1:5 was studied using scanning transmission electron microscopy and energy dispersive X-ray analysis. The catalysts were synthesized by (co)precipitation with KOH solution. The investigations showed that Ni doping can improve the catalytic activity of Co₃O₄ catalysts. The thermal response of Ni-doped catalysts was increased by more than 20% at 400 °C and 450 °C compared to one of the studied Co₃O₄ oxides. However, the thermal response of the other Co₃O₄ was even higher than that of Ni_xCo_3−xO₄ catalysts (8% at 400 °C). Furthermore, the modification of Co₃O₄ with Ni simultaneously brings stability problems at higher operating temperatures (≥400 °C) due to the observed inhomogeneous Ni distribution in the structure of Ni_xCo_3−xO₄. In particular, the Ni_xCo_3−xO₄ with high Ni content (Ni:Co ratio 1:2) showed apparent NiO separation and thus a strong decrease in thermal response of 8% after 24 h of heat treatment at 400 °C. The reaction of the Co₃O₄ catalysts remained quite stable. Therefore, controlling the structure and morphology of Co₃O₄ achieved more promising results, demonstrating its applicability as a catalyst for gas sensing.

Through silicon via (TSV) is the most promising technology for vertical system integration and novel 3-D chip architectures. Reliability and quality assessment necessary for process development, root-cause analysis, and manufacturing require appropriate nondestructive testing techniques to achieve high processing yield and reliability. This paper presents two advanced approaches for nondestructive localization of defects in TSVs. The first method investigated here was lock-in thermal imaging by thermography and photoemission microscopy to inspect and localize electrical shorts within the 3-D geometry of the TSV insulation liner. In addition, filling defects in the TSVs have been inspected using acoustic microscopy in the gigahertz frequency band in time and spectral domains.

The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.

High activity of a catalyst and its thermal stability over a lifetime are essential for catalytic applications, including catalytic gas sensors. Highly porous materials are attractive to support metal catalysts because they can carry a large quantity of well-dispersed metal nanoparticles, which are well-accessible for reactants. The present work investigates the long-term stability of mesoporous Co₃O₄-supported Au–Pd catalyst (Au–Pd@meso-Co₃O₄), with a metal loading of 7.5 wt% and catalytically active mesoporous Co₃O₄ (meso-Co₃O₄) for use in catalytic gas sensors. Both catalysts were characterized concerning their sensor response towards different concentrations of methane and propane (0.05–1%) at operating temperatures ranging from 200 °C to 400 °C for a duration of 400 h. The initially high sensor response of Au–Pd@meso-Co₃O₄ to methane and propane decreased significantly after a long-term operation, while the sensor response of meso-Co₃O₄ without metallic catalyst was less affected. Electron microscopy studies revealed that the hollow mesoporous structure of the Co₃O₄ support is lost in the presence of Au–Pd particles. Additionally, Ostwald ripening of Au–Pd nanoparticles was observed. The morphology of pure meso-Co₃O₄ was less altered. The low thermodynamical stability of mesoporous structure and low phase transformation temperature of Co₃O₄, as well as high metal loading, are parameters influencing the accelerated sintering and deactivation of Au–Pd@meso-Co₃O₄ catalyst. Despite its high catalytic activity, Au–Pd@meso-Co₃O₄ is not long-term stable at increased operating temperatures and is thus not well-suited for gas sensors.