Linearity testing of analog-to-digital converters (ADCs) is very challenging and expensive due to the stringent linearity requirement on the stimulus and the extremely long test time. This paper introduces a novel method for ADC static linearity testing, allowing the stimulus linearity requirement to be significantly relaxed and the test time to be significantly reduced compared to the state-of-art histogram method. Two nonlinear but functionally related input signals are used as the ADC's excitation and a stimulus error removal technique is used to recover test accuracy. With a segmented non-parametric integral nonlinearity model, this method requires much fewer parameters to accurately represent the nonlinearity. The proposed algorithm has been extensively verified and correlated in simulations. This method not only enables low-cost production testing but can also be used for low-cost on-chip built-in self-test. This method is limited to ADCs with segmented architecture such as SAR ADCs, pipeline ADCs, and cyclic ADCs.

Extensive use of electronic components in mission critical applications has brought reliability concerns in VLSI to the forefront. Ageing related reliability effects such as Time Dependent Dielectric Breakdown (TDDB) might lead to in-field chip failures, thereby degrading the functional safety of the modules. Thus, on-chip monitoring and fast characterization of these ageing phenomenon are gaining prominence. MOSFET Gate leakage current monitoring provides a means to characterize and monitor Time Dependent Dielectric Breakdown (TDDB). The paper presents a fast, large dynamic range, monolithic gate current monitor with a digital output. The circuit does not require an explicit ADC, provides a dynamic range from 200pA to 1lA and requires 1-2 clock cycles of measurement time for most of the device lifetime. Working of the circuit has been demonstrated using Cadence Spectre/AMS simulations.

This paper introduces a systematic approach to the design of Direct Current-to-Digital Converter (DIDC) specifically engineered to overcome the limitations of traditional current measurement methodologies in System-on-Chip (SoC) designs. The proposed DIDC addresses critical challenges such as high power consumption, large area requirements, and the need for intermediate analog signals. By incorporating a current mirror in a cascode topology and managing the current across multiple binary-sized branches with the Successive Approximation Register (SAR) logic, the design achieves precise current measurement. A simple comparator, coupled with an isolation circuit, ensures accurate and reliable sensing. Fabricated using the TSMC 180 nm process, the DIDC achieves 8-bit precision without the need for nonlinearity calibration, showcasing remarkable energy efficiency with an energy per conversion of 1.52 pJ, power consumption of 117 µW, and a compact area of 0.016 mm². This innovative approach not only reduces power consumption and area, but also provides a scalable and efficient solution for next-generation semiconductor technologies. The ability to conduct online measurements during both standard operations and in-field conditions significantly enhances the performance and reliability of SoCs, making this DIDC a promising advancement in the field.

This article presents a systematic approach to generate layouts for two devices, with an arbitrary integer ratio of device sizes, that cancels up to at least third-order gradient effects. A new analysis leads to mathematical constraints on 1-D layouts that meet the required integer ratio and cancel second-order gradients. From those layouts, we apply reflection and rotation symmetries to generate 2-D layouts that cancel higher-order gradients. We demonstrate our proposed methodology on current sense transistors interspersed in active power transistors. Legato electrothermal simulation show our proposed approach, respectively, improves worst-case matching accuracy about a factor of 9.9 and 7.15 when compared to a common centroid (CC) and interdigitated (ID) pattern in the presence of gradients effects. Furthermore, we discuss evaluation metrics that can be used to select one of multiple gradient canceling layouts for any fixed rectangular grid and device application.

This paper introduces a systematic approach to the design of Direct Current-to-Digital Converter (DCDC) specifically engineered to overcome the limitations of traditional current measurement methodologies in System-on-Chip (SoC) designs. The proposed DCDC addresses critical challenges such as high power consumption, large area requirements, and the need for intermediate analog signals. By incorporating a current mirror in a cascode topology and managing the current across multiple binary-sized branches with the Successive Approximation Register (SAR) logic, the design achieves precise current measurement. A simple comparator, coupled with an isolation circuit, ensures accurate and reliable sensing. Fabricated using the TSMC 180 nm process, the DCDC achieves 8-bit precision without the need for nonlinearity calibration, showcasing remarkable energy efficiency with an energy per conversion of 1.52 pJ, power consumption of 117 µW, and a compact area of 0.016 mm². This innovative approach not only reduces power consumption and area, but also provides a scalable and efficient solution for next-generation semiconductor technologies. The ability to conduct online measurements during both standard operations and in-field conditions significantly enhances the performance and reliability of SoCs, making this DCDC a promising advancement in the field.